BSS84PW
SIPMOS
®
Small-Signal-Transistor
Features
·
P-Channel
·
Product Summary
Drain source voltage
Drain-source on-state resistance
Continuous drain current
V
DS
R
DS(on)
I
D
3
-60
8
-0.15
V
W
Enhancement mode
·
Avalanche rated
·
Logic Level
·
dv/dt rated
A
•
Qualified according to AEC Q101
•
Halogen-free according to IEC61249-2-21
2
1
VSO05561
Type
BSS84PW
Package
Tape and Reel
Marking
YBs
Pin 1
G
PIN 2
S
PIN 3
D
PG-SOT-323 L6327:3000pcs/r.
Maximum Ratings,at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
Value
-0.15
-0.6
2.61
0.03
6
Unit
A
I
D
I
D puls
E
AS
E
AR
dv/dt
T
A
= 25 °C
Pulsed drain current
T
A
= 25 °C
Avalanche energy, single pulse
mJ
I
D
= -0.15 A ,
V
DD
= -25 V,
R
GS
= 25
W
Avalanche energy, periodic limited by
T
jmax
Reverse diode dv/dt
kV/μs
I
S
= -0.15 A,
V
DS
= -48 V, di/dt = 200 A/μs,
T
jmax
= 150 °C
Gate source voltage
Power dissipation
V
GS
P
tot
T
j ,
T
stg
±20
0.3
-55...+150
55/150/56
V
W
°C
T
A
= 25 °C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Rev 1.4
Page 1
2011-07-13
BSS84PW
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - soldering point
(Pin 3)
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
Symbol
min.
Values
typ.
-
max.
110
K/W
Unit
R
thJS
R
thJA
-
-
-
-
-
420
350
Electrical Characteristics,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Static Characteristics
Drain-source breakdown voltage
Symbol
min.
Values
typ.
-
-1.5
max.
-
-2
μA
-
-
-0.1
-10
-10
10.5
6.9
4.6
-1
-100
-100
25
12
8
nA
V
Unit
V
(BR)DSS
V
GS(th)
I
DSS
-60
-1
V
GS
= 0 V,
I
D
= -250
μA
Gate threshold voltage,
V
GS
=
V
DS
I
D
= -20
μA
Zero gate voltage drain current
V
DS
= -60 V,
V
GS
= 0 V,
T
j
= 25 °C
V
DS
= -60 V,
V
GS
= 0 V,
T
j
= 125 °C
Gate-source leakage current
I
GSS
R
DS(on)
R
DS(on)
R
DS(on)
-
-
-
-
V
GS
= -20 V,
V
DS
= 0 V
Drain-source on-state resistance
W
V
GS
= -2.7 V,
I
D
= -0.01 A
Drain-source on-state resistance
V
GS
= -4.5 V,
I
D
= -0.12 A
Drain-source on-state resistance
V
GS
= -10 V,
I
D
= -0.15 A
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70
μm
thick) copper area for drain
connection. PCB is vertical without blown air.
Rev 1.4
Page 2
2011-07-13
BSS84PW
Electrical Characteristics,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Dynamic Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
Conditions
min.
Values
typ.
0.16
15.3
5.8
3
6.7
16.2
8.6
20.5
max.
-
19.1
7.3
3.8
10
24.3
12.9
30.8
ns
S
pF
Unit
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DS
£
2*I
D
*R
DS(on)max
,
I
D
=0.15A
V
GS
=0V,
V
DS
=-25V,
f=1MHz
0.08
-
-
-
-
-
-
-
V
DD
=-30V,
V
GS
=-4.5V,
I
D
=-0.12A,
R
G
=25
W
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Inverse diode continuous
forward current
Inverse diode direct current,
pulsed
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
Q
gs
Q
gd
Q
g
V
DD
=-48V,
I
D
=-0.15A
V
DD
=-48V,
I
D
=-0.15A,
V
GS
=0 to -10V
-
-
-
-
0.25
0.3
1
-3.4
0.38
0.45
1.5
-
nC
V
(plateau)
V
DD
=-48V,
I
D
=-0.15A
I
S
I
SM
V
SD
t
rr
Q
rr
V
GS
=0V,
I
F
=-0.15A
V
R
=-30V,
I
F=
l
S
,
di
F
/dt=100A/μs
V
T
A
=25°C
-
-
-
-
-
-
-
-0.84
23.6
11.6
-0.15 A
-0.6
-1.12 V
35.4
17.4
ns
nC
Rev 1.4
Page 3
2011-07-13
BSS84PW
Power Dissipation
Drain current
P
tot
=
f
(T
A
)
BSS84PW
I
D
=
f
(T
A
)
parameter:
V
GS
³
10 V
BSS84PW
0.32
-0.16
W
A
0.24
-0.12
P
tot
0.16
I
D
°C
0.20
-0.10
-0.08
0.12
-0.06
0.08
-0.04
0.04
-0.02
0.00
0
20
40
60
80
100
120
160
0.00
0
20
40
60
80
100
120
°C
160
T
A
T
A
Safe operating area
Transient thermal impedance
I
D
=
f
(
V
DS
)
parameter :
D
= 0 ,
T
A
= 25 °C
-10
1
BSS84PW
Z
thJA
=
f
(t
p
)
parameter :
D
=
t
p
/T
10
3
BSS84PW
A
K/W
-10
0
tp
= 40.0μs
100
μs
/I
D
-10
-1
R
D
S
n
(o
)
=
V
D
S
1 ms
10 ms
Z
thJC
10
2
I
D
D = 0.50
0.20
10
1
0.10
0.05
0.02
single pulse
0.01
-10
-2
DC
-10
-3 -1
-10
-10
0
-10
1
V
-10
2
10
0 -5
-4
-3
-2
-1
0
10
10
10
10
10
10
10
1
s
10
3
V
DS
Rev 1.4
Page 4
t
p
2011-07-13
BSS84PW
Typ. output characteristic
Typ. drain-source-on-resistance
I
D
=
f
(V
DS
);
T
j
=25°C
parameter:
t
p
= 80
μs
BSS84PW
R
DS(on)
=
f
(I
D
)
parameter:
V
GS
BSS84PW
-0.36
P
tot
= 0W
g f
VGS
[V]
a
-2.5
b
-3.0
-3.5
-4.0
-4.5
-5.0
-6.0
A
-0.28
W
e
26
a
b
c
d
22
20
d
c
d
e
f
g
R
DS(on)
-0.24
18
16
14
12
10
I
D
-0.20
-0.16
-0.12
-0.08
-0.04
a
b
c
8
6
4
2
-5.0
V
GS
[V] =
a
b
c
d
e
f
-2.5 -3.0 -3.5 -4.0 -4.5 -5.0
g
-6.0
e
g
f
0.00
0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0
V
0
0.00 -0.04 -0.08 -0.12 -0.16 -0.20 -0.24
A
-0.30
V
DS
I
D
Typ. transfer characteristics
I
D
=
f
(
V
GS
)
Typ. forward transconductance
V
DS
³
2 x
I
D
x
R
DS(on)max
parameter:
t
p
= 80
μs
-0.30
g
fs
= f(I
D
);
T
j
=25°C
parameter:
g
fs
0.22
S
A
0.18
0.16
g
fs
V
-5.0
V
GS
I
D
-0.20
0.14
0.12
-0.15
0.10
-0.10
0.08
0.06
-0.05
0.04
0.02
0.00
0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0
0.00
0.00 -0.05 -0.10 -0.15 -0.20 -0.25 -0.30
A
-0.40
I
D
Rev 1.4
Page 5
2011-07-13
京公网安备 11010802033920号
EEWORLD
