Silicon Bipolar High f
T
Low Noise
Medium Power 12 Volt Transistors
Features
•Low
Phase Noise Oscillator Transistor
•200
mW Driv er Amplifier Transistor
•Operation
to 8 GHz
•Av
ailable as Chip
•Av
ailable in Hermetic Surface Mount Packages
Description
The MP4T24300 series of high f
T
NPN medium power
bipolar transistors are designed for usage in oscillators
to 8 GHz and for moderate power driv er amplifiers
through 3 GHz with noise figure below 4 dB.
This industry standard transistor is av ailable as a chip
for hybrid oscillator circuits or in hermetic ceramic
packages for military usage. The chip and hermetic
packages may be screened to JANTXV equiv alent
lev els.
The MP4T243 transistors utilize sub-micron photolithog-
raphy and locos oxidation techniques to minimize para-
sitic capacitances. It also reduces shot noise enabling
improv ed low noise characteristics. These transistors
use a high temperature refractory barrier/gold
metalization process. The MP4T243 transistor is emitter
ballasted using ion implanted polysilicon resistors to
prev ent emitter current hot spots at high current
operation.
MP4T243 Series
V3.00
Case Styles
Chip
Micro-X
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
1
Tel (408) 432-1480
Fax (408)) 432-3440
Silicon Bipolar High f
T
Low Noise Medium Power 12 Volt Transistors
Absolute Maximum Ratings @ 25°
C
MP4T24300
Parameter
Collector-Base Voltage
1
Collector-Emitter Voltage
1
Emitter-Base Voltage
1
Collector Current
1
MP4T243 Series
V3.00
MP4T24335
Micro-X
25
12
1.5
110
200
-65 to +200
400
150
Symbol
V
CBO
V
CEO
V
EBO
I
C
T
j
T
STG
P
T
T
CP
Unit
Volts
Volts
Volts
mA
°
C
°
C
mW
°
C
Chip
25
12
1.5
110
200
-65 to +200
1000
150
Junction Temperature
Storage Temperature
Power Dissipation
1,3
Operating Temperature
2
1. At 25° case temperature (packaged transistors) or 25° mounting surface temperature (chip transistors).
C
C
2. Case or bonding surface temperature. Derate maximum power dissipation rating to zero watts at maximum operating temperature.
3. The thermal resistance of the MP4T24300 junction/case is 50°
C/watt nominal.
Electrical Specifications @ 25°
C
MP4T24300
Parameter
Gain Bandwidth Product
Insertion Power Gain
Condition
V
CE
= 12 volts
I
C
= 40 mA
V
CE
= 12 volts
I
C
= 40 mA
f = 1 GHz
f = 2 GHz
V
CE
= 12 volts
I
C
= 20 mA
f = 1 GHz
V
CE
= 12 volts
I
C
= 40 mA
f = 2 GHz
V
CE
= 12 volts
I
C
= 40 mA
f = 2 GHz
V
CE
= 12 volts
I
C
= 40 mA
f = 1 GHz
f = 2 GHz
Symbol
f
T
|S
21E
|
2
Units
GHz
dB
12 min
8 typ
NF
dB
3 typ
GTU (max)
aB
11 typ
MAG
dB
15 typ
P
1dB
dBm
24 typ
22 typ
24 typ
22 typ
15 typ
10.5 typ
3 typ
11 min
8 typ
Chip
7 typ
MP4T24335
Micro-X
7 typ
Noise Figure
Unilateral Gain
Maximum Available Gain
Power Out at 1 dB Compression
pecification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
2
Tel (408) 432-1480
Fax (408)) 432-3440
Moderate Power High fT NPN Silicon Transistor
Electrical Specifications @ 25°
C
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Forward Current Gain
Collector Base
Junction Capacitance
Condition
V
CB
= 15 volts
I
E
= 0
µA
V
EB
= 1 volt
I
C
= 0
µA
V
CE
= 8 volts
I
C
= 50 mA
V
CB
= 10 volts
I
E
= 0
µA
f = 1 MHz
Symbol
I
CBO
I
EBO
h
FE
C
CB
Min
20
Typical
90
0.60
MP4T243 Series
V2.00
Max
10
1
250
0.08
Units
µA
µA
pF
Typical Scattering Parameters in the MIcro-X Package
MP4T24335
V
CE
= 12 Volts, I
C
= 10 mA
Frequency
(MHz)
1000
2000
3000
4000
5000
6000
7000
8000
9000
10000
11000
S11E
Mag.
0.598
0.612
0.549
0.709
0.794
0.899
1.013
1.108
1.161
1.161
1.161
Angle
-157
177
153
133
115
96
75
53
30
13
13
Mag.
3.610
2.373
1.658
1.355
1.182
1.063
0.973
0.878
0.773
0.677
0.677
S21E
Angle
84.4
64.6
44.2
26.1
9.1
-7.4
-24.0
-41.0
-58.8
-73.2
-73.2
Mag.
0.114
0.127
0.146
0.173
0.207
0.246
0.296
0.360
0.438
0.500
0.500
S12E
Angle
27.6
27.3
29.4
30.9
30.2
27.1
21.5
13.4
2.5
9.2
9.4
Mag
0.378
0.286
0.253
0.269
0.314
0.367
0.439
0.559
0.757
0.949
0.949
S22E
Angle
-73.4
-90.7
-113.2
-138.5
-162.2
170.8
157.0
135.6
116.4
103.4
103.6
V
CE
= 12 Volts, I
C
= 20 mA
Frequency
(MHz)
1000
2000
3000
4000
5000
6000
7000
8000
9000
10000
11000
S11E
Mag.
0.574
0.591
0.635
0.696
0.788
0.890
1.018
1.106
1.165
1.147
1.147
Angle
-153
170
147
128
110
51
72
50
27
6
6
Mag.
4.510
2.433
1.777
1.465
1.298
1.180
1.090
1.000
0.875
0.723
0.723
S21E
Angle
90.3
64.3
45.3
27.5
11.1
-5.3
-23.1
-40.9
-60.0
-79.5
-79.5
Mag.
0.103
0.126
0.150
0.181
0.215
0.246
0.285
0.347
0.399
0.485
0.485
S12E
Angle
32.1
30.1
32.9
32.1
29.4
25.8
19.6
12.1
6.3
13.5
13.5
Mag
0.330
0.239
0.205
0.217
0.262
0.301
0.366
0.457
0.625
0.847
0.847
S22E
Angle
-78.0
-100.4
-126.2
-151.3
-169.0
-167.7
156.2
134.3
115.1
101.7
101.7
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
3
Tel (408) 432-1480
Fax (408)) 432-3440
Silicon Bipolar High f
T
Low Noise Medium Power 12 Volt Transistors
Typical Scattering Parameters in the MIcro-X Package
MP4T24335 ( Continued )
MP4T243 Series
V3.00
V
CE
= 12 Volts, I
C
= 40 mA
Frequency
(MHz)
1000
2000
3000
4000
5000
6000
7000
8000
9000
10000
S11E
Mag.
0.571
0.603
0.650
0.701
0.788
0.879
0.982
1.057
1.101
1.097
Angle
-164
166
141
123
104
86
66
46
25
5
Mag.
4.410
2.533
1.875
1.485
1.305
1.163
1.065
0.932
0.815
0.675
S21E
Angle
88.2
65.6
44.5
27.0
10.2
-6.0
-23.1
-40.8
-57.8
-76.6
Mag.
0.092
0.118
0.146
0.178
0.210
0.247
0.290
0.333
0.389
0.450
S12E
Angle
35.3
35.2
35.2
33.4
31.2
26.3
21.4
14.6
5.8
-8.5
Mag
0.282
0.196
0.176
0.183
0.216
0.255
0.317
0.391
0.502
0.656
S22E
Angle
-83.2
-105.6
-127.1
-147.4
-169.0
171.8
153.6
135.8
116.6
96.7
V
CE
= 12 Volts, I
C
= 60 mA
Frequency
(MHz)
1000
2000
3000
4000
5000
6000
7000
8000
9000
10000
S11E
Mag.
0.577
0.608
0.652
0.701
0.786
0.874
0.972
1.045
1.086
1.084
Angle
-168
165
140
123
105
86
67
46
25
7
Mag.
4.055
2.330
1.728
1.382
1.215
1.085
0.990
0.873
0.760
0.638
S21E
Angle
86.4
64.7
44.4
27.1
10.6
-5.6
-22.0
-39.4
-55.6
-73.3
Mag.
0.084
0.111
0.140
0.171
0.204
0.242
0.288
0.334
0.394
0.462
S12E
Angle
35.1
37.7
38.0
36.5
34.6
29.8
5.0
18.1
9.7
-4.7
Mag
0.268
0.200
0.185
0.192
0.218
0.254
0.320
0.396
0.508
0.668
S22E
Angle
-72.9
-88.8
-108.3
-127.9
-147.4
-160.4
-161.7
-145.7
125.8
105.7
pecification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
4
Tel (408) 432-1480
Fax (408)) 432-3440
Moderate Power High fT NPN Silicon Transistor
Typical Performance Curves
MP4T243 Series
V2.00
DC SAFE OPERATING RANGE AT 25°
C
200
COLLECTOR CURRENT (mA)
160
140
120
100
80
60
40
20
0
2
4
6
8
10
12
14
COLLECTOR EMITTER
VOLTAGE (Volts)
MP4T24335
Micro-X
POWER DERATING CURVES
1000
900
TOTAL POWER
DISSIPATION (mW)
800
700
600
500
400
300
200
100
0
-25
0
25
50
75
100
125
150
175
200
AMBIENT TEMP (C)
MP4T24335
Micro-X
MP4T24300
Chip on 25C
Heat Sink
180
MP4T24300
Chip on 25C
Heat Sink
NOMINAL COLLECTOR-BASE CAPACITANCE vs
COLLECTOR-BASE VOLTAGE (MP4T24335)
1
COLLECTOR-BASE
CAPACITANCE (pF)
0.9
0.8
NOMINAL GAIN vs FREQUENCY at V
CE
= 12 Volts
and I
C
= 20 mA (MA4T24335)
16
14
12
GTU (MAX)
GAIN (dB)
10
8
6
4
2
|S
21
|2
0.7
0.6
0.5
0.4
1
10
COLLECTOR-BASE VOLTAGE
(Volts)
100
0
1
FREQUENCY (GHz)
10
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
5
Tel (408) 432-1480
Fax (408)) 432-3440
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