DATA SHEET
µ
PD431000A-X
1M-BIT CMOS STATIC RAM
128K-WORD BY 8-BIT
EXTENDED TEMPERATURE OPERATION
MOS INTEGRATED CIRCUIT
Description
The
µ
PD431000A-X is a high speed, low power, and 1,048,576 bits (131,072 words by 8 bits) CMOS static RAM.
The
µ
PD431000A-X has two chip enable pins (/CE1, CE2) to extend the capacity. And battery backup is available.
In addition to this, A and B versions are low voltage operations.
The
µ
PD431000A-X is packed in 32-pin PLASTIC SOP, 32-pin PLASTIC TSOP (I) (8
×
13.4 mm) and (8
×
20 mm).
Features
•
131,072 words by 8 bits organization
•
Fast access time: 70, 85, 100, 120, 150 ns (MAX.)
•
Low voltage operation (A version: V
CC
= 3.0 to 5.5 V, B version: V
CC
= 2.7 to 5.5 V)
•
Operating ambient temperature: T
A
= –25 to +85
°C
•
Low V
CC
data retention: 2.0 V (MIN.)
•
Output Enable input for easy application
•
Two Chip Enable inputs: /CE1, CE2
Part number
Access time
ns (MAX.)
Operating supply Operating ambient
voltage
V
temperature
°C
–25 to +85
At operating
mA (MAX.)
70
35
30
Note3
Note4
Supply current
At standby
At data retention
µ
A (MAX.)
50
26
22
Note5
Note6
µ
A (MAX.)
Note1
2.5
µ
PD431000A-xxX
µ
PD431000A-AxxX
µ
PD431000A-BxxX
70
70
Note2
70, 85
Note2
4.5 to 5.5
3.0 to 5.5
2.7 to 5.5
, 100
, 100, 120, 150
Notes 1.
T
A
≤
40
°C
2.
V
CC
= 4.5 to 5.5 V
3.
70 mA (V
CC
> 3.6 V)
4.
70 mA (V
CC
> 3.3 V)
5.
50
µ
A (V
CC
> 3.6 V)
6.
50
µ
A (V
CC
> 3.3 V)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. M10430EJ9V0DS00 (9th edition)
Date Published April 2002 NS CP (K)
Printed in Japan
The mark
5
shows major revised points.
©
1995
TI Technology Forum
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