MCP1406/07
6A High-Speed Power MOSFET Drivers
Features
• High Peak Output Current: 6.0A (typical)
• Low Shoot-Through/Cross-Conduction Current in
Output Stage
• Wide Input Supply Voltage Operating Range:
- 4.5V to 18V
• High Capacitive Load Drive Capability:
- 2500 pF in 20 ns
- 6800 pF in 40 ns
• Short Delay Times: 40 ns (typical)
• Matched Rise/Fall Times
• Low Supply Current:
- With Logic ‘1’ Input – 130 µA (typical)
- With Logic ‘0’ Input – 35 µA (typical)
• Latch-Up Protected: Will Withstand 1.5A Reverse
Current
• Logic Input Will Withstand Negative Swing up to 5V
• Pin compatible with the TC4420/TC4429 devices
• Space-saving 8-Pin SOIC, PDIP and
8-Pin 6 x 5 mm DFN Packages
General Description
The MCP1406/07 devices are a family of
buffers/MOSFET drivers that feature a single-output
with 6A peak drive current capability, low shoot-through
current, matched rise/fall times and propagation delay
times. These devices are pin-compatible and are
improved versions of the TC4420/TC4429 MOSFET
drivers.
The MCP1406/07 MOSFET drivers can easily charge
and discharge 2500 pF gate capacitance in under
20 ns, provide low enough impedances (in both the ON
and OFF states) to ensure that intended state of the
MOSFETs will not be affected, even by large transients.
The input to the MCP1406/07 may be driven directly
from either TTL or CMOS (3V to 18V).
These devices are highly latch-up resistant under any
conditions that fall within their power and voltage
ratings. They are not subject to damage when up to 5V
of noise spiking (of either polarity) occurs on the ground
pin. All terminals are fully protected against
electrostatic discharge (ESD), up to 2.0 kV (HBM) and
400V (MM).
The MCP1406/07 single-output 6A MOSFET driver
family is offered in both surface-mount and
pin-through-hole packages with a -40°C to +125°C
temperature rating, making it useful in any wide
temperature range application.
Applications
•
•
•
•
Switch Mode Power Supplies
Pulse Transformer Drive
Line Drivers
Motor and Solenoid Drive
2006-2016 Microchip Technology Inc.
DS20002019C-page 1
MCP1406/07
1.0
ELECTRICAL
CHARACTERISTICS
†
Notice:
Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational sections of this
specification is not intended. Exposure to maximum
rating conditions for extended periods may affect
device reliability.
Absolute Maximum Ratings †
Supply Voltage ................................................................+20V
Input Voltage ..................................(V
DD
+0.3V) to (GND -5V)
Input Current (V
IN
> V
DD
) ..............................................50 mA
Package Power Dissipation (TA <= +70°C)
DFN-S .......................................................................2.5W
PDIP..........................................................................1.2W
SOIC .......................................................................0.83W
TO-220 ......................................................................3.9W
ESD Protection on all Pins ................2 kV (HBM), 400V (MM)
DC CHARACTERISTICS
Electrical Specifications:
Unless otherwise indicated, T
A
= +25°C, with 4.5VV
DD
18V.
Parameters
Input
Logic ‘1’, High Input Voltage
Logic ‘0’, Low Input Voltage
Input Current
Input Voltage
Output
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Peak Output Current
Continuous Output Current
Latch-Up Protection Withstand
Reverse Current
Switching Time (Note
3)
Rise Time
Fall Time
Delay Time
Delay Time
Power Supply
Supply Voltage
Power Supply Current
Note 1:
2:
3:
V
DD
I
S
I
S
4.5
—
—
—
130
35
18.0
250
100
V
µA
µA
V
IN
= 3V
V
IN
= 0V
t
R
t
F
t
D1
t
D2
—
—
—
—
20
20
40
40
30
30
55
55
ns
ns
ns
ns
Figure 4-1, Figure 4-2
C
L
= 2500 pF
Figure 4-1, Figure 4-2
C
L
= 2500 pF
Figure 4-1, Figure 4-2
Figure 4-1, Figure 4-2
V
OH
V
OL
R
OH
R
OL
I
PK
I
DC
I
REV
V
DD
– 0.025
—
—
—
—
1.3
—
1.5
—
—
—
2.1
1.5
6
—
0.025
2.8
2.5
—
V
V
A
A
A
DC Test
DC Test
I
OUT
= 10 mA, V
DD
= 18V
I
OUT
= 10 mA, V
DD
= 18V
V
DD
½
18V
(Note
1)
Note 1, Note 2
Duty cycle2%, t
300
µs
V
IH
V
IL
I
IN
V
IN
2.4
—
–10
-5
1.8
1.3
—
—
—
0.8
10
V
DD
+ 0.3
V
V
µA
V
0VV
IN
V
DD
Sym.
Min.
Typ.
Max.
Units
Conditions
Tested during characterization, not production tested.
Valid for AT (TO-220) and MF (DFN-S) packages only. T
A
= +25°C
Switching times ensured by design.
DS20002019C-page 4
2006-2016 Microchip Technology Inc.
MCP1406/07
DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE)
Electrical Specifications:
Unless otherwise indicated, operating temperature range with 4.5V
V
DD
18V.
Parameters
Input
Logic ‘1’, High Input Voltage
Logic ‘0’, Low Input Voltage
Input Current
Input Voltage
Output
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Switching Time (Note
1)
Rise Time
Fall Time
Delay Time
Delay Time
Power Supply
Supply Voltage
Power Supply Current
Note 1:
V
DD
I
S
4.5
—
—
Switching times ensured by design.
—
200
50
18.0
500
150
V
µA
V
IN
= 3V
V
IN
= 0V
t
R
t
F
t
D1
t
D2
—
—
—
—
25
25
50
50
40
40
65
65
ns
ns
ns
ns
Figure 4-1, Figure 4-2
C
L
= 2500 pF
Figure 4-1, Figure 4-2
C
L
= 2500 pF
Figure 4-1, Figure 4-2
Figure 4-1, Figure 4-2
V
OH
V
OL
R
OH
R
OL
V
DD
– 0.025
—
—
—
—
—
3.0
2.3
—
0.025
5.0
5.0
V
V
DC TEST
DC TEST
I
OUT
= 10 mA, V
DD
= 18V
I
OUT
= 10 mA, V
DD
= 18V
V
IH
V
IL
I
IN
V
IN
2.4
—
-10
-5
—
—
—
—
—
0.8
+10
V
DD
+0.3
V
V
µA
V
0VV
IN
V
DD
Sym.
Min.
Typ.
Max.
Units
Conditions
2006-2016 Microchip Technology Inc.
DS20002019C-page 5
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