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MS2200

Description
TRANS RF BIPO 1167W 43.2A MS102
CategoryDiscrete semiconductor    The transistor   
File Size196KB,6 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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MS2200 Overview

TRANS RF BIPO 1167W 43.2A MS102

MS2200 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerMicrosemi
package instruction0.400 X 0.500 INCH, HERMETIC SEALED, M102, 4 PIN
Contacts4
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Shell connectionBASE
Maximum collector current (IC)43.2 A
ConfigurationSINGLE
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-CDFM-F4
JESD-609 codee0
Number of components1
Number of terminals4
Maximum operating temperature200 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MS2200
RF AND MICROWAVE TRANSISTORS
UHF PULSED APPLICATIONS
Features
500 Watts @ 250
µSec
Pulse Width, 10% Duty Cycle
Refractory Gold Metallization
Emitter Ballasting And Low Resistance For Reliability
and Ruggedness
Infinite VSWR Capability At Specified Operating
Conditions
Input Matched, Common Base Configuration
Balanced Configuration
DESCRIPTION:
The MS2200 is a hermetically sealed, gold metallized silicon NPN
pulse power transistor mounted in a common base balanced
configuration. The MS2200 is designed for applications requiring
high peak power and low duty cycles within the frequency range of
400 – 500 MHz.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
Value
Unit
V
CBO
V
CES
V
EBO
I
C
P
DISS
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
Storage Temperature
65
65
3.5
43.2
1167
+200
-65 to +150
V
V
V
A
W
°
C
°
C
Thermal Data
R
TH(j-c)
Junction-Case Thermal Resistance
0.15
°
C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at
WWW.ADVANCEDPOWER.COM
or contact our factory direct.
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