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UGS5JHMNG

Description
DIODE GEN PURP 600V 5A TO263AB
CategoryDiscrete semiconductor    diode   
File Size200KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
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UGS5JHMNG Overview

DIODE GEN PURP 600V 5A TO263AB

UGS5JHMNG Parametric

Parameter NameAttribute value
MakerTaiwan Semiconductor
package instructionD2PAK-3/2
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresHIGH RELIABILITY, LOW POWER LOSS
applicationEFFICIENCY
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)2 V
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
Maximum non-repetitive peak forward current65 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current5 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
GuidelineAEC-Q101
Maximum repetitive peak reverse voltage600 V
Maximum reverse current20 µA
Maximum reverse recovery time0.02 µs
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
UGS5J
Taiwan Semiconductor
CREAT BY ART
5A, 600V Surface Mount Ultra Fast Rectifier
FEATURES
- Ideal for automated placement
- High efficiency, low VF
- High surge current capability
- High reliability
- Low power loss
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
TO-263AB (D PAK)
MECHANICAL DATA
Case:
TO-263AB (D
2
PAK)
Molding compound: UL flammability classification rating 94V-0
Moisture sensitivity level: level 1, per J-STD-020
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity:
As marked
Weight:
1.33 g (approximately)
2
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage T
J
=25°C
I
F
=5A
T
J
=125°C
Maximum reverse current @ rated V
R
Maximum reverse recovery time (Note 1)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Test conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
T
J
=25°C
T
J
=125°C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
t
rr
R
θJC
T
J
T
STG
UGS5J
600
420
600
5
65
2.0
1.8
20
250
20
3
- 55 to +150
- 55 to +150
UNIT
V
V
V
A
A
V
μA
ns
°C/W
°C
°C
Version: B1511

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Description DIODE GEN PURP 600V 5A TO263AB 20ns, 5A, 600V, Ultra Fast Recovery Rectifier 20ns, 5A, 600V, Ultra Fast Recovery Rectifier Rectifier Diode, 1 Phase, 1 Element, 5A, 600V V(RRM), Silicon, TO-263AB, D2PAK-3/2
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