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BAS16 RFG

Description
DIODE GEN PURP 75V 150MA SOT23
Categorysemiconductor    Discrete semiconductor   
File Size333KB,5 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

BAS16 RFG Overview

DIODE GEN PURP 75V 150MA SOT23

BAS16 RFG Parametric

Parameter NameAttribute value
Diode typestandard
Voltage - DC Reverse (Vr) (Maximum)75V
Current - average rectification (Io)150mA
Voltage at different If - Forward (Vf1.25V @ 150mA
speedSmall signal =< 200mA (Io), any speed
Reverse recovery time (trr)4ns
Current at different Vr - Reverse leakage current1µA @ 75V
Capacitance at different Vr, F2pF @ 0V,1MHz
Installation typesurface mount
Package/casingTO-236-3,SC-59,SOT-23-3
Supplier device packagingSOT-23
Operating Temperature - Junction-65°C ~ 150°C
BAS16
Taiwan Semiconductor
150mA, 75V Switching Diode
FEATURES
Low power loss, high efficiency
Ideal for automated placement
High surge current capability
Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
KEY PARAMETERS
PARAMETER
I
F(AV)
V
RRM
I
FSM
V
F
at I
F
=100mA
T
J MAX
Package
Configuration
VALUE
150
75
2
1.0
150
SOT-23
Single dice
UNIT
mA
V
A
V
°C
APPLICATIONS
● Switching mode power supply (SMPS)
MECHANICAL DATA
● Case: SOT-23
● Molding compound: UL flammability classification
rating 94V-0
● Moisture sensitivity level: level 1, per J-STD-020
● Packing code with suffix "G" means green compound
(halogen-free)
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 1A whisker test
● Weight: 8± 0.5 mg (approximately)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Marking code on the device
Repetitive peak reverse voltage
Forward current
Non-repetitive peak forward surge current @ t = 0.001 s
Junction temperature range
Storage temperature range
SYMBOL
V
RRM
I
F(AV)
I
FSM
T
J
T
STG
PART NUMBER
A6
75
150
2
-65 to +150
-65 to +150
V
mA
A
°C
°C
UNIT
THERMAL PERFORMANCE
PARAMETER
Junction-to-ambient thermal resistance
SYMBOL
R
ӨJA
LIMIT
375
UNIT
°C/W
1
Version:E1612

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