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BC807-25 RFG

Description
TRANSISTOR, PNP, -45V, -0.5A, 16
Categorysemiconductor    Discrete semiconductor   
File Size368KB,6 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
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BC807-25 RFG Overview

TRANSISTOR, PNP, -45V, -0.5A, 16

BC807-25 RFG Parametric

Parameter NameAttribute value
Transistor typePNP
Current - Collector (Ic) (Maximum)500mA
Voltage - collector-emitter breakdown (maximum)45V
Vce saturation value (maximum value) when different Ib,Ic700mV @ 50mA,500mA
Current - collector cutoff (maximum)200nA(ICBO)
DC current gain (hFE) at different Ic, Vce (minimum value)160 @ 100mA,1V
Power - Max300mW
Frequency - Transition100MHz
Operating temperature-55°C ~ 150°C(TJ)
Installation typesurface mount
Package/casingTO-236-3,SC-59,SOT-23-3
Supplier device packagingSOT-23
BC807-16/-25/-40
Taiwan Semiconductor
0.3W, PNP Plastic-Encapsulate Transistor
FEATURES
Low power loss, high efficiency
Ideal for automated placement
High surge current capability
Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
KEY PARAMETERS
PARAMETER
V
CBO
V
CEO
V
EBO
I
C
h
FE
Package
Configuration
VALUE
-50
-45
-5
-0.5
250-600
SOT-23
Single Dice
UNIT
V
V
V
A
APPLICATIONS
Switching mode power supply (SMPS)
Adapters
Lighting application
On-board DC/DC converter
MECHANICAL DATA
Case: SOT-23
Molding compound meets UL 94 V-0 flammability rating
Moisture sensitivity level: level 1, per J-STD-020
Packing code with suffix "G" means green compound
(halogen-free)
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 1A whisker test
● Weight: 0.008grams (approximately)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Marking code on the device
Power dissipation
Collector-base voltage, emitter open
Collector-emitter voltage, base open
Emitter-base voltage, collector open
Collector current, dc
Junction temperature
Storage temperature
I
C
= -10 μA, I
E
= 0
I
C
= -10 mA, I
B
= 0
I
E
= -1 μA, I
C
= 0
P
D
V
CBO
V
CEO
V
EBO
I
C
T
J
T
STG
SYMBOL
BC807- BC807- BC807-
16
5A
25
5B
0.3
-50
-45
-5
-0.5
-55 to +150
-55 to +150
40
5C
UNIT
W
V
V
V
A
°C
°C
1
Version:H1702

BC807-25 RFG Related Products

BC807-25 RFG BC807-16 RFG
Description TRANSISTOR, PNP, -45V, -0.5A, 16 TRANSISTOR, PNP, -45V, -0.5A, 10
Transistor type PNP PNP
Current - Collector (Ic) (Maximum) 500mA 500mA
Voltage - collector-emitter breakdown (maximum) 45V 45V
Vce saturation value (maximum value) when different Ib,Ic 700mV @ 50mA,500mA 700mV @ 50mA,500mA
Current - collector cutoff (maximum) 200nA(ICBO) 200nA(ICBO)
DC current gain (hFE) at different Ic, Vce (minimum value) 160 @ 100mA,1V 100 @ 100mA,1V
Power - Max 300mW 300mW
Frequency - Transition 100MHz 100MHz
Operating temperature -55°C ~ 150°C(TJ) -55°C ~ 150°C(TJ)
Installation type surface mount surface mount
Package/casing TO-236-3,SC-59,SOT-23-3 TO-236-3,SC-59,SOT-23-3
Supplier device packaging SOT-23 SOT-23

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