UNISONIC TECHNOLOGIES CO., LTD
3N60
3 Amps, 600/650 Volts
N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 3N60 is a high voltage and high current power
MOSFET , designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and have
a high rugged avalanche characteristics. This power MOSFET is
usually used at high speed switching applications in power
supplies, PWM motor controls, high efficient DC to DC converters
and bridge circuits.
1
TO-220
Power MOSFET
FEATURES
* R
DS(ON)
= 3.6Ω @V
GS
= 10 V
* Ultra low gate charge ( typical 10 nC )
* Low reverse transfer capacitance ( C
RSS
= typical 5.5 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
*Pb-free plating product number: 3N60L
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
3N60-x-TA3-T
3N60L-x-TA3-T
Package
TO-220
Pin Assignment
1
2
3
G
D
S
Packing
Tube
3N60L-x-TA3-T
(1)Packing Type
(2)Package Type
(3)Drain-Source Voltage
(4)Lead Plating
(1) T: Tube
(2) TA3: TO-220
(3) A: 600V, B: 650V
(4) L: Lead Free Plating Blank: Pb/Sn
,
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1 of 8
QW-R502-110,A
3N60
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25℃, unless otherwise specified)
PARAMETER
SYMBOL
Power MOSFET
RATINGS
UNIT
3N60-A
600
V
Drain-Source Voltage
V
DSS
3N60-B
650
V
Gate-Source Voltage
V
GSS
±30
V
Avalanche Current - (Note 1)
I
AR
3.0
A
T
C
= 25°C
3.0
A
Continuous Drain Current
I
D
T
C
= 100°C
1.9
A
Pulsed Drain Current, T
P
Limited by T
JMAX
- (Note 1)
I
DM
12
A
Avalanche Energy, Single Pulsed (Note 2)
E
AS
200
mJ
Avalanche Energy, Repetitive, Limited by T
JMAX
E
AR
7.5
mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.5
V/ns
Power Dissipation
P
D
75
W
Junction Temperature
T
J
+150
℃
Storage Temperature
T
STG
-55 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction-to-Case
Junction-to-Ambient
SYMBOL
θ
JC
θ
JA
TYP
MAX
1.67
62.5
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
=25℃, unless otherwise specified)
PARAMETER
Off Characteristics
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse
3N60-A
3N60-B
SYMBOL
BV
DSS
I
DSS
I
GSS
TEST CONDITIONS
V
GS
= 0 V, I
D
= 250 µA
V
DS
= 600 V, V
GS
= 0 V
V
DS
= 480 V, T
C
= 125°C
V
GS
= 30 V, V
DS
= 0 V
V
GS
= -30 V, V
DS
= 0 V
0.6
2.0
2.8
350
50
5.5
10
30
20
30
10
2.7
4.9
4.0
3.6
450
65
7.5
30
70
50
70
13
MIN TYP MAX UNIT
600
650
10
100
100
-100
V
V
µA
µA
nA
nA
V/℃
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Breakdown Voltage Temperature
Coefficient
On Characteristics
Gate Threshold Voltage
Drain-Source On-State Resistance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
△
BV
DSS
/△T
J
I
D
= 250 µA, Referenced to 25°C
V
GS(TH)
R
DS(ON)
C
ISS
C
OSS
C
RSS
t
D(ON)
t
R
t
D(OFF)
t
F
Q
G
Q
GS
Q
DD
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 1.5A
V
DS
= 25 V, V
GS
= 0 V, f = 1MHz
V
DD
= 300V, I
D
= 3.0 A, R
G
= 25Ω
(Note 4, 5)
V
DS
= 480V,I
D
= 3.0A, V
GS
= 10 V
(Note 4, 5)
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2 of 8
QW-R502-110,A
3N60
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
Source- Drain Diode Ratings and Characteristics
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0 V, I
S
= 3.0 A
Maximum Continuous Drain-Source
I
S
Diode Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Reverse Recovery Time
t
RR
V
GS
= 0 V, I
S
= 3.0 A,
dI
F
/dt = 100 A/µs (Note 4)
Reverse Recovery Charge
Q
RR
Notes: 1. Repetitive Rating : Pulse width limited by T
J
2. L = 40mH, I
AS
= 3.0A, V
DD
= 50V, R
G
= 25
Ω,
Starting T
J
= 25°C
3. I
SD
≤
3.0A, di/dt
≤200A/µs,
V
DD
≤
BV
DSS
, Starting T
J
= 25°C
4. Pulse Test: Pulse width
≤
300µs, Duty cycle
≤
2%
5. Essentially independent of operating temperature
Power MOSFET
MIN
TYP MAX UNIT
1.4
3.0
12
210
1.2
V
A
A
ns
µC
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QW-R502-110,A
3N60
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
D.U.T.
+
V
DS
-
+
-
L
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
P.W.
Period
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv
/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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4 of 8
QW-R502-110,A
3N60
TEST CIRCUITS AND WAVEFORMS (Cont.)
R
L
V
DD
Power MOSFET
V
DS
V
GS
R
G
V
DS
90%
10V
Pulse Width
≤
1μs
Duty Factor
≤0.1%
D.U.T.
V
GS
10%
t
D(ON )
t
R
t
D (OFF)
t
F
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
50kΩ
12V
0.2μF
0.3μF
Same Type
as D.U.T.
10V
V
DS
Q
GS
Q
G
Q
GD
V
GS
DUT
3mA
V
GS
Charge
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L
V
DS
BV
DSS
R
D
V
DD
D.U.T.
10V
t
p
I
AS
t
p
Time
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
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5 of 8
QW-R502-110,A
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