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BC848

Description
TRANSISTOR 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, BIP General Purpose Small Signal
CategoryThe transistor   
File Size261KB,4 Pages
ManufacturerNational Semiconductor(TI )
Websitehttp://www.ti.com
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BC848 Overview

TRANSISTOR 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, BIP General Purpose Small Signal

BC848 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNational Semiconductor(TI )
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Other featuresLOW NOISE
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)110
JEDEC-95 codeTO-236AB
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.3 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)300 MHz
Base Number Matches1

BC848 Related Products

BC848 MMBT5086 BCX71
Description TRANSISTOR 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, BIP General Purpose Small Signal TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, BIP General Purpose Small Signal TRANSISTOR 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, BIP General Purpose Small Signal
Is it Rohs certified? incompatible incompatible incompatible
Maker National Semiconductor(TI ) National Semiconductor(TI ) National Semiconductor(TI )
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code compliant unknown unknow
ECCN code EAR99 EAR99 EAR99
Other features LOW NOISE LOW NOISE LOW NOISE
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A
Collector-emitter maximum voltage 30 V 50 V 45 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 110 150 120
JEDEC-95 code TO-236AB TO-236AB TO-236AB
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
JESD-609 code e0 e0 e0
Number of components 1 1 1
Number of terminals 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type NPN PNP PNP
Maximum power dissipation(Abs) 0.3 W 0.225 W 0.15 W
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 300 MHz 40 MHz 125 MHz
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