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MS2212

Description
RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN, 0.310 X 0.310 INCH, HERMETIC SEALED, M222, 2 PIN
CategoryDiscrete semiconductor    The transistor   
File Size185KB,5 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

MS2212 Overview

RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN, 0.310 X 0.310 INCH, HERMETIC SEALED, M222, 2 PIN

MS2212 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Objectid2121121301
package instruction0.310 X 0.310 INCH, HERMETIC SEALED, M222, 2 PIN
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Shell connectionBASE
Maximum collector current (IC)1.8 A
ConfigurationSINGLE
Minimum DC current gain (hFE)15
highest frequency bandL BAND
JESD-30 codeS-CDFM-F2
JESD-609 codee0
Number of components1
Number of terminals2
Maximum operating temperature250 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeSQUARE
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power dissipation(Abs)50 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formFLAT
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MS2212
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
Features
960-1215 MHz
GOLD METALLIZATION
EMITTER SITE BALLASTED
Pout = 15W
Gp = 8.1 dB MINIMUM
INTERNAL IMPEDANCE MATCHING
INFINITE VSWR CAPABILITY @ RATED CONDITIONS
COMMON BASE CONFIGURATION
DESCRIPTION:
The MS2212 is designed for specialized avionics applications, such
as JTIDS, where maximum performance is required under a variety of
pulse formats. Internal impedance matching provides superior broad
band performance.
The MS2212 utilizes gold metallization and emitter ballasting to
provide superior reliability and consistent performance under the
most rugged pulse conditions.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CC
I
C
P
DISS
T
J
T
STG
(Tcase = 25° C)
°
Value
32
1.8
50
+250
- 65 to + 200
Parameter
Collector-Supply Voltage*
Device Current*
Power Dissipation*
Junction Temperature
Storage Temperature
Unit
V
A
W
°
C
°
C
Thermal Data
R
TH(j-c)
Junction-Case Thermal Resistance*
3.0
°
C/W
* Applies only to rated RF operation.
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at
WWW.ADVANCEDPOWER.COM
or contact our factory direct.

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