BC847 series
Rev. 10 — 2 March 2017
45 V, 100 mA NPN general-purpose transistors
Product data sheet
1
Product profile
1.1 General description
NPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device
(SMD) plastic package.
Table 1. Product overview
Type number
BC847
BC847A
BC847B
BC847C
BC847W
BC847AW
BC847BW
BC847CW
BC847AM
BC847BM
BC847CM
[1] Valid for all available selection groups.
[1]
Package
Nexperia
SOT23
JEITA
-
JEDEC
TO-236AB
NPN complement
BC857
BC857A
BC857B
BC857C
SOT323
SC-70
-
BC857W
BC857AW
BC857BW
BC857CW
SOT883
SC-101
-
BC857AM
BC857BM
BC857CM
1.2 Features and benefits
•
•
•
•
General-purpose transistors
SMD plastic packages
Three different gain selections
AEC-Q101 qualified
1.3 Applications
•
General-purpose switching and amplification
Nexperia
45 V, 100 mA NPN general-purpose transistors
BC847 series
1.4 Quick reference data
Table 2. Quick reference data
T
amb
= 25 °C unless otherwise specified.
Symbol
V
CEO
I
C
h
FE
Parameter
collector-emitter voltage
collector current
DC current gain
h
FE
group A
h
FE
group B
h
FE
group C
V
CE
= 5 V; I
C
= 2 mA
Conditions
open base
Min
-
-
110
110
200
420
Typ
-
-
-
180
290
520
Max
45
100
800
220
450
800
Unit
V
mA
2
Pin
Pinning information
Symbol
B
E
C
Descrition
base
emitter
collector
3
B
E
C
Table 3. Pinning information
Simlified outline
Graphic symbol
SOT23; SOT323
1
2
3
1
2
sym123
SOT883
1
2
3
B
E
C
base
emitter
collector
1
2
Transparent
top view
C
3
B
E
sym123
BC847_SER
All information provided in this document is subject to legal disclaimers.
© Nexperia B.V. 2018. All rights reserved.
Product data sheet
Rev. 10 — 2 March 2017
2 / 16
Nexperia
45 V, 100 mA NPN general-purpose transistors
BC847 series
3
Ordering information
Package
Name
Description
plastic surface-mounted package; 3 leads
Version
SOT23
TO-236AB
Table 4. Ordering information
Type number
BC847
BC847A
BC847B
BC847C
BC847W
BC847AW
BC847BW
BC847CW
BC847AM
BC847BM
BC847CM
SC-101
lesdless ultra small plastic package; 3 solder lands; body 1.0 x
0.6 x 0.5 mm
SOT 883
SC-70
SOT323
4
Marking
Marking code
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
Table 5. Marking codes
Type number
BC847
BC847A
BC847B
BC847C
BC847W
BC847AW
BC847BW
BC847CW
BC847AM
BC847BM
BC847CW
[1] % = placeholder for manufacturing site code
1H%
1E%
1F%
1G%
1H%
1E%
1F%
1G%
D4
D5
D6
BC847_SER
All information provided in this document is subject to legal disclaimers.
© Nexperia B.V. 2018. All rights reserved.
Product data sheet
Rev. 10 — 2 March 2017
3 / 16
Nexperia
45 V, 100 mA NPN general-purpose transistors
BC847 series
5
Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
peak base current
total power dissipation
SOT23
SOT323
SOT883
T
j
T
amb
T
stg
junction temperature
ambient temperature
storage temperature
single pulse; t
p ≤ 1 ms
single pulse; t
p ≤ 1 ms
T
amb
≤ 25 °C
[1]
[1]
[2]
Conditions
open emitter
open base
open collector
Min
-
-
-
-
-
-
Max
50
45
6
100
200
100
Unit
V
V
V
mA
mA
mA
-
-
-
-
-65
-65
250
200
250
150
150
150
mW
mW
mW
°C
°C
°C
[1] Device mounted on an FR4 Printed-Circuit-Board (PCB); single-sided copper; tin-plated and standard footprint.
[2] Device mounted on an PCB with 60 μm copper strip line, standard footprint.
6
Thermal characteristics
Parameter
thermal resistance from junction
to ambient
SOT23
SOT323
SOT883
Conditions
in free air
[1]
[1]
[2]
Table 7. Thermal characteristics
Symbol
R
th(j-a)
Min
Typ
Max
Unit
-
-
-
-
-
-
500
625
500
K/W
K/W
K/W
[1] Device mounted on an FR4 PCB; single-sided copper; tin-plated and standard footprint.
[2] Device mounted on an PCB with 60 μm copper strip line, standard footprint.
BC847_SER
All information provided in this document is subject to legal disclaimers.
© Nexperia B.V. 2018. All rights reserved.
Product data sheet
Rev. 10 — 2 March 2017
4 / 16
Nexperia
45 V, 100 mA NPN general-purpose transistors
BC847 series
7
Characteristics
Table 8. Characteristics
T
amb
= 25 °C unless otherwise specified.
Symbol
I
CBO
I
EBO
h
FE
Parameter
collector-base
cut-off current
emitter-base
cut-off current
DC current gain
h
FE
group A
h
FE
group B
h
FE
group C
DC current gain
h
FE
group A
h
FE
group B
h
FE
group C
V
CEsat
V
BEsat
V
BE
f
T
C
c
C
e
NF
collector-emitter
saturation voltage
I
C
= 10 mA; I
B
= 0.5 mA
I
C
= 100 mA; I
B
= 5 mA
[1]
[2]
[2]
[2]
Conditions
V
CB
= 30 V; I
E
= 0 A
V
CB
= 30 V; I
E
= 0 A; T
j
= 150 °C
V
EB
= 5 V; I
C
= 0 A
V
CE
= 5 V; I
C
= 10 μA
Min
-
-
-
Typ
-
-
-
Max
15
5
100
Unit
nA
μA
nA
-
-
-
V
CE
= 5 V; I
C
= 2 mA
110
110
200
420
-
-
-
-
580
-
100
-
-
-
170
280
420
-
180
290
520
90
200
700
900
660
-
-
-
11
2
-
-
-
800
220
450
800
200
400
-
-
700
770
-
1.5
-
10
mV
mV
mV
mV
mV
mV
MHz
pF
pF
dB
base-emitter saturation I
C
= 10 mA; I
B
= 0.5 mA
voltage
I
C
= 100 mA; I
B
= 5 mA
base-emitter voltage
transition frequency
collector capacitance
emitter capacitance
noise figure
V
CE
= 5 V; I
C
= 2 mA
V
CE
= 5 V; I
C
= 10 mA
V
CE
= 5 V; I
C
= 10 mA; f = 100 MHz
V
CB
= 10 V; I
E
= i
e
= 0 A; f = 1 MHz
V
EB
= 0.5 V; I
C
= i
c
= 0 A; f = 1 MHz
I
C
= 200 μA; V
CE
= 5 V; R
S
= 2 kΩ; f =
1 kHz; B = 200Hz
[1] pulsed; t
p
≤ 300 μs; δ ≤ 0.02
[2] V
BE
decreases by approximately 2 mV/K with increasing temperature
BC847_SER
All information provided in this document is subject to legal disclaimers.
© Nexperia B.V. 2018. All rights reserved.
Product data sheet
Rev. 10 — 2 March 2017
5 / 16
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