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Datasheet> All Categories > storage> GS74116AGJ-6IT
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GS74116AGJ-6IT

Description
Standard SRAM, 256KX16, 6ns, CMOS, PDSO44, 0.400 INCH, SOJ-44
Categorystorage   
File Size451KB，15 Pages
ManufacturerGSI Technology
Websitehttp://www.gsitechnology.com/
Environmental Compliance
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GS74116AGJ-6IT Overview

Standard SRAM, 256KX16, 6ns, CMOS, PDSO44, 0.400 INCH, SOJ-44

GS74116AGJ-6IT Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerGSI Technology
Parts packaging codeSOJ
package instructionSOJ,
Contacts44
Reach Compliance Codecompliant
ECCN code3A991.B.2.B
Is SamacsysN
Maximum access time6 ns
JESD-30 codeR-PDSO-J44
JESD-609 codee3
length28.58 mm
memory density4194304 bit
Memory IC TypeSTANDARD SRAM
memory width16
Humidity sensitivity level3
Number of functions1
Number of terminals44
word count262144 words
character code256000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize256KX16
Package body materialPLASTIC/EPOXY
encapsulated codeSOJ
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum seat height3.76 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3.135 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfacePURE MATTE TIN
Terminal formJ BEND
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width10.16 mm
Base Number Matches1

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Download Datasheet
GS74116ATP/J/X
SOJ, TSOP, FP-BGA
Commercial Temp
Industrial Temp
Features
• Fast access time: 6, 7, 8, 10, 12 ns
• CMOS low power operation: 170/150/130/105/95 mA at
minimum cycle time
• Single 3.3 V power supply
• All inputs and outputs are TTL-compatible
• Byte control
• Fully static operation
• Industrial Temperature Option: –40° to 85°C
• Package line up
J: 400 mil, 44-pin SOJ package
TP: 400 mil, 44-pin TSOP Type II package
X: 6 mm x 10 mm Fine Pitch Ball Grid Array
package
256K x 16
4Mb Asynchronous SRAM
A
4
A
3
A
2
A
1
A
0
CE
DQ
1
DQ
2
DQ
3
DQ
4
V
DD
V
SS
DQ
5
DQ6
DQ7
DQ
8
WE
A
15
A
14
A
13
A
12
A
16
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
6, 7, 8, 10, 12 ns
3.3 V V
DD
Center V
DD
and V
SS
SOJ 256K x 16-Pin Configuration (Package J)
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A
5
A
6
A
7
OE
UB
LB
DQ
16
DQ
15
DQ
14
DQ
13
V
SS
V
DD
DQ
12
DQ
11
DQ
10
DQ
9
NC
A
8
A
9
A
10
A
11
A
17
Top view
44-pin
SOJ
Description
The GS74116A is a high speed CMOS Static RAM organized
as 262,144 words by 16 bits. Static design eliminates the need
for external clocks or timing strobes. The GS operates on a
single 3.3 V power supply and all inputs and outputs are TTL-
compatible. The GS74116A is available in a 6 x 10 mm Fine
Pitch BGA package, 400 mil SOJ and 400 mil TSOP Type-II
packages.
Pin Descriptions
Symbol
A
0
–A
17
DQ
1
–DQ
16
CE
LB
UB
WE
OE
V
DD
V
SS
NC
FP-BGA 256K x 16 Bump Configuration (Package X)
Description
Address input
Data input/output
Chip enable input
Lower byte enable input
(DQ1 to DQ8)
Upper byte enable input
(DQ9 to DQ16)
Write enable input
Output enable input
+3.3 V power supply
Ground
No connect
6 x 10 mm Bump Pitch
A
B
C
D
E
F
G
H
LB
DQ
16
OE
UB
A
0
A
3
A
5
A
17
NC
A
8
A
10
A
13
A
1
A
4
A
6
A
7
A
16
A
9
A
11
A
14
A
2
CE
DQ
2
DQ
4
DQ
5
DQ
7
WE
A
15
NC
DQ
1
DQ
3
V
DD
V
SS
DQ
6
DQ
8
NC
1
2
3
4
5
6
DQ
14
DQ
15
V
SS
V
DD
DQ
13
DQ
12
DQ
11
DQ
10
DQ
9
NC
NC
A
12
Rev: 1.02 3/2002
1/15
© 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

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