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BLF7G27LS-100,118

Description
RF FET LDMOS 65V 18DB SOT502B
Categorysemiconductor    Discrete semiconductor   
File Size1MB,15 Pages
ManufacturerAmphenol
Websitehttp://www.amphenol.com/
Environmental Compliance
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BLF7G27LS-100,118 Overview

RF FET LDMOS 65V 18DB SOT502B

BLF7G27LS-100,118 Parametric

Parameter NameAttribute value
Transistor typeLDMOS
frequency2.5GHz ~ 2.7GHz
Gain18dB
Voltage - Test28V
Rated current28A
Noise Figure-
Current - Test900mA
Power - output20W
Voltage - Rated65V
Package/casingSOT-502B
Supplier device packagingSOT502B
BLF7G27L-100;
BLF7G27LS-100
Power LDMOS transistor
Rev. 5 — 1 December 2016
Product data sheet
1. Product profile
1.1 General description
100 W LDMOS power transistor for base station applications at frequencies from
2500 MHz to 2700 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C in a common source class-AB production test circuit.
Mode of operation
IS-95
Single carrier W-CDMA
[1]
[2]
f
(MHz)
I
Dq
(mA)
V
DS
(V)
28
28
P
L(AV)
(W)
20
25
G
p
(dB)
18
17.5
D
(%)
28
30
ACPR
885k
ACPR
5M
(dBc)
45
[1]
-
(dBc)
-
41
[2]
2500 to 2700 900
2500 to 2700 900
Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at
0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.
3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. Channel bandwidth is 3.84
MHz.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low R
th
providing excellent thermal stability
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for base stations and multi carrier applications in the
2500 MHz to 2700 MHz frequency range.

BLF7G27LS-100,118 Related Products

BLF7G27LS-100,118 BLF7G27L-100,112 BLF7G27L-100,118 BLF7G27LS-100,112
Description RF FET LDMOS 65V 18DB SOT502B RF FET LDMOS 65V 18DB SOT502A RF FET LDMOS 65V 18DB SOT502A RF FET LDMOS 65V 18DB SOT502B
Transistor type LDMOS LDMOS LDMOS LDMOS
frequency 2.5GHz ~ 2.7GHz 2.5GHz ~ 2.7GHz 2.5GHz ~ 2.7GHz 2.5GHz ~ 2.7GHz
Gain 18dB 18dB 18dB 18dB
Voltage - Test 28V 28V 28V 28V
Rated current 28A 28A 28A 28A
Current - Test 900mA 900mA 900mA 900mA
Power - output 20W 20W 20W 20W
Voltage - Rated 65V 65V 65V 65V
Package/casing SOT-502B SOT-502A SOT-502A SOT-502B
Supplier device packaging SOT502B LDMOST LDMOST SOT502B
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