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IDC51D120T6MX1SA3

Description
DIODE GEN PURP 1.2KV 100A WAFER
CategoryDiscrete semiconductor    diode   
File Size58KB,4 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

IDC51D120T6MX1SA3 Overview

DIODE GEN PURP 1.2KV 100A WAFER

IDC51D120T6MX1SA3 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
package instructionR-XUUC-N1
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time13 weeks
applicationFAST SOFT RECOVERY
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)2.05 V
JESD-30 codeR-XUUC-N1
Number of components1
Phase1
Number of terminals1
Maximum operating temperature175 °C
Minimum operating temperature-40 °C
Maximum output current100 A
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formUNCASED CHIP
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage1200 V
Maximum reverse current18 µA
surface mountYES
Terminal formNO LEAD
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
IDC51D120T6M
Diode EMCON 4 Medium Power Chip
FEATURES:
1200V EMCON 4 technology
soft, fast switching
low reverse recovery charge
small temperature coefficient
A
This chip is used for:
low / medium power modules
C
Applications:
low / medium power drives
Chip Type
IDC51D120T6M
V
R
I
F
Die Size
7.00 x 7.30 mm
2
Package
sawn on foil
1200V 100A
MECHANICAL PARAMETER:
Raster size
Area total / active
Anode pad size
Thickness
Wafer size
Flat position
Max. possible chips per wafer
Passivation frontside
Pad metall
Backside metall
Die bond
Wire bond
Reject ink dot size
Recommended storage environment
7.00 x 7.30
51.10 / 39.99
6.046 x 6.346
110
150
180
277 pcs
Photoimide
3200 nm AlSiCu
Ni Ag –system
suitable for epoxy and soft solder die bonding
electrically conductive glue or solder
Al,
≤500µm
0.65mm; max 1.2mm
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
µm
mm
deg
mm
2
Edited by INFINEON Technologies, AIM PMD D CID T, L4673B, Edition 0.9, 23.11.06

IDC51D120T6MX1SA3 Related Products

IDC51D120T6MX1SA3 IDC51D120T6M
Description DIODE GEN PURP 1.2KV 100A WAFER Rectifier Diode, 1 Phase, 1 Element, 100A, 1200V V(RRM), Silicon, DIE-1
Is it Rohs certified? conform to conform to
Maker Infineon Infineon
package instruction R-XUUC-N1 R-XUUC-N1
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
application FAST SOFT RECOVERY FAST SOFT RECOVERY
Configuration SINGLE SINGLE
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 2.05 V 2.05 V
JESD-30 code R-XUUC-N1 R-XUUC-N1
Number of components 1 1
Phase 1 1
Number of terminals 1 1
Maximum operating temperature 175 °C 175 °C
Minimum operating temperature -40 °C -40 °C
Maximum output current 100 A 100 A
Package body material UNSPECIFIED UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR
Package form UNCASED CHIP UNCASED CHIP
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Maximum repetitive peak reverse voltage 1200 V 1200 V
Maximum reverse current 18 µA 18 µA
surface mount YES YES
Terminal form NO LEAD NO LEAD
Terminal location UPPER UPPER
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
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