V
DSM
I
TAVM
I
TRMS
I
TSM
V
T0
r
T
=
=
=
=
=
=
4200 V
4275 A
6715 A
60000 A
0.95 V
0.130 mΩ
Doc. No. 5SYA1051-01 Sep.00
Phase Control Thyristor
5STP 38Q4200
•
Patented free-floating silicon technology
•
Low on-state and switching losses
•
Designed for traction, energy and industrial applications
•
Optimum power handling capability
•
Interdigitated amplifying gate.
Blocking
Part Number
V
DRM
V
RSM1
I
DRM
I
RRM
dV/dt
crit
V
RRM
5STP 38Q4200
4200 V
4600 V
5STP 38Q4000
4000 V
4400 V
≤
400 mA
≤
400 mA
2000 V/µs
5STP 38Q3600
3600 V
4000 V
Conditions
f = 50 Hz, t
p
= 10ms
t
p
= 5 ms, single pulse
V
DRM
V
RRM
@ Exp. to 0.67xV
DRM
T
j
= 125°C
Mechanical data
F
M
Mounting force
nom.
min.
max.
a
Acceleration
Device unclamped
Device clamped
m
D
S
D
a
Weight
Surface creepage distance
Air strike distance
50 m/s
2
100 m/s
2.1 kg
36 mm
15 mm
2
90 kN
81 kN
108 kN
ABB Semiconductors AG reserves the right to change specifications without notice.
5STP 38Q4200
On-state
I
TAVM
I
TRMS
I
TSM
I
2
t
Max. average on-state current
Max. RMS on-state current
Max. peak non-repetitive
surge current
Limiting load integral
4275 A
6715 A
60000 A
65000 A
18000 kA
2
s
17500 kA
2
s
V
T
V
T0
r
T
I
H
On-state voltage
Threshold voltage
Slope resistance
Holding current
1.35 V
0.95 V
0.130 mΩ
40-100 mA
20-75 mA
I
L
Latching current
100-500 mA
150-350 mA
tp
tp
tp
tp
I
T
I
T
T
j
T
j
T
j
T
j
=
=
=
=
=
=
10 ms
8.3 ms
10 ms
8.3 ms
3000 A
2500 - 7500 A
T
j
=
125°C
T
j
=
125°C
Half sine wave, T
C
= 70°C
After surge:
V
D
= V
R
= 0V
= 25°C
= 125°C
= 25°C
= 125°C
Switching
di/dt
crit
Critical rate of rise of on-state
current
≤
≤
250 A/µs
500 A/µs
Cont.
60 sec.
V
D
≤
0.67⋅V
DRM
I
TRM
=
I
FG
t
d
t
q
Delay time
Turn-off time
3.0 µs
600 µs
V
D
= 0.4⋅V
DRM
I
FG
=
=
T
j
= 125°C
5000 A f = 50 Hz
2.0 A t
r
= 0.5 µs
2.0 A t
r
= 0.5 µs
5000 A T
j
= 125°C
200 V
-5 A/µs
V
D
≤
0.67⋅V
DRM
I
TRM
=
dv
D
/dt = 20V/µs V
R
>
Q
rr
Recovery charge
min
max
5000 µAs
10000 µAs
di
T
/dt =
Triggering
V
GT
I
GT
V
GD
I
GD
V
FGM
I
FGM
V
RGM
P
G
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Gate non-trigger current
Peak forward gate voltage
Peak forward gate current
Peak reverse gate voltage
Maximum gate power loss
2.6 V
T
j
= 25°C
400 mA T
j
= 25°C
0.3 V
10 mA
12 V
10 A
10 V
3W
V
D
V
D
= 0.4⋅V
DRM
= 0.4⋅V
DRM
ABB Semiconductors AG reserves the right to change specifications without notice.
2 of 6
Doc. No. 5SYA1051-01 Sep.00
5STP 38Q4200
Thermal
T
j max
T
j stg
R
thJC
Max. junction temperature
Storage temperature
range
Thermal resistance
junction to case
125°C
-40...150°C
10 K/kW
10 K/kW
5 K/kW
R
thCH
Thermal resistance case to
heat sink
Analytical function for transient thermal impedance:
Anode side cooled
Cathode side cooled
Double side cooled
Single side cooled
Double side cooled
2 K/kW
1 K/kW
Z
thJC
(t) =
∑
R
i
(1 - e
-t/
τ
i
)
i
=
1
i
R
i
(K/kW)
τ
i
(s)
1
3.27
0.5237
2
0.736
0.1082
3
0.661
0.02
4
0.312
0.0075
Fig. 1
Transient thermal impedance junction to case.
On-state characteristic model:
V
T
=
A
+
B
⋅
i
T
+
C
⋅
ln(
i
T
+
1)
+
D
⋅
I
T
Valid for i
T
= 500 – 14000 A
n
A
0.341725
B
0.00009
C
0.07628
D
0.00231
Fig 2.
On-state characteristics.
Fig. 3
On state characteristics.
ABB Semiconductors AG reserves the right to change specifications without notice.
3 of 6
Doc. No. 5SYA1051-01 Sep.00
5STP 38Q4200
T
case
(°C)
130
Double-sided cooling
125
120
115
110
105
100
95
90
85
80
75
70
0
1000
2000
3000
4000
5000
6000
7000
DC
180° rectangular
180° sine
120° rectangular
I
TAV
(A)
Fig. 4
On-state power dissipation vs. mean on-
state current. Turn-on losses excluded.
Fig. 5
Max. permissible case temperature vs. mean
on-state current.
Fig. 6
Surge on-state current vs. pulse length.
Half-sine wave.
Fig. 7
Surge on-state current vs. number of pulses.
Half-sine wave, 10 ms, 50Hz.
ABB Semiconductors AG reserves the right to change specifications without notice.
4 of 6
Doc. No. 5SYA1051-01 Sep.00
5STP 38Q4200
5STP 38Q4200
Fig. 8
Gate trigger characteristics.
Fig. 9
Max. peak gate power loss.
Fig. 10
Recovery charge vs. decay rate of on-state
current.
Fig. 11
Peak reverse recovery current vs. decay rate
of on-state current.
Turn –off time, typical parameter relationship
.
Fig. 12
t
q
/t
q1
=
f
1
(
T
j
)
Fig. 13
t
q
/t
q1
=
f
2
(
-di/dt
)
Fig. 14
t
q
/t
q1
=
f
3
(
dv/dt
)
t
q
=
t
q1
•
t
q
/t
q1
f
1
(T
j
)
•
t
q
/t
q1
f
2
(-di/dt)
•
t
q
/t
q1
f
3
(dv/dt)
t
q1
:at normalized values (see page 2)
t
q
: at varying conditions
ABB Semiconductors AG reserves the right to change specifications without notice.
5 of 6
Doc. No. 5SYA1051-01 Sep.00
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