4
GBU601 - GBU607
Taiwan Semiconductor
6A, 50V - 1000V Glass Passivated Single-Phase Bridge Rectifier
FEATURES
●
●
●
●
●
●
Ideal for printed circuit board
High case dielectric strength of 1500 V
RMS
High surge current capability
Typical I
R
less than 0.1μA
UL Recognized File # E-326243
Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
KEY PARAMETERS
PARAMETER
I
F(AV)
V
RRM
I
FSM
T
J MAX
Package
Configuration
VALUE
6
50 - 1000
175
150
GBU
Quad
UNIT
A
V
A
°C
APPLICATIONS
●
●
●
●
Switching mode power supply (SMPS)
Adapters
TV
Monitor
MECHANICAL DATA
● Case: GBU
● Molding compound meets UL 94V-0 flammability rating
● Packing code with suffix "G" means green compound
(halogen-free)
● Part no. with suffix “H” means AEC-Q101 qualified
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Polarity: As marked
● Mounting torque: 0.56 Nm max
● Weight: 4 g (approximately)
GBU
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Marking code on the device
Repetitive peak reverse voltage
Reverse voltage, total rms value
Maximum DC blocking voltage
Forward current
Surge peak forward current, 8.3 ms
single half sine-wave superimposed
on rated load per diode)
Rating of fusing ( t<8.3ms)
Junction temperature
Storage temperature
V
RRM
V
R(RMS)
V
DC
I
F(AV)
I
FSM
It
T
J
T
STG
1
2
SYMBOL
GBU
601
GBU
601
50
35
50
GBU
602
GBU
602
100
70
100
GBU
603
GBU
603
200
140
200
GBU
604
GBU
604
400
280
400
6
175
127
GBU
605
GBU
605
600
420
600
GBU
606
GBU
606
800
560
800
GBU
607
GBU
607
1000
700
1000
UNIT
V
V
V
A
A
As
°C
°C
2
- 55 to +150
- 55 to +150
Version:L1705
4
GBU601 - GBU607
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
Junction-to-ambient thermal resistance
Junction-to-case thermal resistance
SYMBOL
R
ӨJA
R
ӨJC
LIMIT
21
2
UNIT
°C/W
°C/W
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Forward voltage per diode
(1)
CONDITIONS
I
F
=3A, T
J
=25°C
I
F
=6A, T
J
=25°C
(2)
SYMBOL
V
F
TYP
-
-
-
MAX
1.0
1.1
5
500
UNIT
V
V
μA
μA
Reverse current @ rated V
R
per diode
T
J
= 25°C
T
J
=125°C
GBU601
GBU602
GBU603
I
R
-
211
1 MHz, V
R
=4.0V
C
J
94
-
pF
Junction capacitance
GBU604
GBU605
GBU606
GBU607
-
pF
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
ORDERING INFORMATION
PART NO.
PART NO.
SUFFIX
H
PACKING
CODE
C2
GBU60x
(Note 1)
D2
X0
Note:
1. "x" defines voltage from 50V (GBU601) to 1000V (GBU607)
*: Optional available
G
GBU
PACKING CODE
SUFFIX(*)
PACKAGE
PACKING
20 / Tube
20 / Tube
Forming
EXAMPLE P/N
EXAMPLE P/N
GBU606HC2G
PART NO.
GBU606
PART NO.
SUFFIX
H
PACKING
CODE
C2
PACKING CODE
SUFFIX
G
DESCRIPTION
AEC-Q101 qualified
Green compound
2
Version:L1705
4
GBU601 - GBU607
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.1 Forward Current Derating Curve
10
AVERAGE FORWARD CURRENT (A)
1000
Fig.2 Typical Junction Capacitance
8
CAPACITANCE (pF)
GBU601 - GBU604
6
100
GBU605 - GBU607
4
2
RESISTER OR
INDUCTIVE LOAD
WITH HEATSINK
10
0
25
50
75
100
125
150
0.1
f=1.0MHz
Vsig=50mVp-p
1
10
100
0
CASE TEMPERATURE (
o
C)
REVERSE VOLTAGE (V)
Fig.3 Typical Reverse Characteristics
INSTANTANEOUS REVERSE CURRENT (μA)
INSTANTANEOUS FORWARD CURRENT (A)
1000
100 10
Fig.4 Typical Forward Characteristics
100
T
J
=125°C
10
1
10
0.1
UF1DLW
T
J
=125°C
T
J
=25°C
(A)
Pulse width
1
T
J
=25°C
1
0.01
0.001
0.1
0.6
0.3
0.4
0.7
0.5
0.8
0.6
0.9
0.7
1
0.8
0.9
1.1
1
1.2
1.1
1.3
1.2
0.1
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FORWARD VOLTAGE (V)
3
Version:L1705
4
GBU601 - GBU607
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.5 Maximum Non-repetitive Forward Surge Current
PEAK FORWARD SURGE CURRENT (A)
175
150
125
100
75
50
25
0
1
10
NUMBER OF CYCLES AT 60 Hz
100
8.3ms Single Half Sine Wave
4
Version:L1705
RF/Wirelessly
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