BSP135E6327 datasheet, PDF - EEWORLD Datasheet

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BSP135E6327: DescriptionPower Field-Effect Transistor, 0.1A I(D), 600V, 60ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN; CategoryThe transistor; File Size418KB，9 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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BSP135E6327 Overview

Power Field-Effect Transistor, 0.1A I(D), 600V, 60ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN

BSP135E6327 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Infineon
Parts packaging code	SOT-223
package instruction	SOT-223, 4 PIN
Contacts	4
Reach Compliance Code	compliant
ECCN code	EAR99
Is Samacsys	N
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	600 V
Maximum drain current (Abs) (ID)	0.12 A
Maximum drain current (ID)	0.1 A
Maximum drain-source on-resistance	60 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G4
JESD-609 code	e0
Humidity sensitivity level	1
Number of components	1
Number of terminals	4
Operating mode	DEPLETION MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	1.8 W
Maximum pulsed drain current (IDM)	0.3 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Base Number Matches	1

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BSP135

SIPMOS Small-Signal-Transistor

Features

• N-channel

• Depletion mode

• dv /dt rated

• Available with

GS(th)

indicator on reel

• Pb-free lead plating; RoHS compliant

• Qualified according to AEC Q101

• Halogenfree according to IEC61249221

Product Summary

DS(on),max

DSS,min

600

0.02

PG-SOT223

Type

BSP135

Package

PG-SOT223

Tape and Reel Information

H6327: 1000 pcs/reel

L6327: 1000 pcs/reel

H6906: 1000 pcs/reel

sorted in

GS(th)

bands

L6906: 1000 pcs/reel

Marking

BSP135

Packaging

Non dry

Maximum ratings,

=25 °C, unless otherwise specified

Parameter

Continuous drain current

Symbol Conditions

=25 °C

=70 °C

Pulsed drain current

D,pulse

=25 °C

=0.12 A,

=20 V,

di /dt =200 A/µs,

j,max

=150 °C

Value

0.12

0.10

0.48

Unit

Reverse diode dv /dt

dv /dt

kV/µs

Gate source voltage

ESD Class

(JESD22-A114-HBM)

Power dissipation

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

±20

1A(>250V,<500V)

tot

stg

=25 °C

1.8

-55 ... 150

55/150/56

°C

see table on next page and diagram 11

Rev. 1.33

page 1

2012-11-29

BSP135E6327 Related Products

	BSP135E6327	BSP135L6327	BSP135L6906	BSP135E6906
Description	Power Field-Effect Transistor, 0.1A I(D), 600V, 60ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN	Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4	Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4	Power Field-Effect Transistor, 0.1A I(D), 600V, 60ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN
Is it Rohs certified?	incompatible	conform to	conform to	incompatible
package instruction	SOT-223, 4 PIN	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4	SOT-223, 4 PIN
Contacts	4	4	4	4
Reach Compliance Code	compliant	compliant	compliant	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99
Shell connection	DRAIN	DRAIN	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	600 V	600 V	600 V	600 V
Maximum drain current (ID)	0.1 A	0.12 A	0.12 A	0.1 A
Maximum drain-source on-resistance	60 Ω	45 Ω	45 Ω	60 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4
Number of components	1	1	1	1
Number of terminals	4	4	4	4
Operating mode	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	0.3 A	0.48 A	0.48 A	0.3 A
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Base Number Matches	1	1	1	1
Maker	Infineon	-	Infineon	Infineon
Maximum drain current (Abs) (ID)	0.12 A	0.12 A	0.12 A	-
JESD-609 code	e0	-	e3	e3
Humidity sensitivity level	1	1	1	-
Maximum operating temperature	150 °C	150 °C	150 °C	-
Peak Reflow Temperature (Celsius)	260	260	260	-
Maximum power dissipation(Abs)	1.8 W	1.8 W	1.8 W	-
Terminal surface	Tin/Lead (Sn/Pb)	-	MATTE TIN	MATTE TIN
Maximum time at peak reflow temperature	NOT SPECIFIED	40	40	-

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