HYS72V32200GU-8A datasheet, PDF

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HYS72V32200GU-8A: DescriptionSynchronous DRAM Module, 32MX72, 6ns, CMOS, DIMM-168; Categorystorage; File Size114KB，15 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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HYS72V32200GU-8A Overview

Synchronous DRAM Module, 32MX72, 6ns, CMOS, DIMM-168

HYS72V32200GU-8A Parametric

Parameter Name	Attribute value
Maker	Infineon
Parts packaging code	DIMM
package instruction	DIMM, DIMM168
Contacts	168
Reach Compliance Code	unknown
ECCN code	EAR99
Is Samacsys	N
access mode	SINGLE BANK PAGE BURST
Maximum access time	6 ns
Maximum clock frequency (fCLK)	100 MHz
I/O type	COMMON
JESD-30 code	R-XDMA-N168
memory density	2415919104 bit
Memory IC Type	SYNCHRONOUS DRAM MODULE
memory width	72
Number of functions	1
Number of ports	1
Number of terminals	168
word count	33554432 words
character code	32000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	32MX72
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	DIMM
Encapsulate equivalent code	DIMM168
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	8192
Maximum standby current	0.002 A
Maximum slew rate	0.24 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal pitch	1.27 mm
Terminal location	DUAL
Base Number Matches	1

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3.3V 32M x 64/72-Bit SDRAM Modules

3.3V 64M x 64/72-Bit SDRAM Modules

PC100-168 pin unbuffered DIMM Modules

HYS64/72V32200GU

HYS64/72V64220GU

•

168 Pin unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications

One bank 32M x 64 and 32M x 72 organisation

Two bank 64M x 64 and 64M x 72 organisation

Optimized for byte-write non-parity or ECC applications

Fully PC board layout compatible to INTEL’s Rev. 1.0 module specification

JEDEC standard Synchronous DRAMs (SDRAM)

SDRAM Performance:

-8

Clock frequency (max.)

Clock access time

100

-8A

100

-8B

100

Units

MHz

•

Programmed Latencies :

Product Speed

-8

-8A

-8B

PC100

tRCD

tRP

•

Single +3.3V(± 0.3V ) power supply

Programmable CAS Latency, Burst Length and Wrap Sequence

(Sequential & Interleave)

Auto Refresh (CBR) and Self Refresh

Decoupling capacitors mounted on substrate

All inputs, outputs are LVTTL compatible

Serial Presence Detect with E

PROM

Uses SIEMENS 256Mbit SDRAM components in 32M x 8 organisation and TSOPII-54 packages

Gold contact pad

Card Size: 133,35 mm x 31.75 mm x 4,00 mm

•

INFINEON Technologies

4.99

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Description	Synchronous DRAM Module, 32MX72, 6ns, CMOS, DIMM-168	Synchronous DRAM Module, 32MX72, 6ns, CMOS, DIMM-168	Synchronous DRAM Module, 64MX72, 6ns, CMOS, DIMM-168	Synchronous DRAM Module, 32MX64, 6ns, CMOS, DIMM-168	Synchronous DRAM Module, 32MX64, 6ns, CMOS, DIMM-168	Synchronous DRAM Module, 32MX64, 6ns, CMOS, DIMM-168	Synchronous DRAM Module, 64MX64, 6ns, CMOS, DIMM-168	Synchronous DRAM Module, 32MX72, 6ns, CMOS, DIMM-168	Synchronous DRAM Module, 64MX72, 6ns, CMOS, DIMM-168	Synchronous DRAM Module, 64MX64, 6ns, CMOS, DIMM-168
Maker	Infineon	Infineon	Infineon	Infineon	Infineon	Infineon	Infineon	Infineon	Infineon	Infineon
Parts packaging code	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM
package instruction	DIMM, DIMM168	DIMM, DIMM168	DIMM, DIMM168	DIMM, DIMM168	DIMM, DIMM168	DIMM, DIMM168	DIMM, DIMM168	DIMM, DIMM168	DIMM, DIMM168	DIMM, DIMM168
Contacts	168	168	168	168	168	168	168	168	168	168
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
access mode	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	DUAL BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	DUAL BANK PAGE BURST	SINGLE BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST
Maximum access time	6 ns	6 ns	6 ns	6 ns	6 ns	6 ns	6 ns	6 ns	6 ns	6 ns
Maximum clock frequency (fCLK)	100 MHz	100 MHz	100 MHz	100 MHz	100 MHz	100 MHz	100 MHz	100 MHz	100 MHz	100 MHz
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-XDMA-N168	R-XDMA-N168	R-XDMA-N168	R-XDMA-N168	R-XDMA-N168	R-XDMA-N168	R-XDMA-N168	R-XDMA-N168	R-XDMA-N168	R-XDMA-N168
memory density	2415919104 bit	2415919104 bit	4831838208 bit	2147483648 bit	2147483648 bit	2147483648 bit	4294967296 bit	2415919104 bit	4831838208 bit	4294967296 bi
Memory IC Type	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE
memory width	72	72	72	64	64	64	64	72	72	64
Number of functions	1	1	1	1	1	1	1	1	1	1
Number of ports	1	1	1	1	1	1	1	1	1	1
Number of terminals	168	168	168	168	168	168	168	168	168	168
word count	33554432 words	33554432 words	67108864 words	33554432 words	33554432 words	33554432 words	67108864 words	33554432 words	67108864 words	67108864 words
character code	32000000	32000000	64000000	32000000	32000000	32000000	64000000	32000000	64000000	64000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
organize	32MX72	32MX72	64MX72	32MX64	32MX64	32MX64	64MX64	32MX72	64MX72	64MX64
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
encapsulated code	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM
Encapsulate equivalent code	DIMM168	DIMM168	DIMM168	DIMM168	DIMM168	DIMM168	DIMM168	DIMM168	DIMM168	DIMM168
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
power supply	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	8192	8192	8192	8192	8192	8192	8192	8192	8192	8192
Maximum standby current	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A
Maximum slew rate	0.24 mA	0.195 mA	0.21 mA	0.24 mA	0.24 mA	0.195 mA	0.21 mA	0.24 mA	0.21 mA	0.21 mA
Maximum supply voltage (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
Minimum supply voltage (Vsup)	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
surface mount	NO	NO	NO	NO	NO	NO	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal pitch	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL

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