EEWORLDEEWORLDEEWORLD

Part Number

Search

IRFR3711TRL

Description
MOSFET N-CH 20V 100A DPAK
Categorysemiconductor    Discrete semiconductor   
File Size162KB,11 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

IRFR3711TRL Overview

MOSFET N-CH 20V 100A DPAK

IRFR3711TRL Parametric

Parameter NameAttribute value
FET typeN channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)20V
Current - Continuous Drain (Id) at 25°C100A(Tc)
Drive voltage (maximum Rds On, minimum Rds On)4.5V,10V
Rds On (maximum value) when different Id, Vgs6.5 milliohms @ 15A, 10V
Vgs (th) (maximum value) when different Id3V @ 250µA
Gate charge (Qg) at different Vgs (maximum value)44nC @ 4.5V
Vgs (maximum value)±20V
Input capacitance (Ciss) at different Vds (maximum value)2980pF @ 10V
FET function-
Power dissipation (maximum)2.5W(Ta),120W(Tc)
Operating temperature-55°C ~ 150°C(TJ)
Installation typesurface mount
Supplier device packagingD-Pak
Package/casingTO-252-3, DPak (2 leads + tab), SC-63
PD- 94061B
SMPS MOSFET
Applications
l
High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l
High Frequency Buck Converters for
Server Processor Power Synchronous FET
l
Optimized for Synchronous Buck
Converters Including Capacitive Induced
Turn-on Immunity
l
100% R
G
Tested
Benefits
l
Ultra-Low Gate Impedance
l
Very Low RDS(on) at 4.5V V
GS
l
Fully Characterized Avalanche Voltage
and Current
IRFR3711
IRFU3711
HEXFET
®
Power MOSFET
V
DSS
20V
R
DS(on)
max
6.5mΩ
I
D
110A
„
D-Pak
IRFR3711
I-Pak
IRFU3711
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C
= 25°C
T
J
, T
STG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Max
20
± 20
100
440
2.5
120
0.96
-55 to +150
Units
V
c
f
69
f
A
W
W/°C
°C
Maximum Power Dissipation
Maximum Power Dissipation
g
Linear Derating Factor
Junction and Storage Temperature Range
Thermal Resistance
Symbol
R
θJC
R
θJA
R
θJA
Parameter
Junction-to-Case
h
Typ
Max
1.04
50
110
Units
°C/W
Junction-to-Ambient (PCB Mount)
Junction-to-Ambient
h
gh
–––
–––
–––
Notes

through
†
are on page 10
www.irf.com
1
1/27/04

IRFR3711TRL Related Products

IRFR3711TRL IRFU3711 IRFR3711 IRFR3711TR IRFR3711TRR
Description MOSFET N-CH 20V 100A DPAK MOSFET N-CH 20V 100A I-PAK MOSFET N-CH 20V 100A DPAK MOSFET N-CH 20V 100A DPAK MOSFET N-CH 20V 100A DPAK
FET type N channel N channel - N channel N channel
technology MOSFET (metal oxide) MOSFET (metal oxide) - MOSFET (metal oxide) MOSFET (metal oxide)
Drain-source voltage (Vdss) 20V 20V - 20V 20V
Current - Continuous Drain (Id) at 25°C 100A(Tc) 100A(Tc) - 100A(Tc) 100A(Tc)
Drive voltage (maximum Rds On, minimum Rds On) 4.5V,10V 4.5V,10V - 4.5V,10V 4.5V,10V
Rds On (maximum value) when different Id, Vgs 6.5 milliohms @ 15A, 10V 6.5 milliohms @ 15A, 10V - 6.5 milliohms @ 15A, 10V 6.5 milliohms @ 15A, 10V
Vgs (th) (maximum value) when different Id 3V @ 250µA 3V @ 250µA - 3V @ 250µA 3V @ 250µA
Gate charge (Qg) at different Vgs (maximum value) 44nC @ 4.5V 44nC @ 4.5V - 44nC @ 4.5V 44nC @ 4.5V
Vgs (maximum value) ±20V ±20V - ±20V ±20V
Input capacitance (Ciss) at different Vds (maximum value) 2980pF @ 10V 2980pF @ 10V - 2980pF @ 10V 2980pF @ 10V
Power dissipation (maximum) 2.5W(Ta),120W(Tc) 2.5W(Ta),120W(Tc) - 2.5W(Ta),120W(Tc) 2.5W(Ta),120W(Tc)
Operating temperature -55°C ~ 150°C(TJ) -55°C ~ 150°C(TJ) - -55°C ~ 150°C(TJ) -55°C ~ 150°C(TJ)
Installation type surface mount Through hole - surface mount surface mount
Supplier device packaging D-Pak IPAK(TO-251) - D-Pak D-Pak
Package/casing TO-252-3, DPak (2 leads + tab), SC-63 TO-251-3 short lead, IPak, TO-251AA - TO-252-3, DPak (2 leads + tab), SC-63 TO-252-3, DPak (2 leads + tab), SC-63
Workplace survival tips: Treat your self-esteem well
Interpersonal barriers and conflicts in the workplace are all related to self-esteem. Hurting self-esteem is equivalent to hurting feelings, so treating self-esteem well has become a great knowledge i...
ESD技术咨询 Talking about work
What does a 5G base station look like? This article will help you find out!
So far, 113,000 5G base stations have been put into operation across the country, and it is expected to reach 130,000 by the end of the year. Without 5G base stations, there will be no 5G high-speed n...
btty038 RF/Wirelessly
Car head-up display (HUD) breaks through the driver's traditional perspective
[align=left][color=#000]Generally speaking, the headlights of cars are usually light-emitting diode (LED) headlight units with switch mode regulators. Such LED headlights are static, either on or off....
maylove DSP and ARM Processors
Huawei Logic Level Design Specification Textbook
Huawei Logic Level Design Specification Textbook...
tecfighter Analog electronics
MSP430Ware study notes UART SMCLK 115200-8-N-1
[p=35, null, left][color=#555555][size=3]1. Before initializing UART0, you need to initialize ACLK, SMCLK and MCLK. In the sample code, XT1 is used, ACLK is 32768, and SMCLK and MCLK are about 8MHZ. [...
Aguilera Microcontroller MCU
8051f MCU silicon ide compilation advice
When I compile, it prompts LInker not found C:\Silabs...\BIN\bi51.exe. What's going on? Is it because my software is not installed properly? But I uninstalled and installed it again, but it still work...
painache Embedded System

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1777  861  2154  473  2836  36  18  44  10  58 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号