NTE180 (PNP) & NTE181 (NPN)
Silicon Power Transistor
High Power Audio Amplifier
Description:
The NTE180 (PNP) and NTE181 (NPN) are silicon complementary transistors in a TO3 type case
designed for use as output devices in complementary audio amplifiers to 100 watts music power per
channel.
Features:
D
High DC Current Gain: h
FE
= 25 – 100 @ I
C
= 7.5A
D
Excellent Safe Operating Area
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CER
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Collector–Base Voltage, V
CB
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V
Emitter–Base Voltage, V
EB
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A
Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.5A
Total Device Dissipation (T
C
= +25°C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.14W/°C
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Thermal Resistance, Junction–to–Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.875°C/W
Electrical Characteristics:
(T
C
=+25°C unless otherwise specified)
Parameter
OFF Characteristics
Collector–Emitter Breakdown Voltage V
(BR)CER
I
C
= 200mA, R
BE
= 100Ω, Note 1
Collector–Emitter Sustaining Voltage
Collector–Base Cutoff Current
Emitter–Base Cutoff Current
V
CEO(sus)
I
C
= 200mA, Note 1
I
CBO
I
EBO
V
CB
= 100V, I
E
= 0
V
CB
= 100V, I
E
= 0, T
C
= +150°C
V
BE
= 4V, I
C
= 0
100
90
–
–
–
–
–
–
–
–
–
–
1.0
5.0
1.0
V
V
mA
mA
mA
Symbol
Test Conditions
Min
Typ Max Unit
Note 1. Pulse Test: Pulse Width
≤
300µs. Duty Cycle
≤
2%.
Electrical Characteristics (Cont’d):
(T
C
=+25°C unless otherwise specified)
Parameter
ON Characteristics
(Note 1)
DC Current Gain
Base–Emitter ON Voltage
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Dynamic Characteristics
Current Gain–Bandwidth Product
f
T
I
C
= 1A, V
CE
= 10V, f = 1MHz
2.0
–
–
MHz
h
FE
V
BE(on)
V
CE(sat)
V
BE(sat)
I
C
= 7.5A, V
CE
= 2V
I
C
= 7.5A, V
CE
= 2V
I
C
= 7.5A, I
B
= 750mA
I
C
= 7.5A, I
B
= 750mA
25
–
–
–
–
–
–
–
100
1.3
0.8
1.3
V
V
V
Symbol
Test Conditions
Min
Typ Max Unit
Note 1. Pulse Test: Pulse Width
≤
300µs. Duty Cycle
≤
2%.
Note 2. NTE181MP is a matched pair of NTE181 with their DC Current Gain (h
FE
) matched to within
10% of each other.
Note 3. NTE180MCP is a matched complementary pair containing 1 each of NTE180 (PNP) and
NTE181 (NPN).
.135 (3.45) Max
.350 (8.89)
.875 (22.2)
Dia Max
Seating
Plane
.312 (7.93) Min
Emitter
.215 (5.45)
.040 (1.02)
1.187 (30.16)
.665
(16.9)
.156 (3.96) Dia
(2 Holes)
.430
(10.92)
.188 (4.8) R Max
Base
.525 (13.35) R Max
Collector/Case
Power technology
京公网安备 11010802033920号
EEWORLD
