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3KP17

Description
3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE
CategoryDiscrete semiconductor    diode   
File Size219KB,3 Pages
ManufacturerSEMIKRON
Websitehttp://www.semikron.com
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3KP17 Overview

3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE

3KP17 Parametric

Parameter NameAttribute value
MakerSEMIKRON
package instructionO-PALF-W2
Contacts2
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum breakdown voltage23.1 V
Minimum breakdown voltage18.9 V
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak reverse power dissipation3000 W
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-50 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
polarityUNIDIRECTIONAL
Maximum power dissipation8 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage17 V
surface mountNO
technologyAVALANCHE
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
3 KP 5,0 ... 3 KP 120CA
Absolute Maximum Ratings
Symbol Conditions
Values
Units
Axial lead diode
Unidirectional and
bidirectional Transient
Voltage Suppressor
diodes
3 KP 5,0 ... 3 KP120CA
Pulse Power
Dissipation: 3000 W
Maximum Stand-off
voltage: 5,0 ... 120 V
Features
Mechanical Data
1)
2)
3)
1
12-03-2007 MAM
© by SEMIKRON

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Index Files: 251  1444  1897  11  2295  6  30  39  1  47 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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