Second Breakdown Collector Current with base forward biased
(V
CE
= 20 V, t = 1 s)
(V
CE
= 40 V, t = 1 s)
Emitter–Cutoff Current
(V
EB
= 5 V)
Emitter–Base Reverse Voltage
(I
E
= 50 mA)
Collector–Emitter Cutoff Current
(V
CE
= 100 V)
Collector Cutoff Current at Reverse Bias
(V
CE
= 140 V, V
BE
= – 1.5 V)
(V
CE
= 140 V, V
BE
= – 1.5 V, T
C
= 125_C)
(V
CE
= 260 V, V
BE
= – 1.5 V)
Collector–Emitter Sustaining Voltage
(I
C
= 200 mA, I
B
= 0, L = 25 mH)
Base–Emitter Saturation Voltage
(I
C
= 50 A, I
B
= 5 A)0
Characteristic
(I
C
= 50 A I
B1
= I
B2
= 5 A,
A,
A
V
CC
= 30 V, R
C
= 0.6
Ω)
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BUV20 BUV60
BUV20, BUV60
BUV20, BUV60
BUV20, BUV60
2
BUV20
BUV20
BUV60
BUV60
BUV60
BUV60
BUV20
BUV20
BUV20
BUV20
BUV60
BUV60
BUV20
BUV20
V
CEO(sus)
Symbol
V
CE(sat)
V
CE(sat)
V
BE(sat)
V
BE(sat)
V
EBO
I
CEO
I
EBO
I
CEX
h
FE
I
S/b
t
on
f
T
t
s
t
f
Min
125
8.0
12
1.5
20
10
7
0.25
Max
1.2
1.5
1.6
1.8
0.9
0.9
1.2
2.0
0.6
1.2
1.0
3.0
3.0
12
60
–
mAdc
mAdc
mAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Vdc
µs
V
BUV20 BUV60
100
50
IC, COLLECTOR CURRENT (A)
10
1
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
– V
CE
limits of the transistor that must be observed for reliable
operation i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 2 is based on T
C
= 25_C. T
J(pk)
is
variable depending on power level. Second breakdown
limitations do not derate the same as thermal limitations.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
1
10
100 125
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
Figure 2. Active Region Safe Operating Area
2.0
I
C
/I
B
= 10
1.6
V, VOLTAGE (V)
1.2
0.8
0.4
0
V
CE(sat)
V
BE(sat)
100
V
CE
= 4 V
80
60
40
20
0
100
1
10
1
10
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 3. “On” Voltages
Figure 4. DC Current Gain
t, TIME (
µ
s)
3.0
2.0
1.0
0.4
0.3
0.2
0
10
20
t
S
t
on
V
CC
= 30 V
I
C
/I
B1
= 10
I
B1
= I
B2
R
C
I
B2
I
B1
t
F
R
C
— Non inductive resistance
V
CC
10
4
µF
V
CC
= 30 V
R
C
= 0.6
Ω
30
40
50
I
C
, COLLECTOR CURRENT (A)
Figure 5. Resistive Switching Performance
Figure 6. Switching Times Test Circuit
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3
BUV20 BUV60
PACKAGE DIMENSIONS
TO–204AE (TO–3)
CASE 197A–05
ISSUE J
A
N
C
–T–
E
D
2 PL
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM
A
B
C
D
E
G
H
K
L
N
Q
U
V
INCHES
MIN
MAX
1.530 REF
0.990
1.050
0.250
0.335
0.057
0.063
0.060
0.070
0.430 BSC
0.215 BSC
0.440
0.480
0.665 BSC
0.760
0.830
0.151
0.165
1.187 BSC
0.131
0.188
MILLIMETERS
MIN
MAX
38.86 REF
25.15
26.67
6.35
8.51
1.45
1.60
1.53
1.77
10.92 BSC
5.46 BSC
11.18
12.19
16.89 BSC
19.31
21.08
3.84
4.19
30.15 BSC
3.33
4.77
K
M
0.30 (0.012)
T Q
M
Y
M
U
V
2
L
G
–Y–
H
B
1
–Q–
0.25 (0.010)
M
T Y
M
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