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BC846B/DG/B3,215

Description
TRANS GEN PURPOSE TO-236AB
Categorysemiconductor    Discrete semiconductor   
File Size850KB,15 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
Environmental Compliance
Download Datasheet Parametric View All

BC846B/DG/B3,215 Overview

TRANS GEN PURPOSE TO-236AB

BC846B/DG/B3,215 Parametric

Parameter NameAttribute value
Transistor typeNPN
Current - Collector (Ic) (Maximum)100mA
Voltage - collector-emitter breakdown (maximum)65V
Vce saturation value (maximum value) when different Ib,Ic400mV @ 5mA,100mA
Current - collector cutoff (maximum)15nA(ICBO)
DC current gain (hFE) at different Ic, Vce (minimum value)200 @ 2mA,5V
Power - Max250mW
Frequency - Transition100MHz
Operating temperature150°C(TJ)
Installation typesurface mount
Package/casingTO-236-3,SC-59,SOT-23-3
Supplier device packagingTO-236AB
BC846 series
65 V, 100 mA NPN general-purpose transistors
Rev. 9 — 25 September 2012
Product data sheet
1. Product profile
1.1 General description
NPN general-purpose transistors in Surface-Mounted Device (SMD) plastic packages.
Table 1.
Product overview
Package
Nexperia
BC846
BC846W
BC846T
[1]
Type number
[1]
PNP complement
JEITA
-
SC-70
SC-75
JEDEC
TO-236AB
-
-
BC856
BC856W
BC856T
SOT23
SOT323
SOT416
Valid for all available selection groups.
1.2 Features and benefits
General-purpose transistors
SMD plastic packages
Two different gain selections
1.3 Applications
General-purpose switching and amplification
1.4 Quick reference data
Table 2.
Symbol
V
CEO
I
C
h
FE
Quick reference data
Parameter
collector-emitter voltage
collector current
DC current gain
h
FE
group A
h
FE
group B
V
CE
= 5 V; I
C
= 2 mA
Conditions
open base
Min
-
-
110
110
200
Typ
-
-
-
180
290
Max
65
100
450
220
450
Unit
V
mA
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