STSJ60NH3LL
N-channel 30V - 0.004Ω - 15A - PowerSO-8™
STripFET™ Power MOSFET for DC-DC conversion
Features
Type
STSJ60NH3LL
■
■
■
■
V
DSS
30V
R
DS(on)
<0.0057Ω
I
D
15A
(2)
Optimal R
DS(on)
x Qg trade-off @ 4.5 V
Conduction losses reduced
Improved junction-case thermal resistance
Low threshold device
PowerSO-8™
Description
This device utilizes the latest advanced design
rules of ST’s proprietary STripFET™ technology.
This process coupled to unique metallization
techniques realizes the most advanced low
voltage Power MOSFET in SO-8 ever produced.
The exposed slug reduces the Rthj-c improving
the current capability.
Internal schematic diagram
Application
■
Switching application
Order code
O
so
b
te
le
r
P
uc
od
s)
t(
bs
-O
et
l
o
P
e
od
r
s)
t(
uc
DRAIN CONTACT ALSO ON THE BACKSIDE
Part number
Marking
60H3LL-
Package
PowerSO-8™
Packaging
Tape & reel
STSJ60NH3LL
May 2007
Rev 2
1/12
www.st.com
12
Contents
STSJ60NH3LL
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
4
5
Test circuit
................................................ 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
O
so
b
te
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r
P
uc
od
s)
t(
bs
-O
et
l
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P
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s)
t(
uc
2/12
STSJ60NH3LL
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
V
DS
V
GS
I
D (1)
I
D
I
D(2)
I
D
I
DM (3)
P
tot (1)
P
tot (2)
T
stg
Tj
Absolute maximum ratings
Parameter
Drain-source voltage (V
GS
= 0)
Gate- source voltage
Drain current (continuous) at T
C
= 25°C
Drain current (continuous) at T
C
= 100°C
Drain current (continuous) at T
C
= 25°C
Drain current (continuous) at T
C
= 100°C
Drain current (pulsed)
Total dissipation at T
C
= 25°C
Total dissipation at T
C
= 25°C
Storage temperature
Operating junction temperature
Value
30
± 16
60
37.5
15
9.4
60
50
3
Unit
V
V
A
A
A
A
A
W
W
1. This value is rated according to Rthj-c
2. This value is rated according to Rthj-pcb
3. Pulse width limited by safe operating area
Table 2.
Symbol
Rthj-case
Rthj-pcb
Thermal resistance
Parameter
Thermal resistance junction-case (drain) Max
Thermal resistance junction-pcb Max
O
so
b
te
le
r
P
uc
od
s)
t(
bs
-O
et
l
o
P
e
od
r
-55 to 150
s)
t(
uc
°C
Value
2.5
42
Unit
°C/W
°C/W
3/12
Electrical characteristics
STSJ60NH3LL
2
Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 3.
Symbol
V
(BR)DSS
I
DSS
On/off states
Parameter
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
GS
= 0)
Gate-body leakage
current (V
DS
= 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
I
D
= 250 µA, V
GS
= 0
V
DS
= Max rating
V
DS
= Max rating @125°C
V
GS
= ± 16V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 7.5A
V
GS
= 4.5V, I
D
= 7.5A
1
0.004
0.005
Min.
30
1
10
±100
Typ.
Max.
Unit
V
µA
µA
nA
V
I
GSS
V
GS(th)
R
DS(on)
Table 4.
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
G
Dynamic
Parameter
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Test conditions
V
DS
=25V, f=1MHz, V
GS
= 0
Gate input resistance
O
so
b
te
le
r
P
uc
od
s)
t(
bs
-O
V
DD
=15V, I
D
=15A
V
GS
=4.5V
(see Figure 13)
et
l
o
P
e
Min.
od
r
ct
u
24
0.0057
0.0075
s)
(
Ω
Ω
Typ.
Max.
Unit
pF
pF
pF
nC
nC
nC
Ω
1810
565
41
18
4.8
5.3
f=1 MHz Gate DC Bias = 0
Test signal level = 20mV
open drain
0.5
1.5
3
4/12
STSJ60NH3LL
Electrical characteristics
Table 5.
Symbol
t
d(on)
t
r
t
d(off)
t
f
Switching times
Parameter
Turn-on delay time
Rise Time
Turn-off delay time
Fall time
Test conditions
V
DD
= 15V, I
D
= 7.5A
,
R
G
= 4.7Ω V
GS
= 10V
(see Figure 12)
V
DD
= 15V, I
D
= 7.5A
R
G
= 4.7Ω
,
V
GS
= 10V
(see Figure 12)
Min.
Typ.
8
65
38
20
Max. Unit
ns
ns
ns
ns
Table 6.
Symbol
I
SD
I
SDM
V
SD (1)
t
rr
Q
rr
I
RRM
Source drain diode
Parameter
Source-drain current
Source-drain current (pulsed)
Forward On Voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 15A, V
GS
= 0
I
SD
= 15A, di/dt = 100A/µs
V
DD
= 15V, T
j
= 25°C
(see Figure 17)
22
32
1.9
Test conditions
Min
Typ.
Max
15
60
1.3
Unit
A
A
V
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
O
so
b
te
le
r
P
uc
od
s)
t(
bs
-O
et
l
o
P
e
od
r
ct
u
s)
(
ns
nC
A
5/12
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