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RJK2076DPA-00#J5A

Description
MOSFET N-CH 200V 20A WPAK
Categorysemiconductor    Discrete semiconductor   
File Size90KB,7 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
Download Datasheet Parametric View All

RJK2076DPA-00#J5A Overview

MOSFET N-CH 200V 20A WPAK

RJK2076DPA-00#J5A Parametric

Parameter NameAttribute value
FET typeN channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)200V
Current - Continuous Drain (Id) at 25°C20A(Ta)
Drive voltage (maximum Rds On, minimum Rds On)10V
Rds On (maximum value) when different Id, Vgs85 milliohms @ 10A, 10V
Vgs (th) (maximum value) when different Id-
Gate charge (Qg) at different Vgs (maximum value)19nC @ 10V
Vgs (maximum value)±30V
Input capacitance (Ciss) at different Vds (maximum value)1200pF @ 25V
FET function-
Power dissipation (maximum)65W(Tc)
Operating temperature150°C(TJ)
Installation typesurface mount
Supplier device packagingWPAK(3F)(5x6)
Package/casing8-PowerVDFN
Preliminary
Datasheet
RJK2076DPA
200V - 20A - MOS FET
High Speed Power Switching
Features
Low on-resistance
R
DS(on)
= 0.068
typ. (at I
D
= 10 A, V
GS
= 10 V, Ta = 25C)
Very low gate charge
Qg = 19 nC typ. (at V
DD
= 160 V, V
GS
= 10 V, I
D
= 20 A, Ta = 25C)
Low leakage current
High speed switching
R07DS0859EJ0200
Rev.2.00
Jan 08, 2013
Outline
RENESAS Package code: PWSN0008DE-A
(Package name: WPAK(3F))
5 6 7 8
D D D D
5 6 7 8
4
G
4 3 2 1
1, 2, 3
Source
4
Gate
5, 6, 7, 8 Drain
S S S
1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1.
2.
3.
4.
PW
10
s,
duty cycle
1%
STch = 25C, Tch
150C
Value at Tc = 25C
Limited by maximum safe operation area
Symbol
V
DSS
V
GSS
Note4
I
D
I
D (pulse)
I
DR
I
DR (pulse)Note1
I
APNote2
E
ARNote2
Pch
Note3
ch-c
Tch
Tstg
Note1
Ratings
200
±30
20
40
20
40
9
5.4
65
1.93
150
–55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
C/W
C
C
R07DS0859EJ0200 Rev.2.00
Jan 08, 2013
Page 1 of 6
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