PT4800/PT4800F/PT4810/PT4810F/PT4850F
PT4800/PT4800F/PT4810
PT4810F/PT4850F
s
Features
1. Thin type package ( Thickness : 1.5mm )
2. Visible light cut-off type :
PT4800F/PT4810F/PT4850F
3. Single phototransistor output :
PT4800/PT4800F/PT4850F
Darlington phototransistor output:
PT4810/PT4810F
4. Thin type
Thin Type Phototransistor
s
Outline Dimensions
Rest of gate
:
0.3
MAX
3.0
1.0
2
-
C0.5
0.8
1.6
( Unit : mm )
Burry's dimensions
:
0.3
MAX
φ
0.8
2
-
0.45
2
-
0.9
1.7
3.5
PT4800/F
PT4850F
2
g
Epoxy resin
1.5
0.8
0.7
0.8
1.8
s
Applications
1. VCRs
2. Floppy disk drives
2.54
1
2
0.5
MIN.
PT4810F
Mark(blue)
PT4850F
Mark (black )
17.5
±
0.5
1
PT4810/F
2
2
-
0.25
1
1 Emitter
2 Collector
g
Epoxy resin
PT4800
PT4810
F type
Transparent resin
Transparent blue resin
Visible light cut-off resin ( black )
s
Absolute Maximum Ratings
Parameter
Collector-emitter voltage
Emitter-collector voltage
PT4800/PT4800F/PT4850F
Collector current
PT4810/PT4810F
Collector power dissipation
Operating temperature
Storage temperature
*1
Soldering temperature
Symbol
V
CEO
V
ECO
I
C
P
C
T
opr
T
stg
T
sol
Rating
35
6
20
50
75
- 25 to + 85
- 40 to + 85
260
( Ta = 25˚C )
Unit
V
V
mA
mW
˚C
˚C
˚C
*1 For 3 seconds at the position of 1.8mm from the bottom face of resin package
“
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.
”
PT4800/PT4800F/PT4810/PT4810F/PT4850F
s
Electro-optical Characteristics
Parameter
PT4800
PT4800F
*2
Collector current
PT4850F
PT4810
PT4810F
PT4800/PT4800F
PT4850F
Collector dark current
PT4810/PT4810F
PT4800/PT4800F
*2
PT4850F
Collector-emitter saturation
voltage
PT4810/PT4810F
Collector-emitter breakdown voltage
Emitter-collector breakdown voltage
PT4800
PT4800F
PT4850F
PT4810
PT4810F
PT4800/PT4800F
PT4850F
PT4810/PT4810F
Response
time
Fall time
PT4810/PT4810F
Half intensity angle
∆θ
PT4800/PT4800F
PT4850F
t
f
Symbol
Conditions
E
e
= 1mW/cm
2
V
CE
= 5V
E
e
= 0.1mW/cm
2
V
CE
= 2V
I
CEO
E
e
= 0, V
CE
= 20V
E
e
= 0, V
CE
= 10V
E
e
= 10mW/cm
2
I
C
= 0.5mA
E
e
= 1mW/cm
2
I
C
= 2.5mA
I
C
= 0.1mA
E
e
= 0
I
E
= 0.01mA
E
e
= 0
MIN.
0.12
0.08
0.12
0.45
0.27
-
-
-
-
35
6
-
-
-
-
-
-
-
-
-
-
TYP.
0.4
0.25
-
-
-
-
-
-
-
-
-
800
860
860
800
860
3.0
80
3.5
70
± 35
( Ta = 25˚C )
MAX.
1.0
0.75
0.56
7.0
6.0
0.1
1.0
0.4
1.0
-
-
-
-
-
-
-
-
400
-
350
-
Unit
mA
mA
mA
mA
mA
mA
mA
V
V
V
V
nm
nm
nm
nm
nm
µ
s
µ
s
µ
s
µ
s
˚
I
C
V
CE
( sat )
BV
CEO
BV
ECO
Peak sensitivity
wavelength
λ
p
-
Rise time
t
r
V
CE
= 2V, I
C
= 2mA
R
L
= 100Ω
V
CE
= 2V
I
C
= 10mA
R
L
= 100Ω
V
CE
= 2V, I
C
= 2mA
R
L
= 100Ω
V
CE
= 2V
I
C
= 10mA
R
L
= 100Ω
-
*2 E
e
: Irradiance by CIE standard light source A ( tungsten lamp)
Fig. 1 Collector Power Dissipation vs.
Ambient Temperature
Collector power dissipation P
C
( mW )
Fig. 2-a Collector Dark Current vs.
Ambient Temperature
( PT4800/PT4800F/PT4850F )
-6
10
5
V
CE
= 20V
100
(A)
CEO
2
10
- 7
5
2
Collector dark current I
0
25
50
75 85
Ambient temperature T
a
( ˚C )
100
80
60
10
- 8
5
2
40
10
- 9
5
2
20
0
- 25
10
- 10
0
25
50
75
Ambient temperature T
a
( ˚C )
100
PT4800/PT4800F/PT4810/PT4810F/PT4850F
Fig. 2-b Collector Dark Current vs. Ambient
Temperature
( PT4810/PT4810F )
-4
10
5
5
5
5
5
5
5
5
Fig. 3-a Relative Collector Current vs.
Ambient Temperature
( PT4800/PT4800F/PT4850F )
160
140
Relative collector current ( % )
120
100
80
60
40
20
0
0
V
CE
= 5V
E
e
= 1mW/cm
2
10
- 5
(A)
CEO
V
CE
= 10V
10
- 6
10
- 7
10
- 8
10
- 9
10
- 10
10
- 11
- 25
0
25
50
75
Ambient temperature T
a
( ˚C )
100
Collector dark current I
10
20
30
40
50
60
Ambient temperature T
a
( ˚C )
70
Fig. 3-b Relative Collector Current vs.
Ambient Temperature
( PT4810/PT4810F )
175
V
CE
= 2V
E
e
= 0.1mW/cm
2
Fig. 4-a Collector Current vs.
Irradiance
20
10
Collector current I
C
( mA )
5
V
CE
= 5V
T
a
= 25˚C
( PT4800 )
Relative collector current ( % )
150
125
2
1
0.5
100
75
0.2
50
- 25
0.1
0.1
0
25
50
75
Ambient temperature T
a
( ˚C )
100
0.2
0.5
1
2
5
Irradiance E
e
( mW/cm
2
)
10
20
Fig. 4-b Collector Current vs. Irradiance
( PT4800F/PT4850F )
10
V
CE
= 5V
5 T
a
= 25˚C
Collector current I
C
( mA )
Fig. 4-c Collector Current vs. Irradiance
( PT4810/PT4810F )
5
V
CE
= 2V
T
a
= 25˚C
Collector current I
C
( mA )
2
PT4810
PT4810F
2
1
0.5
1
0.5
0.2
0.1
0.05
0.1
0.2
0.2
0.5
1
2
5
Irradiance E
e
( mW/cm
2
)
10
20
0.1
2
5
2
10
-1
Irradiance E
e
( mW/cm
2
)
5
1
PT4800/PT4800F/PT4810/PT4810F/PT4850F
Fig. 5-a Collector Current vs.
Collector-emitter Voltage
(PT4800 )
0.6
T
a
= 25˚C
0.5
Collector current I
C
( mA )
Collector current I
C
( mA )
Fig. 5-b Collector Current vs.
Collector-emitter Voltage
(PT4800F/PT4850F )
1.2
T
a
= 25˚C
E
e
= 3mW/cm
2
2.5mW/cm
2
0.8
2.0mW/cm
2
1.5mW/ cm
2
0.4
1.0mW/cm
2
0.2
0.6mW/cm
2
0.8mW/cm
2
1.0
0.4
E
e
= 1.0mW/cm
2
0.3
0.75mW/cm
2
0.6
0.2
0.5mW/cm
2
0.1
0.25mW/cm
2
0.1mW/cm
2
0
0
5
10
15
20
25
30
Collector-emitter voltage V
CE
( V )
35
0
0
2
4
6
8
10
12
Collector-emitter voltage V
CE
( V )
14
Fig. 5-c Collector Current vs.
Collector-emitter Voltage
(PT4810 )
2.4
T
a
= 25˚C
2.0
Collector current I
C
( mA )
E
e
= 0.2mW/cm
2
Fig. 5-d Collector Current vs.
Collector-emitter Voltage
(PT4810F )
1.2
T
a
= 25˚C
1.0
( mA )
E
e
= 0.2mW/cm
2
0.15mW/cm
2
1.2
0.1mW/cm
2
0.08mW/cm
2
0.4
0.06mW/cm
2
0.04mW/cm
2
1
2
3
4
Collector-emitter voltage V
0.02mW/cm
2
5
(V)
6
Collector current I
C
1.6
0.8
0.15mW/cm
2
0.6
0.8
0.4
0.1mW/cm
2
0.08mW/cm
2
0.06mW/cm
2
0.04mW/cm
2
0.02mW/cm
2
0.2
0
0
0
0
1
CE
2
3
4
Collector-emitter voltage V
CE
5
(V)
6
Fig. 6 Spectral Sensitivity
100
T
a
= 25˚C
Fig. 7-a Response Time vs. Load Resistance
( PT4800/PT4800F/PT4850F )
100
50
Response time t
r
, t
f
(
µ
s )
V
CE
= 2V
I
C
= 2mA
T
a
= 25˚C
80
Relative sensitivity ( % )
PT4800
20
10
5 t
f
t
r
2
60
PT4810 PT4800F
PT4801F
PT4850F
t
r
t
f
40
20
0
400
500
600 700 800 900
Wavelength
λ
( nm )
1000
1100
1
0.1
0.2
0.5
1
2
Load resistance R
L
( k
Ω
)
5
10
PT4800/PT4800F/PT4810/PT4810F/PT4850F
Fig. 7-b Response Time vs. Load Resistance
( PT4810 / PT4810F )
1000
V
CE
= 2V
I
C
= 10mA
T
a
= 25˚C
Response time (
µ
s )
100
t
r
t
f
V
CC
t
d
10
t
s
R
L
Output
90%
10%
Output Input
Test Circuit for Response Time
( PT4800 / PT4800F / PT4850F )
t
r
t
f
1
10
100
1000
Load resistance R
L
(
Ω
)
5000
Test Circuit for Response Time
( PT4810 / PT4810F )
Fig. 8 Sensitivity Diagram
- 20˚
- 10˚
0˚
100
- 30˚
80
Relative sensitivity ( % )
( T
a
= 25˚C)
+ 10˚
+ 20˚
+ 30˚
Output Input
V
CC
R
L
Output
t
d
t
r
t
s
t
f
90%
- 40˚
60
+ 40˚
- 50˚
10%
- 60˚
- 70˚
- 80˚
- 90˚
40
+ 50˚
+ 60˚
20
+ 70˚
+ 80˚
0
Angular displacement
θ
+ 90˚
Fig. 9-a Collector-emitter Saturation
Voltage vs. Irradiance
(PT4800 )
2.2
2.0
Collector-emitter saturation voltage
V
CE ( sat )
1.8
I
C
= 0.05mA
0.1mA
0.5mA
1.0mA
1.5mA
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.1
0.2
0.5
2
1
Irradiance E
e
( mW/cm
2
)
5
10
T
a
= 25˚C
Fig. 9-b Collector-emitter Saturation
Voltage vs. Irradiance
( PT4800F / PT4850F )
2.2
2.0
Collector-emitter saturation voltage
V
CE ( sat )
( V )
1.8
I
C
= 0.05mA
0.5mA
0.1mA
1.0mA
1.5mA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
T
a
= 25˚C
0
0.1 0.2
0.5
2
5
1
Irradiance E
e
( mW/cm
2
)
2.0mA
1.6
10
20
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