3N252 datasheet, PDF - EEWORLD Datasheet

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3N252: Description1.5 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE; CategoryDiscrete semiconductor diode; File Size39KB，3 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/; Environmental Compliance

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3N252 Overview

1.5 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE

3N252 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Fairchild
package instruction	R-PSIP-W4
Contacts	4
Reach Compliance Code	compli
Other features	UL RECOGNIZED
Minimum breakdown voltage	1000 V
Configuration	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1.3 V
JESD-30 code	R-PSIP-W4
JESD-609 code	e3
Maximum non-repetitive peak forward current	50 A
Number of components	4
Phase	1
Number of terminals	4
Maximum operating temperature	150 °C
Maximum output current	1.5 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT APPLICABLE
Maximum power dissipation	3.5 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	1000 V
surface mount	NO
Terminal surface	Bright Tin (Sn)
Terminal form	WIRE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT APPLICABLE
Base Number Matches	1

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KBP005M/3N246 - KBP10M/3N252

Features

•

Surge overload rating: 50 amperes

peak.

Reliable low cost construction utilizing

molded plastic technique.

UL certified, UL #E111753.

~ ~

KBPM

Bridge Rectifiers

Absolute Maximum Ratings*

Symbol

RRM

RMS

F(AV)

FSM

stg

= 25°C unless otherwise noted

Value

Parameter

Maximum Repetitive Reverse Voltage

Maximum RMS Bridge Input Voltage

DC Reverse Voltage

(Rated V

)

Average Rectified Forward Current,

@ T

= 50°C

Non-repetitive Peak Forward Surge Current

Storage Temperature Range

Operating Junction Temperature

005M

246

01M

247

100

02M

248

200

140

200

04M

249

400

280

400

1.5

-55 to +165

06M

250

600

420

600

08M

251

800

560

800

10M

252

1000

700

1000

Units

°C

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Thermal Characteristics

Symbol

θJA

Power Dissipation

Thermal Resistance, Junction to Ambient,* per leg

Parameter

Value

3.5

Units

°C/W

Device mounted on PCB with 0.47 x 0.47" (12 x 12 mm).

Electrical Characteristics

Symbol

= 25°C unless otherwise noted

Parameter

Forward Voltage, per bridge @ 1.0 A

@ 3.14 A

Reverse Current, total bridge @ rated V

= 25°C

= 100°C

I t rating for fusing

t < 8.35 ms

Total Capacitance, per leg

= 4.0 V, f = 1.0 MHz

Device

1.0

1.3

5.0

500

Units

µA

2001

Fairchild Semiconductor Corporation

KBP005M/3N246-KBP10M/3N252, Rev. C

3N252 Related Products

	3N252	KBP005M_01	KBP02M	KBP10M	74VCX00	3N250	3N248	3N247	3N246
Description	1.5 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE	1.5 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE	1.5 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE	1.5 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE	Low Voltage Quad 2-Input NAND Gate	1.5 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE	1 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE	1.5 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE	1.5 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE
Is it Rohs certified?	conform to	-	conform to	conform to	-	conform to	conform to	conform to	conform to
package instruction	R-PSIP-W4	-	R-PSIP-W4	R-PSIP-W4	-	R-PSIP-W4	R-PSIP-W4	R-PSIP-W4	PLASTIC, KBPM, 4 PIN
Contacts	4	-	4	4	-	4	4	4	4
Reach Compliance Code	compli	-	_compli	_compli	-	_compli	_compli	_compli	_compli
Other features	UL RECOGNIZED	-	UL RECOGNIZED	UL RECOGNIZED	-	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED
Minimum breakdown voltage	1000 V	-	200 V	1000 V	-	600 V	200 V	100 V	50 V
Configuration	BRIDGE, 4 ELEMENTS	-	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	-	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON	-	SILICON	SILICON	-	SILICON	SILICON	SILICON	SILICON
Diode type	BRIDGE RECTIFIER DIODE	-	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	-	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1.3 V	-	1 V	1 V	-	1.3 V	1.3 V	1.3 V	1.3 V
JESD-30 code	R-PSIP-W4	-	R-PSIP-W4	R-PSIP-W4	-	R-PSIP-W4	R-PSIP-W4	R-PSIP-W4	R-PSIP-W4
JESD-609 code	e3	-	e3	e3	-	e3	e3	e3	e3
Maximum non-repetitive peak forward current	50 A	-	50 A	50 A	-	50 A	50 A	50 A	50 A
Number of components	4	-	4	4	-	4	4	4	4
Phase	1	-	1	1	-	1	1	1	1
Number of terminals	4	-	4	4	-	4	4	4	4
Maximum operating temperature	150 °C	-	165 °C	165 °C	-	165 °C	165 °C	165 °C	165 °C
Maximum output current	1.5 A	-	1.5 A	1.5 A	-	1.5 A	1.5 A	1.5 A	1.5 A
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	-	IN-LINE	IN-LINE	-	IN-LINE	IN-LINE	IN-LINE	IN-LINE
Peak Reflow Temperature (Celsius)	NOT APPLICABLE	-	NOT APPLICABLE	NOT APPLICABLE	-	NOT APPLICABLE	NOT APPLICABLE	NOT APPLICABLE	NOT APPLICABLE
Maximum power dissipation	3.5 W	-	3.5 W	3.5 W	-	3.5 W	3.5 W	3.5 W	3.5 W
Certification status	Not Qualified	-	Not Qualified	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	1000 V	-	200 V	1000 V	-	600 V	200 V	100 V	50 V
surface mount	NO	-	NO	NO	-	NO	NO	NO	NO
Terminal surface	Bright Tin (Sn)	-	Matte Tin (Sn)	Matte Tin (Sn)	-	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)
Terminal form	WIRE	-	WIRE	WIRE	-	WIRE	WIRE	WIRE	WIRE
Terminal location	SINGLE	-	SINGLE	SINGLE	-	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT APPLICABLE	-	NOT APPLICABLE	NOT APPLICABLE	-	NOT APPLICABLE	NOT APPLICABLE	NOT APPLICABLE	NOT APPLICABLE
Minimum operating temperature	-	-	-55 °C	-55 °C	-	-55 °C	-55 °C	-55 °C	-55 °C

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