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BSP135H6906

Description
Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
CategoryDiscrete semiconductor    The transistor   
File Size423KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

BSP135H6906 Overview

Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4

BSP135H6906 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInfineon
package instructionSMALL OUTLINE, R-PDSO-G4
Contacts4
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage600 V
Maximum drain current (Abs) (ID)0.12 A
Maximum drain current (ID)0.12 A
Maximum drain-source on-resistance45 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G4
JESD-609 codee3
Number of components1
Number of terminals4
Operating modeDEPLETION MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)1.8 W
Maximum pulsed drain current (IDM)0.48 A
GuidelineAEC-Q101
surface mountYES
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
Transistor component materialsSILICON
Base Number Matches1
BSP135
SIPMOS
®
Small-Signal-Transistor
Features
• N-channel
• Depletion mode
• dv /dt rated
• Available with
V
GS(th)
indicator on reel
• Pb-free lead plating; RoHS compliant
• Qualified according to AEC Q101
• Halogen­free according to IEC61249­2­21
Product Summary
V
DS
R
DS(on),max
I
DSS,min
600
60
0.02
V
W
A
PG-SOT223
Type
Type
BSP135
BSP135
BSP135
BSP135
Package
Package
PG-SOT223
PG-SOT223
PG-SOT223
PG-SOT223
Tape and Reel Information
Tape and Reel Information
H6327: 1000 pcs/reel
L6327: 1000 pcs/reel
H6906: 1000 pcs/reel
sorted in
V
GS(th)
bands   
1)
  
L6906: 1000 pcs/reel
Marking
Marking
BSP135
BSP135
BSP135
BSP135
Packaging
Packaging
Non dry
Non dry
Non dry
Non dry
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
A
=25 °C
T
A
=70 °C
Pulsed drain current
I
D,pulse
T
A
=25 °C
I
D
=0.12 A,
V
DS
=20 V,
di /dt =200 A/µs,
T
j,max
=150 °C
Value
0.12
0.10
0.48
Unit
A
Reverse diode dv /dt
dv /dt
6
kV/µs
Gate source voltage
ESD Class
(JESD22-A114-HBM)
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
1)
V
GS
±20
1A(>250V,<500V)
V
P
tot
T
j
,
T
stg
T
A
=25 °C
1.8
-55 ... 150
55/150/56
W
°C
 see table on next page and diagram 11
Rev. 1.33
page 1
2012-11-29

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Description Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 POWER, FET mosfet N-CH 600v 120ma sot-223 Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 MOSFET N-CH 600V 120MA SOT-223 MOSFET N-CH 600V 120MA SOT-223 MOSFET N-CH 600V 120MA SOT-223 MOSFET N-CH 600V 120MA SOT-223
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