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3EZ110

Description
110 V, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-15
CategoryDiscrete semiconductor    diode   
File Size108KB,2 Pages
ManufacturerDIOTEC
Websitehttp://www.diotec.com/
Environmental Compliance
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3EZ110 Overview

110 V, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-15

3EZ110 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeDO-15
package instructionO-PALF-W2
Contacts2
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
Maximum dynamic impedance80 Ω
JEDEC-95 codeDO-204AC
JESD-30 codeO-PALF-W2
Humidity sensitivity level1
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)260
polarityUNIDIRECTIONAL
Maximum power dissipation3 W
Certification statusNot Qualified
Nominal reference voltage110 V
surface mountNO
technologyZENER
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Maximum voltage tolerance5%
Working test current5 mA
Base Number Matches1
3EZ 1 … 3EZ 200 (3 W)
Silicon-Power-Z-Diodes
(non-planar technology)
Silizium-Leistungs-Z-Dioden
(flächendiffundierte Dioden)
Maximum power dissipation
Maximale Verlustleistung
Nominal Z-voltage – Nominale Z-Spannung
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Dimensions / Maße in mm
3W
1…200 V
DO-15
DO-204AC
0.4 g
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
see page 16
siehe Seite 16
Standard Zener voltage tolerance is graded to the international E 24 (~5%) standard.
Other voltage tolerances and higher Zener voltages on request.
Die Toleranz der Zener-Spannung ist in der Standard-Ausführung gestuft nach der
internationalen Reihe E 24 (~5%). Andere Toleranzen oder höhere Arbeitsspannungen auf
Anfrage.
Maximum ratings and Characteristics
Power dissipation – Verlustleistung
Non repetitive peak power dissipation, t < 10 ms
Einmalige Impuls-Verlustleistung, t < 10 ms
Operating junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Thermal resistance junction to lead
Wärmewiderstand Sperrschicht – Anschlußdraht
T
A
= 25
/
C
T
A
= 25
/
C
Grenz- und Kennwerte
P
tot
P
ZSM
T
j
T
S
R
thA
R
thL
3.0 W
1
)
60 W
– 50…+150
/
C
– 50…+175
/
C
< 40 K/W
1
)
< 15 K/W
Zener voltages see table on next page – Zener-Spannungen siehe Tabelle auf der nächsten Seite
1
) Valid, if leads are kept at ambient temperature at a distance of 10 mm from case
Gültig, wenn die Anschlußdrähte in 10 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
2
) Tested with pulses – Gemessen mit Impulsen
3
) The 3EZ 1is a diode, operated in forward. The cathode, indicated by a ring, is to be connected to the negative pole.
Die 3EZ 1 ist eine in Durchlaß betriebene Einzelchip-Diode.
Die durch den Ring gekennzeichnete Kathode ist mit dem Minuspol zu verbinden.
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