Silicon Bipolar Low Noise
Microwave Transistors
Features
•
Low Noise Figure (.8dB Typical @ 60 MHz)
•
Large Dynamic Range (+25dBm @ 1Db Compression
Point)
•
Gold Metalization
•
Hermetic and Surface Mount Packages Available
•
Can be Screened to JANTX, JANTXV Equivalent Levels
•
Low 1/f Noise (1.0dB Typical @ 10 KHz)
MP42001
Case Styles
Description
This series of NPN silicon transistors is designed to
provide the low noise figure at frequencies from 10 to
1000 MHz. These transistors exhibit excellent noise
figure vs. current characteristics which results in
extremely low noise and wide dynamic range
performance. These transistors find wide application in
sophisticated radar and communications equipment at
VHF/UHF.
Micro-X
Applications
The MP42001 family of bipolar NPN transistors can be
used for low noise, high associated gain. large dynamic
range amplifiers up to approximately 1.0 GHz. These
transistors can also be used as preamplifier or driver
stages in the same frequency range.
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
1
Tel (408) 432-1480
Fax (408)) 432-3440
Silicon Bipolar High fT Low Noise Microwave Transistors
Absolute Maximum Ratings
MP42001 Series
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Junction Operating Temperature
Storage Temperature
Chip or Ceramic Packages
Plastic Packages
Total Power Dissipation at 25°C
509 Case Style
510 Case Style
35 Case Style
450 mW
1.2 W
750 mW
V
CBO
V
CEO
V
EBO
I
C
T
j
20 V
15 V
1.5 V
125 mA
200°C
-65°C to +200°C
-65°C to +125°C
MP42001 Series
Electrical Specifications @ 25°C
MP42001 Series
Parameter of Test
Gain Bandwidth Product
Insertion Power Gain
Condition
V
CE
= 10 volts
I
C
= 35 mA
V
CE
= 10 volts
I
C
= 28 mA
f = 100 MHz
f = 450 MHz
V
CE
= 10 volts
I
C
= 5 mA
f = 60 MHz
f = 450 GHz
V
CE
= 10 volts
I
C
= 5 mA
f = 60 MHz
V
CE
= 10 volts
I
C
= 10 mA
f = 60 MHz
f = 450 MHz
Symbol
f
T
|S
21E
|
2
Units
GHz
dB
30 typ
16 typ
NF
dB
1.2 typ
1.7 typ
GTU (max)
dB
30 typ
P
1dB
dBm
N/A
N/A
+5 typ
+2 typ
+7 typ
+4 typ
28 typ
28 typ
1.4 typ
1.9 typ
1.5 typ
2.3 typ
29 typ
14 min
26 typ
12 min
MP4200100
Chip
2.3 typ
MP4200135
Micro-X
1.5 typ
MP42001-509
TO-72
1.5 typ
Noise Figure
Unilateral Gain
Power Out at 1 dB
Compression
Z=50 Ohms
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
2
Tel (408) 432-1480
Fax (408)) 432-3440
Silicon Bipolar High fT Low Noise Microwave Transistors
Electrical Specifications @ 25°C
MP42001 Series
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Forward Current Gain
Collector-Base
Junction Capacitance
Condition
V
CB
= 10 volts
I
E
= 0
µA
V
EB
= 1 volt
I
C
= 0
µA
V
CE
= 8 volts
I
C
= 7 mA
V
CB
= 15 volts
f = 1 MHz
Symbol
I
CBO
I
EBO
h
FE
C
CB
Min
30
Typical
125
----
MP42001 Series
Max
10
1
250
1.7
1.3
1.2
Units
nA
µA
pF (509)
pF (510)
pF (511)
Typical Scattering Parameters in the TO-72 Can Package
MP42001-509, V
CE
= 10 Volts, I
C
= 5 mA
Frequency
(MHz)
110
200
300
400
500
600
700
800
900
1000
S11E
Mag.
0.667
0.551
0.496
0.475
0.466
0.467
0.470
0.474
0.469
0.464
Angle
-83
-116
-138
-155
-167
-178
174
167
161
153
Mag.
8.74
6.02
4.32
3.45
2.79
2.38
2.13
1.87
1.72
1.58
S21E
Angle
122.6
104.7
92.4
83.1
75.0
69.1
62.1
57.3
52.4
46.3
Mag.
0.040
0.054
0.064
0.070
0.080
0.088
0.098
0.114
0.127
0.145
S12E
Angle
48.9
45.7
48.1
50.9
55.8
59.9
63.3
65.4
67.1
70.0
Mag
0.765
0.649
0.597
0.578
0.570
0.551
0.528
0.511
0.506
0.503
S22E
Angle
-21.7
-25.8
-28.4
-30.7
-32.4
-35.6
-38.6
-44.3
-50.4
-56.4
MP42001-510, V
CE
= 10 Volts, I
C
= 60 mA
Frequency
(MHz)
100
200
300
400
500
600
700
800
900
1000
S11E
Mag.
0.76
0.80
0.81
0.82
0.84
0.82
0.82
0.85
0.92
0.83
Angle
-143
-164
-174
-178
178
174
172
168
172
162
Mag.
30.01
14.54
8.81
6.38
4.92
4.11
3.38
2.82
2.32
2.28
S21E
Angle
111
96
86
80
75
68
63
58
59
49
Mag.
0.01
0.01
0.02
0.02
0.02
0.03
0.03
0.03
0.03
0.04
S12E
Angle
45
43
46
50
56
59
63
61
64
64
Mag
0.49
0.34
0.32
0.31
0.31
0.32
0.32
0.33
0.34
0.35
S22E
Angle
-30
-22
-20
-21
-23
-26
-29
-33
-37
-40
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
3
Tel (408) 432-1480
Fax (408)) 432-3440
Silicon Bipolar High fT Low Noise Microwave Transistors
Performance Curves
MP42001 Series
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
4
Tel (408) 432-1480
Fax (408)) 432-3440
Silicon Bipolar High fT Low Noise Microwave Transistors
MP42001 Series
Case Styles
MP4200135
Micro-X
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
5
Tel (408) 432-1480
Fax (408)) 432-3440
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