NTE49 (NPN) & NTE50 (PNP)
Silicon Complementary Transistors
General Purpose, High Voltage Amp, Driver
Description:
The NTE49 (NPN) and NTE50 (PNP) are silicon complementary transistors in a TO202 type case
designed for general purpose, high voltage amplifier and driver applications.
Features:
D
High Collector Breakdown Voltage: V
(BR)CEO
= 100V Min @ I
C
= 1mA
D
High Power Dissipation: P
D
= 10W @ T
C
= +25°C
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Collector–Base Voltage, V
CB
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
Emitter–Base Voltage, V
EB
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Continuous Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Total Power Dissipation (T
A
= +25°C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8mW/°C
Total Power Dissipation (T
C
= +25°C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80mW/°C
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Thermal Resistance, Junction–to–Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.5°C/W
Thermal Resistance, Junction–to–Ambient, R
thJA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125°C/W
Note 1.
NTE49
is a
discontinued
device and
no longer available.
Electrical Characteristics:
(T
A
= +25°C unless otherwise specified)
Parameter
OFF Characteristics
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
ON Characteristics
(Note 2)
DC Current Gain
h
FE
I
C
= 50mA, V
CE
= 1V
I
C
= 250mA, V
CE
= 1V
I
C
= 500mA, V
CE
= 1V
Collector–Emitter Saturation Voltage
Base–Emitter ON Voltage
Small–Signal Characteristics
Current Gain–Bandwidth Product
Output Capacitance
f
T
C
ob
I
C
= 250mA, V
CE
= 5V,
f = 100MHz, Note 1
V
CB
= 10V, I
E
= 0, f = 100kHz
50
–
150
6
–
12
MHz
pF
V
CE(sat)
V
BE(on)
I
C
= 250mA, I
B
= 10mA
I
C
= 250mA, I
B
= 25mA
I
C
= 250mA, V
CE
= 5V
80
60
–
–
–
–
125
100
55
0.18
0.1
0.74
–
–
–
0.4
–
1.2
V
V
V
V
(BR)CEO
I
C
= 1mA, I
B
= 0
V
(BR)EBO
I
E
= 100µA, I
C
= 0
I
CBO
V
CB
= 40V, I
E
= 0
100
4
–
–
–
–
–
–
100
V
V
nA
Symbol
Test Conditions
Min
Typ Max Unit
Note 2. Pulse Test: Pulse Width
≤
300µs, Duty Cycle
≤
2%.
.380 (9.56)
.180 (4.57)
C
.132 (3.35) Dia
.500
(12.7)
1.200
(30.48)
Ref
.325
(9.52)
.300
(7.62)
.070 (1.78) x 45°
Chamf
.050 (1.27)
.400
(10.16)
Min
E
B
C
.100 (2.54)
.100 (2.54)
Embedded System
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