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2SC6076(TE16L1,NV)

Description
TRANS NPN 80V 3A PW MOLD
CategoryDiscrete semiconductor    The transistor   
File Size198KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

2SC6076(TE16L1,NV) Overview

TRANS NPN 80V 3A PW MOLD

2SC6076(TE16L1,NV) Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
MakerToshiba Semiconductor
package instruction,
Reach Compliance Codeunknown
Base Number Matches1
2SC6076
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process)
2SC6076
Power Amplifier Applications
Power Switching Applications
Unit: mm
Low collector saturation voltage: V
CE (sat)
= 0.5 V (max) ( I
C
= 1A)
High-speed switching: t
stg
= 0.4
μs
(typ.)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Tc = 25℃
DC
Pulse
Symbol
V
CBO
V
CEX
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
j
T
stg
Rating
160
160
80
9
3
5
1.5
10
150
−55
to 150
Unit
V
V
V
V
A
A
A
W
°C
°C
1 : BASE
2 : COLLECTOR(HEAT SINK)
3 : EMITTER
JEDEC
JEITA
TOSHIBA
Weight:0.36g (typ.)
2-7J1A
Note1: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Start of commercial production
2005-12
1
2013-11-01

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