NTE54 (NPN) & NTE55 (PNP)
Silicon Complementary Transistors
High Frequency Driver for Audio Amplifier
Description:
The NTE54 (NPN) and NTE55 (PNP) are silicon complementary transistors in a TO220 type case
designed for use as a high frequency driver in audio amplifier applications.
Features:
D
DC Current Gain Specified to 4A:
h
FE
= 40 Min @ I
C
= 3A
= 20 MIn @ I
C
= 4A
D
Collector–Emitter Sustaining Voltage: V
CEO(sus)
= 150V Min
D
High Current Gain–Bandwidth Product: f
T
= 30MHz Min @ I
C
= 500mA
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V
Emitter–Base Voltage, V
EB)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, I
C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A
Total Power Dissipation (T
C
= +25°C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.04W/°C
Total Power Dissipation (T
A
= +25°C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.016W/°C
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +2.5°C/W
Thermal Resistance, Junction–to–Ambient, R
thJA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +62.5°C/W
Note 1. Matched complementary pairs are available upon request (NTE55MCP). Matched comple-
mentary pairs have their gain specification (h
FE
) matched to within 10% of each other.
Electrical Characteristics:
(T
A
= +25°C unless otherwise specified)
Parameter
OFF Characteristics
Collector–Emitter Sustaining Voltage
Collector Cutoff Current
V
CE(sus)
I
CEO
I
CBO
Emitter Cutoff Current
ON Characteristics
(Note 2)
DC Current Gain
h
FE
V
CE
= 2V, I
C
= 0.1A
V
CE
= 2V, I
C
= 2A
V
CE
= 2V, I
C
= 0.1A
V
CE
= 2V, I
C
= 0.1A
DC Current Gain Linearity
h
FE
V
CE
from 2V to 20V,
I
C
from 0.1A to 3A
NPN to PNP
Collector–Emitter Saturation Voltage
Base–Emitter ON Voltage
Dynamic Characteristics
Current Gain–Bandwidth Product
f
t
V
CE
= 10V, I
C
= 500mA,
f
test
= 10MHz, Note 3
30
–
–
MHz
V
CE(sat)
V
BE(on)
I
C
= 1A, I
B
= 0.1A
V
CE
= 2V, I
C
= 1A
40
40
40
20
–
–
–
–
–
–
–
–
2
3
–
–
–
–
–
–
–
–
0.5
1
V
V
I
EBO
I
C
= 10mA, I
B
= 0, Note 2
V
CE
= 150V, I
B
= 0
V
CE
= 150V, I
E
= 0
V
CE
= 150V, I
C
= 0
150
–
–
–
–
–
–
–
–
0.1
10
10
V
mA
µA
µA
Symbol
Test Conditions
Min
Typ
Max
Unit
Note 2. Pulse Test: Pulse Width
≤
300µs, Duty Cycle
≤
2%.
Note 3. f
T
= |h
fe
|
f
test
.420 (10.67)
Max
.110 (2.79)
.147 (3.75)
Dia Max
.500
(12.7)
Max
.250 (6.35)
Max
.500
(12.7)
Min
.070 (1.78) Max
Base
.100 (2.54)
Emitter
Collector/Tab
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