SIT8208AI-GF-25S-12.800000Y datasheet, PDF

SiT8208

Ultra Performance Oscillator

The Smart Timing Choice

Features



Applications



Any frequency between 1 and 80 MHz accurate to 6 decimal places

100% pin-to-pin drop-in replacement to quartz-based oscillators

Ultra low phase jitter: 0.5 ps (12 kHz to 20 MHz)

Frequency stability as low as ±10 PPM

Industrial or extended commercial temperature range

LVCMOS/LVTTL compatible output

Standard 4-pin packages: 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2,

7.0 x 5.0 mm x mm

Instant samples with

Time Machine II

and

field programmable

oscillators

Outstanding silicon reliability of 2 FIT or 500 million hour MTBF

Pb-free, RoHS and REACH compliant

Ultra short lead time

SATA, SAS, Ethernet, PCI Express, video, WiFi

Computing, storage, networking, telecom, industrial control

Electrical Characteristics

[1]

Parameter

Output Frequency Range

Frequency Stability

Symbol

f

F_stab

Min.

1

-10

-20

-25

-50

First year Aging

10-year Aging

Operating Temperature Range

T_use

F_aging

-1.5

-5

-20

-40

Supply Voltage

Vdd

1.71

2.25

2.52

2.97

Current Consumption

OE Disable Current

Idd

I_OD

–

Standby Current

I_std

–

Duty Cycle

Rise/Fall Time

Output Voltage High

Output Voltage Low

Input Voltage High

Input Voltage Low

Input Pull-up Impedance

DC

Tr, Tf

VOH

VOL

VIH

VIL

Z_in

45

–

90%

–

70%

–

2

Typ.

–

1.8

2.5

2.8

3.3

31

29

–

1.2

–

100

–

Max.

80

+10

+20

+25

+50

+1.5

+5

+70

+85

1.89

2.75

3.08

3.63

33

31

30

70

10

55

2

–

10%

–

30%

250

–

Unit

MHz

PPM

°C

V

mA

A

%

ns

Vdd

kΩ

MΩ

15 pF load, 10% - 90% Vdd

IOH = -6 mA, IOL = 6 mA, (Vdd = 3.3V, 2.8V, 2.5V)

IOH = -3 mA, IOL = 3 mA, (Vdd = 1.8V)

No load condition, f = 20 MHz, Vdd = 2.5V, 2.8V or 3.3V

No load condition, f = 20 MHz, Vdd = 1.8V

Vdd = 2.5V, 2.8V or 3.3V, OE = GND, output is Weakly Pulled

Down

Vdd = 1.8 V. OE = GND, output is Weakly Pulled Down

Vdd = 2.5V, 2.8V or 3.3V, ST = GND, output is Weakly Pulled

Down

Vdd = 1.8 V. ST = GND, output is Weakly Pulled Down

25°C

Extended Commercial

Industrial

Supply voltages between 2.5V and 3.3V can be supported.

Contact

SiTime

for additional information.

Inclusive of Initial tolerance at 25 °C, and variations over

operating temperature, rated power supply voltage and load

Condition

Frequency Range

Frequency Stability and Aging

Operating Temperature Range

Supply Voltage and Current Consumption

LVCMOS Output Characteristics

Input Characteristics

Pin 1, OE or ST

Pin 1, OE logic high or logic low, or ST logic high

Pin 1, ST logic low

Note:

1. All electrical specifications in the above table are specified with 15 pF output load and for all Vdd(s) unless otherwise stated.

SiTime Corporation

Rev. 1.02

990 Almanor Avenue

Sunnyvale, CA 94085

(408) 328-4400

www.sitime.com

Revised June 24, 2013

SiT8208

Ultra Performance Oscillator

The Smart Timing Choice

Electrical Characteristics

[1]

(Continued)

Parameter

Startup Time

OE Enable/Disable Time

Resume Time

Symbol

T_start

T_oe

T_resume

Min.

–

Typ.

7

–

6

Max.

10

150

10

Jitter

RMS Period Jitter

RMS Phase Jitter (random)

T_jitt

T_phj

–

1.5

2

0.5

2

3

1

ps

f = 75 MHz, Vdd = 1.8V

f = 10 MHz, Integration bandwidth = 12 kHz to 20 MHz

Unit

ms

ns

ms

Condition

Measured from the time Vdd reaches its rated minimum value

f = 80 MHz, For other frequencies, T_oe = 100 ns + 3 cycles

In standby mode, measured from the time ST pin crosses 50%

threshold. Refer to

Figure 5.

Startup and Resume Timing

Note:

1. All electrical specifications in the above table are specified with 15 pF output load and for all Vdd(s) unless otherwise stated.

Pin Configuration

Symbol

Output

Enable

1

OE/ ST

Standby

2

3

4

GND

OUT

VDD

Power

Output

Power

Open

[2]

:

Functionality

H or

specified frequency output

L: output is high impedance. Only output driver is disabled.

H or Open

[2]

: specified frequency output

L: output is low (weak pull down). Device goes to sleep mode. Supply

current reduces to I_std.

Electrical ground

[3]

Oscillator output

Power supply voltage

[3]

GND

2

3

Top View

OE/ST

1

4

VDD

OUT

Notes:

2. A pull-up resistor of <10 kΩ between OE/ ST pin and Vdd is recommended in high noise environment.

3. A capacitor of value 0.1 µF between Vdd and GND is recommended.

Absolute Maximum

Attempted operation outside the absolute maximum ratings of the part may cause permanent damage to the part. Actual perfor-

mance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings.

Parameter

Storage Temperature

VDD

Electrostatic Discharge

Soldering Temperature (follow standard Pb free soldering guidelines)

Junction Temperature

Min.

-65

-0.5

–

Max.

150

4

2000

260

150

Unit

°C

V

°C

Thermal Consideration

Package

7050

5032

3225

2520



JA, 4 Layer Board

(°C/W)

191

97

109

117



JA, 2 Layer Board

(°C/W)

263

199

212

222



JC, Bottom

(°C/W)

30

24

27

26

Environmental Compliance

Parameter

Mechanical Shock

Mechanical Vibration

Temperature Cycle

Solderability

Moisture Sensitivity Level

Condition/Test Method

MIL-STD-883F, Method 2002

MIL-STD-883F, Method 2007

JESD22, Method A104

MIL-STD-883F, Method 2003

MSL1 @ 260°C

Rev. 1.02

Page 2 of 10

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SiT8208

Ultra Performance Oscillator

The Smart Timing Choice

Phase Noise Plot

-100

-110

-120

-130

-140

-150

-160

-170

3

10

Integrated random phase jitter (RMS, 12kHz-5MHz): 0.52ps

Phase Noise (dBc/Hz)

10

4

10

Frequency Offset (Hz)

5

10

6

Figure 1. Phase Noise, 10 MHz, 3.3V, LVCMOS Output

Test Circuit and Waveform

Vdd

Vout

Test

Point

tr

4

Power

Supply

0.1µF

3

tf

90% Vdd

1

2

15pF

(including probe

and fixture

capacitance)

50%

10% Vdd

High Pulse

(TH)

Period

Low Pulse

(TL)

OE/ST Function

Vdd

1k



Figure 2. Test Circuit

Figure 3. Waveform

Notes:

4. Duty Cycle is computed as Duty Cycle = TH/Period.

5. SiT8208 supports the configurable duty cycle feature. For custom duty cycle at any given frequency, contact

SiTime.

Rev. 1.02

Page 3 of 10

www.sitime.com

SiT8208

Ultra Performance Oscillator

The Smart Timing Choice

Timing Diagram

90% Vdd, 2.5/2,8/3.3V devices

Vdd

95% Vdd, 1.8V devices

Vdd

Pin 4 Voltage

NO Glitch first cycle

ST Voltage

50% Vdd

T_resume

CLK Output

T_start

CLK Output

T_start: Time to start from power-off

T_resume: Time to resume from ST

Figure 4. Startup Timing (OE/ST Mode)

u

Vdd

50% Vdd

T_OE

CLK Output

Figure 5. Standby Resume Timing (ST Mode Only)

OE Voltage

Vdd

OE Voltage

50% Vdd

CLK Output

T_OE

HZ

T_OE: Time to re-enable the clock output

T_OE: Time to put the output drive in High Z mode

Figure 6. OE Enable Timing (OE Mode Only)

Figure 7. OE Disable Timing (OE Mode Only)

Notes:

6. SiT8208 supports NO RUNT pulses and No glitches during startup or resume.

7. SiT8208 supports gated output which is accurate within rated frequency stability from the first cycle.

Rev. 1.02

Page 4 of 10

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SiT8208

Ultra Performance Oscillator

The Smart Timing Choice

Performance Plots

3.3V

40.0

38.0

34.0

2.5V

1.8V

3.3V

3.00

2.50

2.00

1.50

1.00

0.50

0.00

10

2.5V

1.8V

Idd, mA

32.0

30.0

28.0

26.0

24.0

22.0

20.0

10

20

30

40

50

60

70

80

RMS Period jitter, ps

36.0

20

30

40

50

60

70

80

Frequency, MHz

Figure 8. Idd vs Frequency

Figure 9. RMS Period Jitter vs Frequency

3.3V

55.0

54.0

2.5V

1.8V

1

0.9

2.5V

3.3V

1.8V

Duty cycle, %

52.0

51.0

50.0

49.0

48.0

47.0

46.0

45.0

10

20

30

40

50

60

70

80

RMS Phase jitter, ps

53.0

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0

10

20

30

40

50

60

70

80

Frequency, MHz

Figure 10. Duty Cycle vs Frequency

Figure 11. RMS Phase Jitter vs Frequency

1.8V

35

33

31

29

27

25

-40

2.5V

3.3V

2.0

1.8V

2.5V

3.3V

Rise Time, ns

-20

0

20

40

60

80

1.5

Idd, mA

1.0

0.5

0.0

-40

-20

0

20

40

60

80

Temperature, °C

Figure 12. Idd vs Temperature, 10 MHz Output

Figure 13. Rise Time vs Temperature, 75 MHz Output

Note:

8. All plots are measured with 15 pF load at room temperature, unless otherwise stated.

Rev. 1.02

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SIT8208AI-GF-25S-12.800000Y

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