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BC847C/DG/B3,215

Description
TRANS GEN PURPOSE TO-236AB
Categorysemiconductor    Discrete semiconductor   
File Size224KB,16 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
Environmental Compliance
Download Datasheet Parametric View All

BC847C/DG/B3,215 Overview

TRANS GEN PURPOSE TO-236AB

BC847C/DG/B3,215 Parametric

Parameter NameAttribute value
Transistor typeNPN
Current - Collector (Ic) (Maximum)100mA
Voltage - collector-emitter breakdown (maximum)45V
Vce saturation value (maximum value) when different Ib,Ic400mV @ 5mA,100mA
Current - collector cutoff (maximum)15nA(ICBO)
DC current gain (hFE) at different Ic, Vce (minimum value)420 @ 2mA,5V
Power - Max250mW
Frequency - Transition100MHz
Operating temperature150°C(TJ)
Installation typesurface mount
Package/casingTO-236-3,SC-59,SOT-23-3
Supplier device packagingTO-236AB
BC847 series
Rev. 10 — 2 March 2017
45 V, 100 mA NPN general-purpose transistors
Product data sheet
1
Product profile
1.1 General description
NPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device
(SMD) plastic package.
Table 1. Product overview
Type number
BC847
BC847A
BC847B
BC847C
BC847W
BC847AW
BC847BW
BC847CW
BC847AM
BC847BM
BC847CM
[1] Valid for all available selection groups.
[1]
Package
Nexperia
SOT23
JEITA
-
JEDEC
TO-236AB
NPN complement
BC857
BC857A
BC857B
BC857C
SOT323
SC-70
-
BC857W
BC857AW
BC857BW
BC857CW
SOT883
SC-101
-
BC857AM
BC857BM
BC857CM
1.2 Features and benefits
General-purpose transistors
SMD plastic packages
Three different gain selections
AEC-Q101 qualified
1.3 Applications
General-purpose switching and amplification
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