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5KP190A

Description
5000 W, UNIDIRECTIONAL, SILICON, TVS DIODE
CategoryDiscrete semiconductor    diode   
File Size79KB,4 Pages
ManufacturerFORMOSA
Websitehttp://www.formosams.com/
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5KP190A Overview

5000 W, UNIDIRECTIONAL, SILICON, TVS DIODE

5KP190A Parametric

Parameter NameAttribute value
MakerFORMOSA
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresEXCELLENT CLAMPING CAPABILITY
Maximum breakdown voltage232 V
Minimum breakdown voltage211 V
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak reverse power dissipation5000 W
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
polarityUNIDIRECTIONAL
Maximum power dissipation8 W
Maximum repetitive peak reverse voltage190 V
surface mountNO
technologyAVALANCHE
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
DATA SHEET
5KP
SERIES
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR
VOLTAGE
FEATURES
1.0(25.4)MIN.
5.0 to 220 Volts
PEAK PULSE POWER
5000 Watts
P-600
Unit: inch(mm)
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O
• 5000W Peak Pulse Power capability at on 10/1000µs waveform
• Excellent clamping capability
• Low zener impedance
• Repetition rate(Duty Cycle):.05%
• Fast response time: typically less than 1.0 ps from 0 volts to BV min
.052(1.3)
.048(1.2)
.360(9.1)
• Typical IR less than 1µA above 10V
.340(8.6)
1.0(25.4)MIN.
MECHANICALDATA
Case: JEDEC P-600 molded plastic
Terminals: Axial leads, solderable per MIL-STD-750, Method 2026
Polarity: Color band denoted cathode except Bipolar
Mounting Position: Any
Weight: 0.07 ounce, 2.1 gram
.360(9.1)
.340(8.6)
DEVICES FOR BIPOLAR APPLICATIONS
For Bidirectional use C or CA Suffix for types 5KP5.0 thru types 5KP220
Electrical characteristics apply in both directions.
MAXIMUM RATINGS AND CHARACTERISTICS
Rating at 25°Cambient temperature unless otherwise specified. Resistive or inductive load, 60Hz.
For Capacitive load derate current by 20%.
Rati ng
Peak Power D i ssi pati on at T
A
=25
O
C , T P=1ms(Note 1)
Steady State Power di ssi pati on at
T
L
= 7 5
O
C
Lead Lengths .375", (95mm) (Note 2)
Peak Forward Surge C urrent, 8.3ms Si ngle Half Si ne-Wave
Superi mposed on Rated Load (JEC ED Method) (Note 3)
Operati ng Juncti on and Storage Temperature Range
Symbol
P
PK
P
D
I
FSM
T
J
,T
STG
Value
5000
8.0
400
-55 to +175
Uni ts
Watts
Watts
Amps
O
C
NOTES:
1.Non-repetitive current pulse, per Fig. 3 and derated above T
A
=25°Cper Fig. 2.
2.Mounted on Copper Leaf area of 0.79in
2
(20mm
2
).
3.8.3ms single half sine-wave, duty cycle= 4 pulses per minutes maximum.
STAD-NOV.11.2003
PAGE . 1

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