TECHNICAL SPECIFICATION
SEMICONDUCTOR
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(NPN)
RECTRON
BCW66H
* Power dissipation
P
CM
:
0.2
W (Tamb=25
O
C)
* Collector current
I
CM
:
0.8
A
* Collector-base voltage
V
(BR)CBO
: 75
V
* Operating and storage junction temperature range
T
J
,T
stg
: -55
O
C to +150
O
C
FEATURES
SOT-23
COLLECTOR
3
MECHANICAL DATA
*
*
*
*
*
Case: Molded plastic
Epoxy: UL 94V-O rate flame retardant
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
Weight: 0.008 gram
BASE
1
EMITTER
2
0.055(1.40)
0.047(1.20)
0.006(0.15)
0.003(0.08)
0.020(0.50)
0.012(0.30)
0.043(1.10)
0.035(0.90)
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.012(0.30)
0.100(2.55)
0.089(2.25)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase , half wave, 60H
Z
, resistive or inductive load.
For capacitive load, derate current by 20%.
O
0.019(2.00)
0.071(1.80)
1
3
2
0.118(3.00)
0.110(2.80)
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS
( @ TA = 25
O
C unless otherwise noted )
CHARACTERISTICS
Collector-base breakdown voltage (I
C
= 10mA, I
E
=0)
Collector-emitter breakdown voltage (I
C
= 10mA, I
B
=0)
Emitter-base breakdown voltage (I
E
= 10mA, I
C
=0)
Collector cut-off current (V
CB
= 45V, I
E
=0)
Collector cut-off current (V
EB
= 4V, I
C
=0)
DC current gain (V
CE
= 10V, I
C
= 0.1mA)
DC current gain (V
CE
= 1V, I
C
= 10mA)
DC current gain (V
CE
= 1V, I
C
= 100mA)
DC current gain (V
CE
= 2V, I
C
= 500mA)
Collector-emitter saturation voltage (I
C
= 100mA, I
B
= 10mA)
Collector-emitter saturation voltage (I
C
= 500mA, I
B
= 50mA)
Base-emitter saturation voltage (I
C
= 100mA, I
B
= 10mA)
Base-emitter saturation voltage (I
C
= 500mA, I
B
= 50mA)
Transition frequency (V
CE
= 10V, I
C
= 20mA, f=100MH
Z
)
Collector base capacitance (V
CB
= 10V, I
E
= 0, f=1MH
Z
)
Emitter base capacitance (V
EB
= 0.5V, I
E
= 0, f=1MH
Z
)
Noise figure (V
CE
= 5V, I
E
= 0.2mA, f=1kHz,
Df=200Hz,
RG=2KW)
Marking
Note 1: "Fully ROHS compliant", "100% Sn plating (Pb-free)".
V
CE(sat)
V
BE(sat)
f
T
C
CB
C
EB
NF
h
FE
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
MIN
75
45
5
-
-
80
180
250
100
-
-
-
-
100
-
-
-
EH
2006-3
TYP
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX
-
-
-
0.02
0.02
-
-
630
-
0.3
0.7
1.25
2
-
12
80
10
UNITS
V
V
V
mA
mA
-
-
-
-
V
V
V
V
MHz
pF
pF
dB
DISCLAIMER NOTICE
Rectron Inc reserves the right to make changes without notice to any product
specification herein, to make corrections, modifications, enhancements or other
changes. Rectron Inc or anyone on its behalf assumes no responsibility or liabi-
lity for any errors or inaccuracies. Data sheet specifications and its information
contained are intended to provide a product description only. "Typical" paramet-
ers which may be included on RECTRON data sheets and/ or specifications ca-
n and do vary in different applications and actual performance may vary over ti-
me. Rectron Inc does not assume any liability arising out of the application or
use of any product or circuit.
Rectron products are not designed, intended or authorized for use in medical,
life-saving implant or other applications intended for life-sustaining or other rela-
ted applications where a failure or malfunction of component or circuitry may di-
rectly or indirectly cause injury or threaten a life without expressed written appr-
oval of Rectron Inc. Customers using or selling Rectron components for use in
such applications do so at their own risk and shall agree to fully indemnify Rect-
ron Inc and its subsidiaries harmless against all claims, damages and expendit-
ures.
RECTRON
Embedded System
京公网安备 11010802033920号
EEWORLD
