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BAS16WF

Description
DIODE GEN PURP 100V 175MA SOT323
Categorysemiconductor    Discrete semiconductor   
File Size768KB,21 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
Environmental Compliance
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BAS16WF Overview

DIODE GEN PURP 100V 175MA SOT323

BAS16WF Parametric

Parameter NameAttribute value
Diode typestandard
Voltage - DC Reverse (Vr) (Maximum)100V
Current - average rectification (Io)175mA(DC)
Voltage at different If - Forward (Vf1.25V @ 150mA
speedSmall signal =< 200mA (Io), any speed
Reverse recovery time (trr)4ns
Current at different Vr - Reverse leakage current500nA @ 80V
Capacitance at different Vr, F1.5pF @ 0V,1MHz
Installation typesurface mount
Package/casingSC-70,SOT-323
Supplier device packagingSOT-323-3
Operating Temperature - Junction150°C (maximum)
BAS16 series
High-speed switching diodes
Rev. 6 — 24 September 2014
Product data sheet
1. Product profile
1.1 General description
High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD)
plastic packages.
Table 1.
Product overview
Package
Nexperia
BAS16
BAS16H
BAS16J
BAS16L
BAS16T
BAS16VV
BAS16VY
BAS16W
BAS316
BAS516
SOT23
SOD123F
SOD323F
SOD882
SOT416
SOT666
SOT363
SOT323
SOD323
SOD523
JEITA
-
-
SC-90
-
SC-75
-
SC-88
SC-70
SC-76
SC-79
JEDEC
TO-236AB
-
-
-
-
-
-
-
-
-
single
single
single
single
single
triple isolated
triple isolated
single
single
single
Configuration
Package
configuration
small
small and flat lead
very small and flat
lead
leadless ultra
small
ultra small
ultra small and flat
lead
very small
very small
very small
ultra small and flat
lead
Type number
1.2 Features and benefits
High switching speed: t
rr
4 ns
Low leakage current
Repetitive peak reverse voltage:
V
RRM
100 V
AEC-Q101 qualified
Low capacitance
Reverse voltage: V
R
100 V
Small SMD plastic packages
1.3 Applications
High-speed switching
General-purpose switching

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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