EEWORLDEEWORLDEEWORLD

Part Number

Search

NTE2559

Description
Silicon Complementary Transistors Darlington, Motor/Relay Driver
CategoryDiscrete semiconductor    The transistor   
File Size21KB,2 Pages
ManufacturerNTE
Websitehttp://www.nteinc.com
Environmental Compliance
Download Datasheet Parametric Compare View All

NTE2559 Overview

Silicon Complementary Transistors Darlington, Motor/Relay Driver

NTE2559 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNTE
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)16 A
Collector-emitter maximum voltage120 V
ConfigurationDARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)2000
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)3 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
NTE2559 (NPN) & NTE2560 (PNP)
Silicon Complementary Transistors
Darlington, Motor/Relay Driver
Absolute Maximum Ratings:
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, I
C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A
Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26A
Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Collector Dissipation (T
FL
= +25°C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3W
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics:
(T
A
= +25°C unless otherwise specified)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Symbol
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
Test Conditions
V
CB
= 120V, I
E
= 0
V
EB
= 6V, I
C
= 0
V
CE
= 4V, I
C
= 8A
I
C
= 8A, I
B
= 16mA
I
C
= 8A, I
B
= 16mA
Min
120
2000
Typ
Max
10
10
1.5
2.5
V
V
Unit
µA
mA
V
Collector–Emitter Breakdown Voltage V
(BR)CEO
I
C
= 10mA, R
BE
=
Note 1. For NTE2560, the polarity is reversed.

NTE2559 Related Products

NTE2559 NTE2560
Description Silicon Complementary Transistors Darlington, Motor/Relay Driver Silicon Complementary Transistors Darlington, Motor/Relay Driver
Reach Compliance Code unknow unknow
ECCN code EAR99 EAR99
Maximum collector current (IC) 16 A 16 A
Collector-emitter maximum voltage 120 V 120 V
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE) 2000 2000
JESD-30 code R-PSFM-T3 R-PSFM-T3
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Polarity/channel type NPN PNP
Maximum power dissipation(Abs) 3 W 3 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2116  445  1081  999  807  43  9  22  21  17 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号