IRG7PH42UD2PbF
IRG7PH42UD2-EP
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE
FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
Features
•
•
•
•
•
•
•
•
Low V
CE (ON)
Trench IGBT Technology
Low Switching Losses
Square RBSOA
100% of the parts tested for 4X rated current (I
LM
)
Positive V
CE (ON)
Temperature co-efficient
Ultra-low V
F
Diode
Tight parameter distribution
Lead Free Package
C
V
CES
= 1200V
I
C
= 30A, T
C
= 100°C
G
E
V
CE(on)
typ. = 1.69V
n-channel
C
C
Benefits
• Device optimized for induction heating and soft switching
applications
• High Efficiency due to Low V
CE(on)
, Low Switching Losses
and Ultra-low V
F
• Rugged transient Performance for increased reliability
• Excellent Current sharing in parallel operation
• Low EMI
G
C
E
G
C
E
TO-247AC
IRG7PH42UD2PbF
TO-247AD
IRG7PH42UD2-EP
G
Gate
Base part number
IRG7PH42UD2PbF
IRG7PH42UD2-EP
Package Type
TO-247AC
TO-247AD
Standard Pack
Form
Tube
Tube
Quantity
25
25
C
Collector
E
Emitter
Orderable Part Number
IRG7PH42UD2PbF
IRG7PH42UD2-EP
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 100°C
I
FSM
I
FM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, V
GE
=15V
Clamped Inductive Load Current, V
GE
=20V
Max.
1200
60
30
90
120
Units
V
c
d
A
Diode Continous Forward Current
Diode Non Repetitive Peak Surge Current @ T
J
= 25°C
Diode Peak Repetitive Forward Current
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
10
170
90
±30
321
128
-55 to +150
°C
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
V
W
d
Thermal Resistance
Parameter
R
θJC
(IGBT)
R
θJC
(Diode)
R
θCS
R
θJA
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
40
Max.
0.39
0.82
–––
–––
Units
°C/W
1
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IRG7PH42UD2PbF/IRG7PH42UD2-EP
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)CES
V
(BR)Transient
ΔV
(BR)CES
/ΔT
J
Min.
1200
—
—
—
—
3.0
—
—
—
—
—
—
—
Typ.
—
—
1.18
1.69
2.07
—
-15
32
1.0
450
1.08
1.0
—
Max. Units
—
1300
—
2.02
—
6.0
—
—
150
1000
1.24
1.15
±100
V
V
Conditions
V
GE
= 0V, I
C
= 100μA
Collector-to-Emitter Breakdown Voltage
Repetitive Transient Collector-to-Emitter Voltage
V
GE
= 0V, T
J
=75°C, PW
≤
10μs
CT4
4,5,6
8,9,10
8,9
10,11
e
Ref.Fig
CT4
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Collector-to-Emitter Leakage Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
V
CE(on)
V
GE(th)
ΔV
GE(th)
/ΔTJ
V/°C V
GE
= 0V, I
C
= 1mA (25°C-150°C)
I
C
= 30A, V
GE
= 15V, T
J
= 25°C
V
I
C
= 30A, V
GE
= 15V, T
J
= 150°C
V
V
CE
= V
GE
, I
C
= 1.0mA
mV/°C V
CE
= V
GE
, I
C
= 1.0mA (25°C - 150°C)
S V
CE
= 50V, I
C
= 30A, PW = 60μs
μA
V
nA
V
GE
= 0V, V
CE
= 1200V
V
GE
= 0V, V
CE
= 1200V, T
J
= 150°C
I
F
= 10A
I
F
= 10A, T
J
= 150°C
V
GE
= ±30V
gfe
I
CES
V
FM
I
GES
7
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Q
ge
Q
gc
E
off
t
d(off)
t
f
E
off
t
d(off)
t
f
C
ies
C
oes
C
res
RBSOA
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-Off Switching Loss
Turn-Off delay time
Fall time
Turn-Off Switching Loss
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Min.
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
156
21
69
1320
233
64
2080
297
173
3338
124
75
Max. Units
234
32
104
1460
292
85
—
—
—
—
—
—
pF
μJ
nC
I
C
= 30A
V
GE
= 15V
V
CC
= 600V
Conditions
Ref.Fig
17
CT1
I
C
= 30A, V
CC
= 600V, V
GE
= 15V
R
G
= 10Ω, L = 200μH,T
J
= 25°C
Energy losses include tail
CT3
ns
I
C
= 30A, V
CC
= 600V, V
GE
= 15V
R
G
= 10Ω, L = 200μH,T
J
= 25°C
I
C
= 30A, V
CC
= 600V, V
GE
= 15V
R
G
= 10Ω, L = 200μH,T
J
= 150°C
Energy losses include tail
CT3
μJ
ns
I
C
= 30A, V
CC
= 600V, V
GE
= 15V
R
G
=10Ω, L=200μH, T
J
= 150°C
V
GE
= 0V
V
CC
= 30V
f = 1.0Mhz
T
J
= 150°C, I
C
= 120A
V
CC
= 960V, Vp =1200V
Rg = 10Ω, V
GE
= +15V to 0V
WF1
16
3
CT2
FULL SQUARE
Notes:
V
CC
= 80% (V
CES
), V
GE
= 20V, L = 200μH, R
G
= 10Ω.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
2
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IRG7PH42UD2PbF/IRG7PH42UD2-EP
70
60
50
Ptot (W)
350
300
250
200
150
100
50
0
IC (A)
40
30
20
10
0
0
25
50
75
T C (°C)
100
125
150
0
20
40
60
80
100 120 140 160
T C (°C)
Fig. 1
- Maximum DC Collector Current vs.
Case Temperature
1000
Fig. 2
- Power Dissipation vs. Case
Temperature
120
100
100
ICE (A)
80
60
40
20
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
IC (A)
10
1
10
100
VCE (V)
1000
10000
0
0
2
4
6
8
10
VCE (V)
Fig. 3
- Reverse Bias SOA
T
J
= 150°C; V
GE
=15V
120
100
80
ICE (A)
Fig. 4
- Typ. IGBT Output Characteristics
T
J
= -40°C; tp = 80μs
120
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
100
80
60
40
20
0
60
40
20
0
0
2
4
6
8
10
VCE (V)
0
2
4
6
8
10
VCE (V)
Fig. 5
- Typ. IGBT Output Characteristics
T
J
= 25°C; tp = 80μs
3
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2014 International Rectifier
Fig. 6
- Typ. IGBT Output Characteristics
T
J
= 150°C; tp = 80μs
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IRG7PH42UD2PbF/IRG7PH42UD2-EP
1000
14
12
100
10
VCE (V)
IF (A)
8
6
4
2
10
25°C
150°C
ICE = 15A
ICE = 30A
ICE = 60A
1
0.1
0.0
0.5
1.0
1.5
2.0
VF (V)
2.5
3.0
3.5
4.0
0
5
10
VGE (V)
15
20
Fig. 7
- Typ. Diode Forward Voltage Drop
Characteristics
14
12
10
VCE (V)
VCE (V)
14
12
10
Fig. 8
- Typical V
CE
vs. V
GE
T
J
= -40°C
8
6
4
2
0
5
10
VGE (V)
ICE = 15A
ICE = 30A
ICE = 60A
8
6
4
2
0
5
10
VGE (V)
ICE = 15A
ICE = 30A
ICE = 60A
15
20
15
20
Fig. 9
- Typical V
CE
vs. V
GE
T
J
= 25°C
120
ICE, Collector-to-Emitter Current (A)
4500
4000
3500
Fig. 10
- Typical V
CE
vs. V
GE
T
J
= 150°C
100
80
Energy (μJ)
EOFF
3000
2500
2000
1500
1000
60
40
20
0
4
6
8
10
12
VGE, Gate-to-Emitter Voltage (V)
T J = 25°C
T J = 150°C
0
25
IC (A)
50
75
Fig. 11
- Typ. Transfer Characteristics
V
CE
= 50V; tp = 10μs
4
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Fig. 12
- Typ. Energy Loss vs. I
C
T
J
= 150°C; L = 200μH; V
CE
= 600V, R
G
= 10Ω; V
GE
= 15V
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IRG7PH42UD2PbF/IRG7PH42UD2-EP
1000
6000
5500
5000
4500
EOFF
Swiching Time (ns)
tdOFF
Energy (μJ)
4000
3500
3000
2500
2000
1500
1000
tF
100
0
10
20
30
40
50
60
70
IC (A)
0
25
50
75
100
125
Rg (Ω)
Fig. 13
- Typ. Switching Time vs. I
C
T
J
= 150°C; L = 200μH; V
CE
= 600V, R
G
= 10Ω; V
GE
= 15V
10000
Fig. 14
- Typ. Energy Loss vs. R
G
T
J
= 150°C; L = 200μH; V
CE
= 600V, I
CE
= 30A; V
GE
= 15V
10000
Cies
tdOFF
1000
Swiching Time (ns)
1000
tF
Capacitance (pF)
100
Coes
Cres
10
100
10
0
20
40
60
RG (Ω)
80
100
120
1
0
100
200
300
VCE (V)
400
500
600
Fig. 15
- Typ. Switching Time vs. R
G
T
J
= 150°C; L = 200μH; V
CE
= 600V, I
CE
= 30A; V
GE
= 15V
16
VGE, Gate-to-Emitter Voltage (V)
Fig. 16
- Typ. Capacitance vs. V
CE
V
GE
= 0V; f = 1MHz
14
12
10
8
6
4
2
0
0
25
50
VCES = 600V
VCES = 400V
75
100
125
150
175
Q G, Total Gate Charge (nC)
Fig. 17
- Typical Gate Charge vs. V
GE
I
CE
= 30A; L = 600μH
5
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August 20, 2014
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