52 standard frequencies between 3.57 MHz and 77.76 MHz
100% pin-to-pin drop-in replacement to quartz-based XO
Excellent total frequency stability as low as ±20 ppm
Operating temperature from -40°C to 85°C. For 125°C and/or
-55°C options, refer to
SiT1618, SiT8918, SiT8920
Low power consumption of 3.5 mA typical at 1.8V
Standby mode for longer battery life
Fast startup time of 5 ms
LVCMOS/HCMOS compatible output
Industry-standard packages: 2.0 x 1.6, 2.5 x 2.0, 3.2 x 2.5,
5.0 x 3.2, 7.0 x 5.0 mm x mm
Instant samples with
Time Machine II
and
Field Programmable
Oscillators
Ideal for DSC, DVC, DVR, IP CAM, Tablets, e-Books,
SSD, GPON, EPON, etc
Ideal for high-speed serial protocols such as: USB,
SATA, SAS, Firewire, 100M / 1G / 10G Ethernet, etc.
RoHS and REACH compliant, Pb-free, Halogen-free and
Antimony-free
For AEC-Q100 oscillators, refer to
SiT8924
and
SiT8925
Electrical Characteristics
All Min and Max limits are specified over temperature and rated operating voltage with 15 pF output load unless otherwise
stated. Typical values are at 25°C and nominal supply voltage.
Table 1. Electrical Characteristics
Parameters
Output Frequency Range
Symbol
f
Min.
Typ.
Max.
Unit
Condition
Refer to
Table 13
for the exact list of supported frequencies
Frequency Range
52 standard frequencies between
MHz
3.57 MHz and 77.76 MHz
-20
-25
-50
-20
-40
1.62
2.25
2.52
2.7
2.97
2.25
–
–
–
–
–
–
–
–
45
–
–
–
90%
Frequency Stability
F_stab
Frequency Stability and Aging
–
+20
ppm
Inclusive of initial tolerance at 25°C, 1st year aging at 25°C,
and variations over operating temperature, rated power
–
+25
ppm
supply voltage and load.
–
+50
ppm
Operating Temperature Range
–
+70
°C
Extended Commercial
–
+85
°C
Industrial
Supply Voltage and Current Consumption
1.8
1.98
V
Contact
SiTime
for 1.5V support
2.5
2.75
V
2.8
3.08
V
3.0
3.3
V
3.3
3.63
V
–
3.63
V
3.8
4.5
mA
No load condition, f = 20 MHz, Vdd = 2.8V to 3.3V
3.7
4.2
mA
No load condition, f = 20 MHz, Vdd = 2.5V
3.5
4.1
mA
No load condition, f = 20 MHz, Vdd = 1.8V
–
4.2
mA
Vdd = 2.5V to 3.3V, OE = GND, Output in high-Z state
–
4.0
mA
Vdd = 1.8 V. OE = GND, Output in high-Z state
2.6
4.3
ST = GND, Vdd = 2.8V to 3.3V, Output is weakly pulled down
̅ ̅̅
A
1.4
2.5
ST = GND, Vdd = 2.5V, Output is weakly pulled down
̅ ̅̅
A
0.6
1.3
ST = GND, Vdd = 1.8V, Output is weakly pulled down
̅ ̅̅
A
LVCMOS Output Characteristics
–
1
1.3
–
–
55
2
2.5
2
–
%
ns
ns
ns
Vdd
All Vdds. See Duty Cycle definition in
Figure 3
and
Footnote 6
Vdd = 2.5V, 2.8V, 3.0V or 3.3V, 20% - 80%
Vdd =1.8V, 20% - 80%
Vdd = 2.25V - 3.63V, 20% - 80%
IOH = -4 mA (Vdd = 3.0V or 3.3V)
IOH = -3 mA (Vdd = 2.8V and Vdd = 2.5V)
IOH = -2 mA (Vdd = 1.8V)
IOL = 4 mA (Vdd = 3.0V or 3.3V)
IOL = 3 mA (Vdd = 2.8V and Vdd = 2.5V)
IOL = 2 mA (Vdd = 1.8V)
Operating Temperature Range
T_use
Supply Voltage
Vdd
Current Consumption
Idd
OE Disable Current
Standby Current
I_OD
I_std
Duty Cycle
Rise/Fall Time
DC
Tr, Tf
Output High Voltage
VOH
Output Low Voltage
VOL
–
–
10%
Vdd
Rev 1.04
January 30, 2018
www.sitime.com
SiT1602B
Low Power, Standard Frequency Oscillator
Table 1. Electrical Characteristics (continued)
Parameters
Symbol
Min.
Typ.
–
–
87
–
–
–
–
1.8
1.8
12
14
0.5
1.3
Max.
–
30%
150
–
Unit
Pin 1, OE or ST
̅ ̅̅
Pin 1, OE or ST
̅ ̅̅
Pin 1, OE logic high or logic low, or ST logic high
̅ ̅̅
Pin 1, ST logic low
̅ ̅̅
Condition
Input Characteristics
Input High Voltage
Input Low Voltage
Input Pull-up Impedance
VIH
VIL
Z_in
70%
–
50
2
Startup Time
Enable/Disable Time
Resume Time
RMS Period Jitter
Peak-to-peak Period Jitter
RMS Phase Jitter (random)
–
–
–
–
–
T_pk
T_phj
–
–
–
–
Vdd
Vdd
k
M
ms
ns
ms
ps
ps
ps
ps
ps
ps
Startup and Resume Timing
T_start
T_oe
T_resume
T_jitt
5
138
5
Jitter
3
3
25
30
0.9
2
f = 75 MHz, Vdd = 2.5V, 2.8V, 3.0V or 3.3V
f = 75 MHz, Vdd = 1.8V
f = 75 MHz, Vdd = 2.5V, 2.8V, 3.0V or 3.3V
f = 75 MHz, Vdd = 1.8V
f = 75 MHz, Integration bandwidth = 900 kHz to 7.5 MHz
f = 75 MHz, Integration bandwidth = 12 kHz to 20 MHz
Measured from the time Vdd reaches its rated minimum value
f = 77.76 MHz. For other frequencies, T_oe = 100 ns + 3 *
cycles
Measured from the time ST pin crosses 50% threshold
̅ ̅̅
Table 2. Pin Description
Pin
Symbol
[1]
Functionality
Output Enable
H : specified frequency output
L: output is high impedance. Only output driver is disabled.
H : specified frequency output
L: output is low (weak pull down). Device goes to sleep mode. Supply
current reduces to I_std.
Any voltage between 0 and Vdd or Open : Specified frequency
output. Pin 1 has no function.
Electrical ground
Oscillator output
Power supply voltage
[2]
[1]
[1]
Top View
OE/ST/NC
VDD
1
OE/ST /NC
̅ ̅̅
Standby
No Connect
2
3
4
GND
OUT
VDD
Power
Output
Power
GND
OUT
Figure 1. Pin Assignments
Notes:
1. In OE or ST mode, a pull-up resistor of 10 kΩ or less is recommended if pin 1 is not externally driven. If pin 1 needs to be left floating, use the NC option.
̅ ̅̅
2. A capacitor of value 0.1 µF or higher between Vdd and GND is required.
Rev 1.04
Page 2 of 17
www.sitime.com
SiT1602B
Low Power, Standard Frequency Oscillator
Table 3. Absolute Maximum Limits
Attempted operation outside the absolute maximum ratings may cause permanent damage to the part. Actual performance
of the IC is only guaranteed within the operational specifications, not at absolute maximum rat ings.
Parameter
Storage Temperature
Vdd
Electrostatic Discharge
Soldering Temperature (follow standard Pb free
soldering guidelines)
Junction Temperature
[3]
Min.
-65
-0.5
–
–
–
Max.
150
4
2000
260
150
Unit
°C
V
V
°C
°C
Note:
3. Exceeding this temperature for extended period of time may damage the device.
Table 4. Thermal Consideration
[4]
Package
7050
5032
3225
2520
2016
Note:
4. Refer to JESD51 for
JA
and
JC
definitions, and reference layout used to determine the
JA
and
JC
values in the above table.
JA, 4 Layer Board
(°C/W)
142
97
109
117
152
JA, 2 Layer Board
(°C/W)
273
199
212
222
252
JC, Bottom
(°C/W)
30
24
27
26
36
Table 5. Maximum Operating Junction Temperature
[5]
Max Operating Temperature (ambient)
70°C
85°C
Maximum Operating Junction Temperature
80°C
95°C
Note:
5. Datasheet specifications are not guaranteed if junction temperature exceeds the maximum operating junction temperature.
Table 6. Environmental Compliance
Parameter
Mechanical Shock
Mechanical Vibration
Temperature Cycle
Solderability
Moisture Sensitivity Level
Condition/Test Method
MIL-STD-883F, Method 2002
MIL-STD-883F, Method 2007
JESD22, Method A104
MIL-STD-883F, Method 2003
MSL1 @ 260°C
Rev 1.04
Page 3 of 17
www.sitime.com
SiT1602B
Low Power, Standard Frequency Oscillator
Test Circuit and Waveform
[6]
Vdd
Vout
Test Point
tr
80% Vdd
tf
4
Power
Supply
0.1 uF
1
3
2
15pF
(including probe
and fixture
capacitance)
50%
20% Vdd
High Pulse
(TH)
Period
Low Pulse
(TL)
Vdd
OE/ST Function
1 kΩ
Figure 2. Test Circuit
Note:
6. Duty Cycle is computed as Duty Cycle = TH/Period.
Figure 3. Waveform
Timing Diagrams
90% Vdd
Vdd
Vdd
50% Vdd
[7]
Pin 4 Voltage
T_start
No Glitch
during start up
ST Voltage
T_resume
CLK Output
HZ
T_start: Time to start from power-off
CLK Output
HZ
T_resume: Time to resume from ST
Figure 4. Startup Timing (OE/ ST̅ Mode)
̅ ̅
Figure 5. Standby Resume Timing ( ST̅ Mode Only)
̅ ̅
Vdd
50% Vdd
OE Voltage
T_oe
Vdd
OE Voltage
50% Vdd
T_oe
CLK Output
HZ
T_oe: Time to re-enable the clock output
CLK Output
HZ
T_oe: Time to put the output in High Z mode
Figure 6. OE Enable Timing (OE Mode Only)
Figure 7. OE Disable Timing (OE Mode Only)
Note:
7. SiT1602 has “no runt” pulses and “no glitch” output during startup or resume.
I am looking at the RM0033 data sheet, which is a unified introduction of 205, 207, 215, and 217. It says that there is a CRYP peripheral. However, when I used the library function to perform DES encr...
This file system does not support long file names, because the UICODE encoded file is too large to fit. Due to the limited IO ports, even the JTAG port is used as an IO port, and SPI FLASH cannot be a...
I remember that not long ago, the administrator shared with everyone: China has built more than 910,000 5G base stations, accounting for 70% of the world . Today, I saw the news that China has now bui...
I talked about Xiaonian with my colleagues this morning. I only remember that in Northeast China, today is to commemorate the Kitchen God's ascension to heaven, sweep the house and eat kitchen sugar (...
At present, the development of wireless power supply technology for electric vehicles (EVs) is becoming more and more active. In 2012, Volvo of Sweden established Volvo Technology Japan in Tokyo as...[Details]
Microcontrollers (MCUs), which are widely used in automotive electronics, are rapidly facing time and cost pressures. The main advantage of using MCUs has always been to create high-level system in...[Details]
Remote keyless entry (RKE) systems have become popular with users, with more than 80% of new cars in North America and more than 70% in Europe equipped with RKE systems. In addition to the obvious ...[Details]
Automotive applications are particularly sensitive to EMI events, which are unavoidable in a noisy electrical environment consisting of a central battery, bundled wiring harnesses, various inductiv...[Details]
The Mobile Industry Processor Interface (MIPI) Alliance is an organization responsible for promoting the standardization of software and hardware in mobile devices. It has released the D-PHY specif...[Details]
In order to highlight the concept of "energy saving and environmental protection" of intelligent buildings, solar street lights are designed for intelligent communities. The inclination and capacit...[Details]
In recent years, lighting has become an important area that countries around the world are targeting to promote energy conservation and environmental protection. According to statistics, about 20% ...[Details]
With the continuous improvement of the requirements of intelligent building security systems and the continuous improvement of people's safety awareness, indoor anti-theft has gradually attracted peop...[Details]
1 Introduction
As an emerging microfabrication technology, micro-electromechanical system (MEMS) technology has begun to be applied in various fields. It can integrate functions such as inform...[Details]
1 Introduction
Ultrasonic waves have strong directivity, slow energy consumption, and can propagate over long distances in a medium, so they are used for distance measurement. Ultrasonic detec...[Details]
Although it is relatively easy to check the stability of a simple amplifier at lower frequencies, it may be much more difficult to evaluate the stability of a more complex circuit. This artic...[Details]
1. Background:
The instrument system parameter detection and control of the chemical production workshop of Tangshan Coal Gas Coking Plant are all analog instruments, some of which are eve...[Details]
Flooded Batteries
This battery developed in Germany can be used to power flashlights, strobe lights and toys as long as it is filled with water. This battery can be stored for 50 years and can...[Details]
Introduction
Liquid crystal, as a display device, is widely used in low-power products such as instruments, meters, and electronic equipment with its unique advantages. In the past, the displ...[Details]