NTE2562 datasheet, PDF - EEWORLD Datasheet

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NTE2562: DescriptionSilicon Complementary Transistors High Current Switch; CategoryDiscrete semiconductor The transistor; File Size21KB，2 Pages; ManufacturerNTE; Websitehttp://www.nteinc.com

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NTE2562 Overview

Silicon Complementary Transistors High Current Switch

NTE2562 Parametric

Parameter Name	Attribute value
Maker	NTE
Parts packaging code	SFM
package instruction	TO-220, 3 PIN
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Shell connection	ISOLATED
Maximum collector current (IC)	12 A
Collector-emitter maximum voltage	30 V
Configuration	SINGLE
Minimum DC current gain (hFE)	30
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	NPN
Maximum power dissipation(Abs)	25 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	120 MHz

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NTE2562 (NPN) & NTE2563 (PNP)

Silicon Complementary Transistors

High Current Switch

Description:

The NTE2562 (NPN) and NTE2563 (PNP) are silicon complementary transistors is a TO220 type

package designed for use as a high current switch. Typical application include relay drivers, high–

speed inverters, converters, etc.

Features:

Low Collector–Emitter Saturation Voltage

High Current Capacity

Absolute Maximum Ratings:

= +25°C unless otherwise specified)

Collector–Base Voltage, V

CBO

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V

Collector–Emitter Voltage, V

CEO

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V

Emitter–Base Voltage, V

EBO

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V

Collector Current, I

Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A

Pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A

Collector Dissipation, P

= +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W

= +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25W

Operating Junction Temperature, T

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C

Storage Temperature Range, T

stg

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C

Electrical Characteristics:

= +25°C unless otherwise specified)

Parameter

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Symbol

CBO

EBO

Test Conditions

= 40V, I

= 0

= 4V, I

= 0

= 2V, I

= 1A

= 2V, I

= 6A

Current Gain–Bandwidth Product

= 5V, I

= 1A

Min

–

100

–

Typ

–

120

Max

0.1

200

–

MHz

Unit

NTE2562 Related Products

	NTE2562	NTE2563
Description	Silicon Complementary Transistors High Current Switch	Silicon Complementary Transistors High Current Switch
Maker	NTE	NTE
Parts packaging code	SFM	SFM
package instruction	TO-220, 3 PIN	TO-220, 3 PIN
Contacts	3	3
Reach Compliance Code	unknow	unknow
ECCN code	EAR99	EAR99
Shell connection	ISOLATED	ISOLATED
Maximum collector current (IC)	12 A	12 A
Collector-emitter maximum voltage	30 V	30 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	30	30
JEDEC-95 code	TO-220AB	TO-220AB
JESD-30 code	R-PSFM-T3	R-PSFM-T3
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	NPN	PNP
Maximum power dissipation(Abs)	25 W	25 W
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	120 MHz	120 MHz

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