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CTLDM303N-M832DS BK

Description
MOSFET DUAL N-CHANNEL
Categorysemiconductor    Discrete semiconductor   
File Size824KB,5 Pages
ManufacturerCentral Semiconductor
Environmental Compliance
Download Datasheet Parametric View All

CTLDM303N-M832DS BK Overview

MOSFET DUAL N-CHANNEL

CTLDM303N-M832DS BK Parametric

Parameter NameAttribute value
FET type2 N-channel (dual)
FET functionstandard
Drain-source voltage (Vdss)30V
Current - Continuous Drain (Id) at 25°C3.6A(Ta)
Rds On (maximum value) when different Id, Vgs40 milliohms @ 1.8A, 4.5V
Vgs (th) (maximum value) when different Id1.25V @ 250µA
Gate charge (Qg) at different Vgs (maximum value)13nC @ 4.5V
Input capacitance (Ciss) at different Vds (maximum value)590pF @ 10V
Power - Max1.65W
Operating temperature-55°C ~ 150°C(TJ)
Installation typesurface mount
Package/casing8-TDFN Exposed Pad
Supplier device packagingTLM832DS
CTLDM303N-M832DS
SURFACE MOUNT
DUAL N-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CTLDM303N-M832DS
is a dual enhancement-mode N-Channel silicon MOSFET
designed for high speed pulsed amplifier and driver
applications. This energy efficient MOSFET offers
beneficially low rDS(ON), low gate charge, and low
threshold voltage.
MARKING CODE: C330
TLM832DS CASE
APPLICATIONS:
DC-DC converters
Drive circuits
Power management
MAXIMUM RATINGS:
(TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State)
Maximum Pulsed Drain Current, tp=10μs
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance (Note 1)
FEATURES:
Low rDS(ON) (0.078Ω MAX @ VGS=2.5V)
High current (ID=3.6A)
Low gate charge
SYMBOL
VDS
VGS
ID
IDM
PD
TJ, Tstg
Θ
JA
UNITS
V
V
A
A
W
°C
°C/W
30
12
3.6
14.4
1.65
-55 to +150
76
ELECTRICAL CHARACTERISTICS PER TRANSISTOR:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
I
GSSF, IGSSR VGS=12V, VDS=0
10
IDSS
BVDSS
VGS(th)
rDS(ON)
rDS(ON)
Qg(tot)
Qgs
Qgd
gFS
Crss
Ciss
Coss
ton
toff
VDS=20V, VGS=0
VGS=0, ID=250μA
VGS=VDS, ID=250μA
VGS=4.5V, ID=1.8A
VGS=2.5V, ID=1.8A
VDD=10V, VGS=4.5V, ID=3.6A
VDD=10V, VGS=4.5V, ID=3.6A
VDD=10V, VGS=4.5V, ID=3.6A
VDS=5.0V, ID=3.6A
VDS=10V, VGS=0, f=1.0MHz
VDS=10V, VGS=0, f=1.0MHz
VDS=10V, VGS=0, f=1.0MHz
VDD=10V, VGS=4.0V, ID=3.6A, RG=10Ω
VDD=10V, VGS=4.0V, ID=3.6A, RG=10Ω
54mm
2
UNITS
μA
μA
V
V
Ω
Ω
nC
nC
nC
S
pF
pF
pF
ns
ns
1.0
30
0.6
0.033
0.042
5.0
0.9
1.0
11.8
55
590
50
15
29
1.2
0.04
0.078
13
1.4
2.7
Notes: (1) FR-4 Epoxy PCB with copper mounting pad area of
R2 (8-October 2012)

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