This product complies with the RoHS Directive (EU 2002/95/EC).
Powor Transistors
2SD1645
Silicon NPN epitaxial planar type darlington
For low frequency amplification
Features
Built-in zener diode (60 V) between collector-base and collector-emitter
Small variation in withstand pressure
Darlington connection
Extremely satisfactory linearity of the forward current transfer ratio h
FE
Package
Code
TO-126B-A1
Name
Pin
1. Emitter
2. Collector
3. Base
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
T
stg
–55 to +150
Note) *: With a 100 mm
×
100 mm
×
2 mm Al heat sink at T
a
= 25°C
/D
Collector-emitter voltage (Base open)
isc
Collector-base voltage (Emitter open)
tin
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
h
FE *2
V
CE(sat)
V
BE(sat)
f
T
ue
Electrical Characteristics
T
a
= 25°C±3°C
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Rating
60±10
5
60±10
1.0
1.5
1.2
Unit
V
V
V
M
ain
Di
sc te
on na
tin nc
ue e/
d
Absolute Maximum Ratings
T
a
= 25°C
A
A
B
Internal Connection
C
E
5.0
*
150
W
°C
°C
di
Conditions
Min
50
50
5
Typ
Max
70
70
1
Unit
V
V
V
mA
mA
V
V
MHz
I
C
= 100
mA,
I
E
= 0
I
C
= 1 mA, I
B
= 0
on
an
ce
Emitter-base voltage (Collector open)
I
E
= 100
mA,
I
C
= 0
V
CB
= 25 V, I
E
= 0
V
EB
= 4 V, I
C
= 0
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
*1
Collector-emitter saturation voltage
*1
Base-emitter saturation voltage
*1
Transition frequency
2. *1: Pulse measurement
*2: Rank classification
Rank
h
FE
Q
Ma
int
en
Collector-base cutoff current (Emitter open)
1
V
CE
= 10 V, I
C
= 1.0 A
4 000
40 000
1.8
2.2
Pl
I
C
= 1.0 A, I
B
= 1.0 mA
I
C
= 1.0 A, I
B
= 1.0 mA
V
CB
= 10 V, I
E
= –50 mA, f = 200 MHz
150
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
R
8 000 to 12 000
S
16 000 to 40 000
4 000 to 10 000
Publication date : October 2008
SJD00349AED
1
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semiconductors described in this book
(1)
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other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any
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Consult our sales staff in advance for information on the following applications:
–
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
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–
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(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
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(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company.
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Test/Measurement
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