STTH3R02
Ultrafast recovery diode
Datasheet
-
production data
Table 1. Device summary
A
K
I
F(AV)
V
RRM
3A
200 V
175 °C
0.7 V
16 ns
A
K
DO-201AD
STTH3R02
A
K
DO-15
STTH3R02Q
T
j
(max)
V
F
(typ)
t
rr
(typ)
A
K
SMC
STTH3R02S
Features
•
Very low conduction losses
•
Negligible switching losses
•
Low forward and reverse recovery times
•
High junction temperature
Description
The STTH3R02 uses ST's new 200 V planar Pt
doping technology, and it is specially suited for
switching mode base drive and transistor circuits.
Packaged in DO-201AD, DO-15, and SMC, this
device is intended for use in low voltage, high
frequency inverters, free wheeling and polarity
protection.
April 2014
This is information on a product in full production.
DocID12359 Rev 3
1/9
www.st.com
Characteristics
STTH3R02
1
Characteristics
Table 2. Absolute ratings (limiting values at T
j
= 25 °C, unless otherwise specified)
Symbol
V
RRM
I
FRM
I
F(RMS)
Parameter
Repetitive peak reverse voltage
Repetitive peak forward current
Forward rms current
SMC
DO-15 T
lead
= 50 °C
I
F(AV)
Average forward current,
δ
= 0.5
DO-201AD T
lead
= 90 °C
SMC T
c
= 110 °C
I
FSM
T
stg
T
j
T
L
Surge non repetitive forward current t
p
= 10 ms Sinusoidal
Storage temperature range
Maximum operating junction temperature
Maximum lead temperature for soldering during 10 s at 4 mm from
case
75
-65 to + 175
175
230
A
°C
°C
°C
3
A
70
t
p
= 5 µs, F = 5 kHz
DO-201AD / DO-15
Value
200
110
70
A
Unit
V
A
Table 3. Thermal parameters
Symbol
R
th(j-l)
R
th(j-c)
Junction to lead
Junction to case
Parameter
Lead Length = 10 mm on infinite DO-15
heatsink
DO-201AD
SMC
Value
45
30
20
°C/W
Unit
Table 4. Static electrical characteristics
Symbol
I
R(1)
Parameter
Reverse leakage
current
Test conditions
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
V
F(2)
Forward voltage drop
T
j
= 25 °C
T
j
= 100 °C
T
j
= 150 °C
1. Pulse test: t
p
= 5 ms,
δ
< 2 %
2. Pulse test: t
p
= 380 µs,
δ
< 2 %
Min.
Typ.
Max.
3
Unit
µA
V
R
= V
RRM
I
F
= 9 A
3
30
1.20
0.89
I
F
= 3 A
0.76
0.70
1.0
V
0.85
0.80
To evaluate the conduction losses use the following equation:
P = 0.68 x I
F(AV)
+ 0.04 I
F2(RMS)
2/9
DocID12359 Rev 3
STTH3R02
Table 5. Dynamic characteristics
Symbol
Parameter
Test conditions
I
F
= 1 A, dI
F
/dt = -50 A/µs,
V
R
= 30 V, T
j
= 25 °C
I
F
= 1 A, dI
F
/dt = -100 A/µs,
V
R
= 30 V, T
j
= 25 °C
Reverse recovery current
Forward recovery time
Forward recovery voltage
I
F
= 3 A, dI
F
/dt = -200 A/µs,
V
R
= 160 V, T
j
= 125 °C
I
F
= 3 A, dI
F
/dt = 100 A/µs
V
FR
= 1.1 x V
Fmax
, T
j
= 25 °C
I
F
= 3 A, dI
F
/dt = 100 A/µs,
T
j
= 25 °C
Min.
Typ.
24
16
3.5
40
1.9
Characteristics
Max.
30
Unit
t
rr
Reverse recovery time
ns
20
4.5
A
ns
V
I
RM
t
fr
V
FP
Figure 1. peak current versus duty cycle
I
M
(A)
100
T
I
M
Figure 2. Forward voltage drop versus forward
current (typical values)
I
FM
(A)
50
80
δ
d
=tp/T
tp
40
60
P = 10 W
30
40
P=5W
P=3W
20
20
10
T
j
=150°C
T
j
=25°C
0
0.0
δ
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
FM
(V)
0
0.0
0.5
1.0
1.5
2.0
Figure 3. Forward voltage drop versus forward
current (maximum values)
Figure 4. Relative variation of thermal
impedance junction to ambient versus pulse
duration - DO-201AD
Z
th(j-a)
/R
th(j-a)
1.0
0.9
Epoxy printed circuit board FR4, e
CU
= 35 µm
DO-201AD
L
leads
=10 mm
I
FM
(A)
50
40
0.8
0.7
30
0.6
0.5
20
T
j
=150°C
0.4
0.3
T
j
=25°C
10
0.2
V
FM
(V)
0
0.0
0.5
1.0
1.5
2.0
0.1
0.0
1.E-01
Single pulse
t
P
(s)
1.E+00
1.E+01
1.E+02
1.E+03
DocID12359 Rev 3
3/9
9
Characteristics
STTH3R02
Figure 5. Relative variation of thermal
impedance junction to ambient versus pulse
duration - DO-15
Z
th(j-a)
/R
th(j-a)
(j-a)
1.0
Epoxy printed circuit board FR4, e
CU
= 35 µm
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.E-01
Single pulse
DO-15
L
leads
=10 mm
Figure 6. Relative variation of thermal
impedance junction to ambient versus pulse
duration - SMC
Z
th(j-a)
/R
th(j-a)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
Single pulse
Epoxy printed circuit board FR4, e
CU
= 35 µm
SMC
S
cu
=1 cm²
t
P
(s)
0.0
t
P
(s)
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
1.E+00
1.E+01
1.E+02
1.E+03
1.E-03
Figure 7. Junction capacitance versus reverse
applied voltage (typical values)
C(pF)
100
F=1MHz
V
osc
=30mV
RMS
T
j
=25°C
Figure 8. Reverse recovery charges versus
dI
F
/dt (typical values)
Q
RR
(nC)
80
70
60
50
I
F
=3A
V
R
=160V
10
40
30
20
10
V
R
(V)
T
j
=125°C
T
j
=25°C
dI
F
/dt(A/µs)
10
100
1000
1
1
10
100
1000
0
Figure 9. Reverse recovery time versus dI
F
/dt
(typical values)
t
RR
(ns)
60
I
F
=3A
V
R
=160V
Figure 10. Peak reverse recovery current
versus dI
F
/dt (typical values)
I
RM
(A)
8
7
6
I
F
=3A
V
R
=160V
50
40
5
T
j
=125°C
30
T
j
=25°C
4
T
j
=125°C
20
3
2
10
1
T
j
=25°C
dI
F
/dt(A/µs)
0
10
100
1000
0
10
100
dI
F
/dt(A/µs)
1000
4/9
DocID12359 Rev 3
STTH3R02
Ordering information scheme
Figure 11. Dynamic parameters versus junction
Figure 12. Thermal resistance junction to
temperature
ambient versus copper surface under each lead
Q
RR
; I
RM
[T
j
] / Q
RR
; I
RM
[T
j
=125°C]
1.4
1.2
1.0
0.8
0.6
Q
RR
I
RM
I
F
=3A
V
R
=160V
R
th(j-a)
(°C/W)
100
90
80
70
60
50
DO-201AD
DO-15
Epoxy printed circuit board FR4, e
CU
= 35 µm
40
30
20
0.4
0.2
T
j
(°C)
0.0
25
50
75
100
125
150
10
S
Cu
(cm²)
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Figure 13. Thermal resistance versus copper
surface under each lead for SMC
R
th(j-a)
(°C/W)
100
Epoxy printed circuit board FR4, e
CU
= 35 µm
SMC
Figure 14. Thermal resistance versus lead
length for DO-201AD package
R
th
(°C/W)
100
90
80
70
R
th(j-a)
DO-201AD
80
60
60
50
40
40
R
th(j-l)
30
20
S
CU
(cm²)
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
20
10
0
5
10
15
20
25
L
leads
(mm)
2
Ordering information scheme
Figure 15. Ordering information scheme
STTH
Ultrafast switching diode
Average forward current
3=3A
3 R
02 XXX
Model R
Repetitive peak reverse voltage
02 = 200 V
Package
Blank = DO-201 in Ammopack
RL = DO-201 in Tape and reel
Q = DO-15 in Ammopack
QRL = DO-15 in Tape and reel
S= SMC in Tape and reel
DocID12359 Rev 3
5/9
9
京公网安备 11010802033920号
EEWORLD
