Low OperatingVoltage, High f
T
Bipolar Microwave Transistors
Features
•Designed
for Battery Operation
•f
T
to 10 GHz
•Low
Voltage Oscillator and Amplifier
•Low
Phase Noise and Noise Figure
•Hermetic
and Surface Mount Packages and
Chips Av ailable
•Can
be Screened to JANTX, JANTXV Equiv alent Lev els
Description
The MP4T6365 family of low v oltage, high gain band-
width silicon NPN bipolar transistors prov ides low noise
figure and high gain at low bias v oltages. These transis-
tors are especially attractiv e for low operating v oltage
low noise amplifiers or driv er amplifiers at frequencies
to 4 GHz. They are also useful for low phase noise local
oscillators and VCOs in battery operated equipment to
10 GHz.
The MP4T6365 family was designed to hav e low noise
figure at operating v oltages as low as 3 v olts. These
transistors also exhibit low phase noise in VCOs
operating at 5 v olts or less.
Because this transistor family was specifically designed
to perate from low bias v oltage, it has superior phase
noise in comparison to similar current bipolar transistors
with higher collector breakdown v oltage when operating
under the same low v oltage conditions.
The MP4T6365 series transistors are av ailable in
hermetic Micro-X packages, the SOT-23, the SOT-143,
and in chip form (MP4T636500). Other stripline and
hermetic packages are av ailable.
The chip and
hermetic packages can be screened to JANTX, JANTXV
equiv alent lev els. The plastic parts can be supplied on
tape and reel.
All of M-Pulse’ silicon bipolar transistor families use
s
silicon dioxide and silicon nitride passiv ation to assure
low 1/F noise for amplifier and oscillator applications.
MP4T6365
V2.00
Case Styles
SOT-23
SOT-143
Chip
Micro-X
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
1
Tel (408) 432-1480
Fax (408)) 432-3440
Low Operating Voltage, High f
T
Bipolar Microwave Transistors
Maximum Ratings (TA = 25°
C)
MP4T6365 Series
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Junction Operating Temperature
Storage Temperature
Chip or Ceramic Packages
Plastic Packages
Power Dissipation
Package Type
Chip (MP4T636500)
SOT-23 (MP4T636533)
Micro-X Package (MP4T636535)
SOT-143 (MP4T636539)
Maximum Dissipation
@ 25°
C
400 mW
200 mW
300 mW
225 mW
Maximum Operating
Temperature
175°
C
125°
C
150°
C
125°
C
V
CBO
V
CE
V
EB
I
C
T
j
T
S
10 V
6V
1.5 V
65 mA
200°
C
-65° to +200°
C
C
-65° to +125°
C
C
MP4T6365 Series
V2.00
Electrical Specifications @ 25°
C
MP4T6365 Series
MP4T636500
Parameter of Test
Gain Bandwidth Product
Insertion Power Gain
Condition
V
CE
= 3 V
I
C
= 20 mA
V
CE
= 3 V
I
C
= 10 mA
f = 1 GHz
f = 2 GHz
V
CE
= 3 V
I
C
= 5 mA
f = 1 GHz
f = 2 GHz
V
CE
= 3 V
I
C
= 5 mA
f = 1 GHz
f = 2 GHz
V
CE
= 3 V
I
C
= 20 mA
f = 1 GHz
f = 2 GHz
V
CE
= 3 V
I
C
= 20 mA
f = 2 GHz
f = 4 GHz
Symbol
f
T
|S
21E
|
2
Units
GHz
dB
14 typ
7.0 min
NF
dB
1.3 typ
1.6 typ
GTU (max)
dB
15 typ
10 typ
MAG
dB
16 typ
12 typ
P
1dB
dBm
16 typ
12 typ
17 typ
13 typ
16 typ
12 typ
16 typ
12 typ
16 typ
11 typ
16 typ
10 typ
16 typ
10 typ
15 typ
10 typ
14 typ
9 typ
14 typ
9 typ
1.3 typ
1.6 typ
1.4 typ
1.7 typ
1.4 typ
1.7 typ
13 typ
7.0 min
13 typ
7.0 min
13 typ
7.0 min
Chip
10 typ
MP4T636535
Micro-X
10 typ
MP4T636539
SOT-143
10 typ
MP4T636533
SOT-23
10 typ
Noise Figure
Unilateral Gain
Maximum Available Gain
Output Power at 1 dB
Compression
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
2
Tel (408) 432-1480
Fax (408)) 432-3440
Low Operating Voltage, High fT Bipolar Microwave Transistors
Electrical Specifications @ 25°
C
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Forward Current Gain
Collector-Base
Junction Capacitance
Condition
V
CB
= 3 volts
I
E
= 0
µA
V
EB
= 1 volt
I
C
= 0
µA
V
CE
= 3 volts
I
C
= 5 mA
V
CB
= 5 volts
I
E
= 0
µA
f = 1 MHz
Symbol
I
CBO
I
EBO
h
FE
C
OB
Min
30
Typical
75
0.50
MP4T6365 Series
V2.00
Max
100
1
200
0.70
Units
µA
µA
pF
Typical Common Emitter Scattering Parameters in the MIcro-X Package
MP4T636535, V
CE
= 3 Volts, I
C
= 5 mA
Frequency
(MHz)
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
5500
6000
S11E
Mag.
0.640
0.580
0.571
0.590
0.597
0.622
0.646
0.676
0.712
0.750
0.793
0.833
Angle
-103
-153
-175
168
155
144
134
124
115
106
96
88
Mag.
6.343
3.984
2.813
2.214
1.853
1.632
1.460
1.341
1.241
1.191
1.130
1.081
S21E
Angle
116.9
91.5
77.9
67.0
57.9
48.2
40.1
31.7
23.7
16.4
8.4
2.5
Mag.
0.103
0.123
0.135
0.146
0.159
0.174
0.190
0.205
0.218
0.238
0.257
0.272
S12E
Angle
38.7
29.0
27.7
26.8
27.3
27.3
26.8
25.6
24.1
22.2
20.2
17.3
Mag
0.534
0.346
0.250
0.242
0.211
0.227
0.229
0.238
0.255
0.277
0.310
0.323
S22E
Angle
-75.2
-103.0
-124.9
-140.4
-150.2
-164.1
-168.0
170.7
167.9
157.8
153.0
145.0
MP4T636535, V
CE
= 3 Volts, I
C
= 10 mA
Frequency
(MHz)
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
5500
6000
S11E
Mag.
0.580
0.589
0.592
0.617
0.625
0.652
0.676
0.707
0.741
0.776
0.817
0.855
Angle
-142
-175
170
157
146
136
127
118
109
100
91
82
Mag.
8.562
4.641
3.200
2.480
2.069
1.811
1.613
1.479
1.366
1.311
1.240
1.118
S21E
Angle
104.6
85.8
75.1
65.9
57.9
48.9
41.3
33.3
25.6
18.5
10.6
3.0
Mag.
0.066
0.086
0.106
0.125
0.150
0.172
0.195
0.218
0.234
0.259
0.281
0.298
S12E
Angle
39.1
40.5
42.9
43.0
42.7
40.8
38.3
35.1
31.9
28.1
24.9
20.5
Mag
0.389
0.274
0.228
0.243
0.220
0.250
0.251
0.270
0.281
0.311
0.342
0.351
S22E
Angle
-102.8
-132.0
-158.1
-169.4
171.9
166.9
161.4
150.2
146.1
135.9
132.5
125.1
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
3
Tel (408) 432-1480
Fax (408)) 432-3440
Low Operating Voltage, High f
T
Bipolar Microwave Transistors
Typical Common Emitter Scattering Parameters in the MIcro-X Package (Cont’
d)
MP4T636535, V
CE
= 3 Volts, I
C
= 20 mA
Frequency
(MHz)
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
5500
6000
S11E
Mag.
0.551
0.567
0.577
0.599
0.611
0.633
0.659
0.689
0.724
0.758
0.800
0.840
Angle
-160
177
164
153
143
133
125
116
107
99
90
82
Mag.
9.374
4.916
3.373
2.613
2.174
1.898
1.690
1.552
1.444
1.378
1.309
1.252
S21E
Angle
99.1
84.2
74.7
66.4
58.9
50.6
43.4
35.8
28.4
21.4
13.5
6.0
Mag.
0.048
0.071
0.094
0.117
0.144
0.169
0.194
0.219
0.238
0.263
0.287
0.304
S12E
Angle
46.7
52.5
54.2
53.2
52.0
49.2
45.9
42.1
38.3
33.9
30.0
25.3
MP4T6365 Series
V2.00
S22E
Mag
0.321
0.238
0.217
0.223
0.214
0.232
0.242
0.256
0.274
0.294
0.319
0.333
Angle
-111.2
-139.5
-161.0
-171.4
168.4
163.6
159.3
149.4
144.3
135.8
130.4
124.2
MP4T636535, V
CE
= 3 Volts, I
C
= 40 mA
Frequency
(MHz)
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
5500
6000
S11E
Mag.
0.589
0.604
0.620
0.642
0.666
0.681
0.704
0.738
0.777
0.819
0.858
0.896
Angle
-173
141
159
149
138
128
119
110
101
92
82
73
Mag.
9.150
5.202
3.505
2.685
2.218
1.935
1.710
1.560
1.445
1.365
1.290
1.228
S21E
Angle
93.6
80.8
70.8
62.2
54.1
45.9
37.6
29.8
22.3
14.5
6.7
-1.4
Mag.
0.044
0.067
0.094
0.119
0.145
0.172
0.195
0.218
0.240
0.262
0.284
0.305
S12E
Angle
55.7
59.2
58.6
56.4
53.8
50.0
46.0
41.9
37.8
33.7
29.9
25.5
Mag
0.275
0.220
0.210
0.210
0.212
0.220
0.234
0.248
0.265
0.283
0.301
0.328
S22E
Angle
-120.0
-147.2
-164.0
174.3
171.8
168.3
161.2
153.7
147.0
140.6
134.8
128.3
MP4T636535, V
CE
= 3 Volts, I
C
= 60 mA
Frequency
(MHz)
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
5500
6000
S11E
Mag.
0.604
0.614
0.631
0.655
0.681
0.697
0.721
0.758
0.798
0.843
0.883
0.922
Angle
-179
167
156
146
135
125
116
107
97
88
79
69
Mag.
8.203
4.730
3.220
2.480
2.048
1.778
1.573
1.430
1.325
1.255
1.190
1.125
S21E
Angle
92.9
80.5
69.9
60.6
51.8
43.3
34.8
26.8
19.3
11.4
3.3
-5.2
Mag.
0.040
0.084
0.091
0.116
0.141
0.166
0.189
0.211
0.232
0.254
0.279
0.298
S12E
Angle
60.9
63.6
61.8
59.0
55.8
51.9
47.9
43.9
40.0
36.2
32.4
27.6
Mag
0.242
0.189
0.182
0.181
0.182
0.190
0.204
0.217
0.234
0.253
0.278
0.300
S22E
Angle
-112.0
-139.1
-155.9
-168.3
-172.5
-174.3
170.8
164.7
158.5
152.9
146.6
138.4
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
4
Tel (408) 432-1480
Fax (408)) 432-3440
Low Operating Voltage, High fT Bipolar Microwave Transistors
MP4T6365
Typical Performance Curves
MP4T6365 Series
V2.00
POWER DERATING CURVES
500
450
TOTAL POWER
DISSIPATION (mW)
400
350
300
250
200
150
100
50
0
0
25
50
75
100
125
150
175
AMBIENT TEMP (7C)
MP4T636533 in
SOT-23 Package
MP4T636535 in
Micro-X Package
MP4T636500 Chip on
Infinite Heat Sink
NOMINAL COLLECTOR-BASE CAPACITANCE (C
OB
)
vs COLLECTOR-BASE VOLTAGE (MP4T636535)
1.1
1
COLLECTOR-BASE
CAPACITANCE (pF)
0.9
0.8
0.7
0.6
0.5
0.4
0
5
10
15
COLLECTOR-BASE VOLTAGE
(Volts)
NOMINAL GAIN vs FREQUENCY at
V
CE
= 3 Volts, I
C
= 10 mA (MP4T636535)
24
GAIN (dB)
20
GAIN (dB)
16
GTU (MAX)
12
8
|S
21E
|2
4
0
1
2
FREQUENCY (GHz)
5
10
NOMINAL GAIN vs COLLECTOR CURRENT at
f = 1.0 GHz, V
CE
= 3 Volts (MP4T636535)
20
19
18
17
16
15
14
13
12
11
1
10
COLLECTOR CURRENT (mA)
100
|S
21E
|2
GTU (MAX)
MAG
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
5
Tel (408) 432-1480
Fax (408)) 432-3440
PCB Design
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