100mA, 32V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-18, TO-18, 3 PIN
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Maker | Central Semiconductor |
| Parts packaging code | BCY |
| package instruction | CYLINDRICAL, O-MBCY-W3 |
| Contacts | 3 |
| Reach Compliance Code | compliant |
| Is Samacsys | N |
| Maximum collector current (IC) | 0.1 A |
| Collector-emitter maximum voltage | 32 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 60 |
| JEDEC-95 code | TO-18 |
| JESD-30 code | O-MBCY-W3 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 200 °C |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | CYLINDRICAL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | NPN |
| Maximum power dissipation(Abs) | 0.6 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | TIN LEAD |
| Terminal form | WIRE |
| Terminal location | BOTTOM |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 150 MHz |
| Maximum off time (toff) | 800 ns |
| Maximum opening time (tons) | 150 ns |
| Base Number Matches | 1 |
| BCY58IX | BCY59IX | BCY58 | |
|---|---|---|---|
| Description | 100mA, 32V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-18, TO-18, 3 PIN | 100mA, 45V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-18, TO-18, 3 PIN | Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, TO-18, 3 PIN |
| Is it lead-free? | Contains lead | Contains lead | Contains lead |
| Is it Rohs certified? | incompatible | incompatible | incompatible |
| Parts packaging code | BCY | BCY | BCY |
| package instruction | CYLINDRICAL, O-MBCY-W3 | TO-18, 3 PIN | TO-18, 3 PIN |
| Contacts | 3 | 3 | 3 |
| Reach Compliance Code | compliant | compliant | _compli |
| Maximum collector current (IC) | 0.1 A | 0.1 A | 0.1 A |
| Collector-emitter maximum voltage | 32 V | 45 V | 32 V |
| Configuration | SINGLE | SINGLE | SINGLE |
| JEDEC-95 code | TO-18 | TO-18 | TO-18 |
| JESD-30 code | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 |
| JESD-609 code | e0 | e0 | e0 |
| Number of components | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 |
| Maximum operating temperature | 200 °C | 200 °C | 200 °C |
| Package body material | METAL | METAL | METAL |
| Package shape | ROUND | ROUND | ROUND |
| Package form | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Polarity/channel type | NPN | NPN | NPN |
| Maximum power dissipation(Abs) | 0.6 W | 0.6 W | 0.6 W |
| Certification status | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO |
| Terminal surface | TIN LEAD | TIN LEAD | Tin/Lead (Sn/Pb) |
| Terminal form | WIRE | WIRE | WIRE |
| Terminal location | BOTTOM | BOTTOM | BOTTOM |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| transistor applications | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON | SILICON |
| Nominal transition frequency (fT) | 150 MHz | 150 MHz | 150 MHz |
| Maximum off time (toff) | 800 ns | 800 ns | 800 ns |
| Maximum opening time (tons) | 150 ns | 150 ns | 150 ns |
| Maker | Central Semiconductor | - | Central Semiconductor |
| Minimum DC current gain (hFE) | 60 | 60 | - |
| Base Number Matches | 1 | 1 | - |
京公网安备 11010802033920号
EEWORLD
