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SSM3K341R,LF

Description
MOSFET N-CH 60V 6A SOT-23F
Categorysemiconductor    Discrete semiconductor   
File Size257KB,9 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
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SSM3K341R,LF Overview

MOSFET N-CH 60V 6A SOT-23F

SSM3K341R,LF Parametric

Parameter NameAttribute value
FET typeN channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)60V
Current - Continuous Drain (Id) at 25°C6A(Ta)
Drive voltage (maximum Rds On, minimum Rds On)4V,10V
Rds On (maximum value) when different Id, Vgs36 milliohms @ 5A, 10V
Vgs (th) (maximum value) when different Id2.5V @ 100µA
Gate charge (Qg) at different Vgs (maximum value)9.3nC @ 10V
Vgs (maximum value)±20V
Input capacitance (Ciss) at different Vds (maximum value)550pF @ 10V
FET function-
Power dissipation (maximum)1.2W(Ta)
Operating temperature-55°C ~ 175°C(TJ)
Installation typesurface mount
Supplier device packagingSOT-23F
Package/casingSOT-23-3 flat lead
SSM3K341R
MOSFETs
Silicon N-channel MOS (U-MOS-H)
SSM3K341R
1. Applications
Power Management Switches
DC-DC Converters
2. Features
(1)
(2)
(3)
(4)
AEC-Q101 qualified (Note 1)
175
MOSFET
4.0 V drive
Low drain-source on-resistance
: R
DS(ON)
= 28 mΩ (typ.) (@V
GS
= 10 V)
R
DS(ON)
= 36 mΩ (typ.) (@V
GS
= 4.5 V)
R
DS(ON)
= 43 mΩ (typ.) (@V
GS
= 4 V)
(5) HBM: 2-kV class
Note 1: For detail information, please contact to our sales.
3. Packaging and Pin Assignment
1: Gate
2: Source
3: Drain
SOT-23F
Start of commercial production
©2016-2018
Toshiba Electronic Devices & Storage Corporation
1
2016-01
2018-04-18
Rev.5.0
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