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3GWJ42C

Description
3 A, 40 V, SILICON, RECTIFIER DIODE, DO-201AD
CategoryDiscrete semiconductor    diode   
File Size146KB,3 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

3GWJ42C Overview

3 A, 40 V, SILICON, RECTIFIER DIODE, DO-201AD

3GWJ42C Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeDO-201AD
package instructionO-PALF-W2
Contacts2
Reach Compliance Codeunknow
ECCN codeEAR99
applicationGENERAL PURPOSE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.55 V
JEDEC-95 codeDO-201AD
JESD-30 codeO-PALF-W2
JESD-609 codee0
Maximum non-repetitive peak forward current60 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature125 °C
Maximum output current3 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
Maximum repetitive peak reverse voltage40 V
Maximum reverse recovery time0.035 µs
surface mountNO
technologySCHOTTKY
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
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